2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462
2N5460
2N5461
2N5462
MMBF5460
MMBF5461
MMBF5462
G
S
G
S
TO-92
D
SOT-23
Mark: 6E / 61U / 61V
D
NOTE: Source & Drain
are interchangeable
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings*
-
TA = 25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Parameter
Value
- 40
40
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5460-5462
350
2.8
125
357
Max
*MMBF5460-5462
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001
Fairchild Semiconductor Corporation
2N5460/5461/5462/MMBF5460/5461/5462, Rev A
2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462
P-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
I
G
= 10
µ
A, V
DS
= 0
V
GS
= 20 V, V
DS
= 0
V
GS
= 20 V, V
DS
= 0, T
A
= 100
°
C
5460
V
DS
= 15 V, I
D
= 1.0
µ
A
5461
5462
5460
V
DS
= 15 V, I
D
= 0.1 mA
5461
V
DS
= 15 V, I
D
= 0.2 mA
5462
V
DS
= 15 V, I
D
= 0.4 mA
40
5.0
1.0
6.0
7.5
9.0
4.0
4.5
6.0
V
nA
µ
A
V
V
V
V
V
V
V
GS
Gate-Source Voltage
0.75
1.0
1.8
0.5
0.8
1.5
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, V
GS
= 0
5460
5461
5462
- 1.0
- 2.0
- 4.0
- 5.0
- 9.0
- 16
mA
mA
mA
SMALL SIGNAL CHARACTERISTICS
g
fs
Forward Transfer Conductance
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
5460
5461
5462
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0,
R
G
= 1.0 megohm, f = 100 Hz,
BW = 1.0 Hz
V
DS
= 15 V, V
GS
= 0, f = 100 Hz,
BW = 1.0 Hz
1000
1500
2000
5.0
1.0
1.0
4000
5000
6000
75
7.0
2.0
2.5
µ
mhos
µ
mhos
µ
mhos
µ
mhos
pF
pF
dB
g
os
C
iss
C
rss
NF
Output Conductance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
e
n
Equivalent Short-Circuit Input
Noise Voltage
60
115
nV/
√
Hz
5
*
Pulse Test: Pulse Width
≤
300 ms, Duty Cycle
≤
2%
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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First Production
No Identification Needed
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2