PD 1.025D
Series PVD33
BOSFET
®
Photovoltaic Relay
General Description
The Photovoltaic DC Relay (PVD) is a single-pole, nor-
mally open solid state replacement for electro-me-
chanical relays used for general purpose switching of
analog signals. It utilizes as an output switch a unique
bidirectional (AC or DC) MOSFET power IC termed a
BOSFET. The BOSFET is controlled by a photovoltaic
generator of novel construction, which is energized by
radiation from a dielectrically isolated light emitting di-
ode (LED).
The PVD overcomes the limitations of both conven-
tional and reed electromechanical relays by offering
the solid state advantages of long life, high operating
speed, low pick-up power, bounce-free operation, low
thermal voltages and miniaturization. These advan-
tages allow product improvement and design innova-
tions in many applications such as process control,
multiplexing, telecommunications, automatic test
equipment and data acquisition.
The PVD can switch analog signals from thermocouple
level to 300 volts peak DC. Signal frequencies into the
RF range are easily controlled and switching rates up
to 6kHz are achievable. The extremely small thermally
generated offset voltages allow increased measure-
ment accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate protec-
tion functions. This section of the BOSFET chip utilizes
both bipolar and MOS technology to form NPN transis-
tors, P-channel MOSFETs, resistors, diodes and ca-
pacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this tech-
nique results in the very fast response of the PVD mi-
croelectronic power IC relay.
This advanced semiconductor technology has created
a radically new control device. Designers can now de-
velop switching systems to new standards of electrical
performance and mechanical compactness.
Microelectronic
Power IC Relay
Single-Pole, 220mA, 0-300V DC
PVD33 Features
BOSFET Power IC
10
10
Operations
100µsec Operating Time
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
s
s
s
s
s
s
s
s
s
Part Identification
Part Number
PVD2352
PVD3354
Operating
Voltage (DC)
200V
300V
Sensitivity
Off-State
Resistance
10
8
Ohms
10
10
Ohms
5 mA
(BOSFET is a trademark of International Rectifier)
Series PVD33 BOSFET
®
Photovoltaic Relay
Electrical Specifications
(-40°C
≤
T
A
≤
+85°C unless otherwise specified)
INPUT CHARACTERISTICS
Minimum Control Current
(see figures 1 and 2)
For 160mA Continuous Load Current
For 200mA Continuous Load Current
For 90mA Continuous Load Current
Maximum Control Current for Off-State Resistance at 25°C
Control Current Range (Caution: current limit input LED. See figure 6)
Maximum Reverse Voltage
PVD2352
2.0
5.0
5.0
10
PVD3354
Units
DC
mA@25°C
mA@40°C
mA@85°C
µA(DC)
mA(DC)
V(DC)
2.0 to 25
7.0
OUTPUT CHARACTERISTICS
Operating Voltage Range
Maxiumum Load Current 40°C (see figures 1and 2)
Response Time @25°C (see figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 100 VDC
Max. T(off) @ 12mA Control, 50 mA Load, 100 VDC
Max. On-state Resistance 25°C
(Pulsed) (fig. 4) 50 mA Load, 5mA Control
Min. Off-state Resistance 25°C (see figure 5)
Max. Thermal Offset Voltage @ 5.0mA Control
Min. Off-State dv/dt
Output Capacitance (see figure 9)
PVD2352
200
220
PVD3354
300
Units
V
(peak)
mA
(DC)
µs
µs
Ω
Ω
µvolts
V/µs
pF @ 50VDC
100
50
6
10
8
@ 160VDC
0.2
1000
20
10
10
@ 240VDC
GENERAL CHARACTERISTICS (PVD2352 and PVD3354)
Dielectric Strength: Input-Output
Insulation Resistance: Input-Output @ 90V
DC
Maximum Capacitance: Input-Output
Max. Pin Soldering Temperature
(1.6mm below seating plane, 10 seconds max.)
Ambient Temperature Range:
Operating
Storage
2500
10
12
@ 25°C - 50% RH
1.0
+260
-40 to +85
-40 to +100
Units
V
RMS
Ω
pF
°C
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