VSMB1940X01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm,
GaAlAs Double Hetero
FEATURES
•
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•
•
•
•
•
•
•
•
•
•
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•
Package type: surface mount
Package form: 0805
Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
AEC-Q101 qualified
Peak wavelength:
λ
p
= 940 nm
High reliability
High radiant power
High radiant intensity
High speed
Angle of half sensitivity:
ϕ
= ± 60°
Low forward voltage
Suitable for high pulse current operation
0805 standard surface-mountable package
Floor life: 168 h, MSL 3, according to J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
21531
DESCRIPTION
VSMB1940X01 is an infrared, 940 nm emitting diode in
GaAlAs Double Hetero technology with high radiant power
and high speed, molded in clear, untinted 0805 plastic
package for surface mounting (SMD).
APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
PRODUCT SUMMARY
COMPONENT
VSMB1940X01
Note
• Test conditions see table “Basic Characteristics“
I
e
(mW/sr)
6
ϕ
(deg)
± 60
λ
p
(nm)
940
t
r
(ns)
15
ORDERING INFORMATION
ORDERING CODE
VSMB1940X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
0805
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / ambient
Rev. 1.5, 30-Jun-16
According to Fig. 9, J-STD-020
JESD 51
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
160
100
-40 to +85
-40 to +100
260
270
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81933
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB1940X01
www.vishay.com
Vishay Semiconductors
180
120
100
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90 100
21533
I
F
- Forward Current (mA)
80
60
R
thJA
= 270 K/W
40
20
0
R
thJA
= 270 K/W
0
20
40
60
80
100
21532
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
I
F
= 30 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz,
E = 0 mW/cm
2
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 mA
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
TK
VF
I
R
C
J
I
e
I
e
φe
TKφ
e
TKφ
e
ϕ
λ
p
Δλ
TK
λp
t
r
t
f
d
MIN.
1.15
-
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
TYP.
1.35
2.2
-1.5
-1.1
-
70
6
60
40
-1.1
-0.51
± 60
940
25
0.25
15
15
0.5
MAX.
1.6
-
-
-
10
-
12
-
-
-
-
-
-
-
-
-
-
-
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
%/K
deg
nm
nm
nm
ns
ns
mm
Rev. 1.5, 30-Jun-16
Document Number: 81933
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB1940X01
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
1000
180
I
e rel
- Relative Radiant Intensity (%)
I
F
= 1 mA
160
140
120
I
F
= 100 mA
100
80
60
t
p
= 20 ms
40
- 60 - 40 - 20
0
20
40
60
80
100
I
F
- Forward Current (mA)
100
10
t
p
= 100 µs
t
p
/T= 0.001
1
0
1
2
3
21534
V
F
- Forward Voltage (V)
21444
T
amb
- Ambient Temperature (°C)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
V
F, rel
- Relative Forward Voltage (%)
110
108
106
104
102
100
98
96
94
92
90
- 40
- 20
0
20
40
60
80
100
I
F
= 1 mA
t
p
= 20 ms
I
F
= 100 mA
I
F
= 10 mA
100
Φ
e rel
- Relative Radiant Power (%)
90
80
70
60
50
40
30
20
10
0
840
880
920
960
1000
1040
I
F
= 30 mA
21443
T
amb
- Ambient Temperature (°C)
21445
λ
- Wavelength (nm)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
100
0°
10°
20°
30°
I
e, rel
- Relative Radiant Intensity
I
e
- Radiant Intensity (mW/sr)
10
t
p
= 1 µs
1
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.1
0.01
1
20921
10
100
1000
I
F
- Forward Pulse Current (mA)
948013-1
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.5, 30-Jun-16
Document Number: 81933
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMB1940X01
www.vishay.com
REFLOW SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Vishay Semiconductors
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
200
max. 30 s
150
max. 120 s
100
max. ramp down 6 °C/s
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s
max. 100 s
DRYING
Time (s)
19841
Fig. 9 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS
in millimeters
20018
Rev. 1.5, 30-Jun-16
Document Number: 81933
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB1940X01
www.vishay.com
BLISTER TAPE DIMENSIONS
in millimeters
Vishay Semiconductors
21501
Rev. 1.5, 30-Jun-16
Document Number: 81933
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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