Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 40 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, V
CE
= 5 Vdc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
NOTE:
Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤2%
f
T
C
ob
4
−
−
−
−
500
MHz
pF
h
FE
40
15
V
BE(on)
V
CE(sat)
−
−
−
−
0.5
1.0
−
−
−
−
100
−
1.4
Vdc
Vdc
I
S/b
6.0
−
−
Adc
V
CEO(sus)
I
CEO
I
EBO
I
CEX
250
−
−
−
−
−
−
−
100
10
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
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2
MJ21294
TYPICAL CHARACTERISTICS
1000
V
CE
= 5 V
hFE , DC CURRENT GAIN
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
T
J
= 25°C
−25°C
V
CE
= 5 V
T
J
= 100°C
100
−25
°C
25°C
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
100°C
10
0.1
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 1. DC Current Gain
V CE(s) , COLLECTOR−EMITTER SATURATION VOLTAGE (V)
V BE(s) , BASE−EMITTER SATURATION VOLTAGE (V)
Figure 2. Base−Emitter Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
I
C
/I
B
= 10
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
T
J
= 25°C
−25°C
0.40
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0.1
−25°C
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
/I
B
= 10
100
T
J
= 25°C
100°C
100°C
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Collector−Emitter Saturation Voltage
100
IC, COLLECTOR CURRENT (AMPS)
10 ms
100 ms
10
DC
1.0
0.1
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200°C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
1000
10
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
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3
MJ21294
PACKAGE DIMENSIONS
TO−204AA (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
U
V
2
2 PL
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
K
M
0.13 (0.005)
L
G
1
T Q
M
Y
M
−Y−
H
B
−Q−
0.13 (0.005)
M
T Y
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor
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