Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 40 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, V
CE
= 5 Vdc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
NOTE:
Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤2%
f
T
C
ob
4
−
−
−
−
500
MHz
pF
h
FE
40
15
V
BE(on)
V
CE(sat)
−
−
−
−
0.5
1.0
−
−
−
−
100
−
1.4
Vdc
Vdc
I
S/b
6.0
−
−
Adc
V
CEO(sus)
I
CEO
I
EBO
I
CEX
250
−
−
−
−
−
−
−
100
10
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
http://onsemi.com
2
MJ21294
TYPICAL CHARACTERISTICS
1000
V
CE
= 5 V
hFE , DC CURRENT GAIN
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
T
J
= 25°C
−25°C
V
CE
= 5 V
T
J
= 100°C
100
−25
°C
25°C
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
100°C
10
0.1
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 1. DC Current Gain
V CE(s) , COLLECTOR−EMITTER SATURATION VOLTAGE (V)
V BE(s) , BASE−EMITTER SATURATION VOLTAGE (V)
Figure 2. Base−Emitter Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
I
C
/I
B
= 10
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
T
J
= 25°C
−25°C
0.40
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0.1
−25°C
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
/I
B
= 10
100
T
J
= 25°C
100°C
100°C
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Collector−Emitter Saturation Voltage
100
IC, COLLECTOR CURRENT (AMPS)
10 ms
100 ms
10
DC
1.0
0.1
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200°C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
1000
10
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
http://onsemi.com
3
MJ21294
PACKAGE DIMENSIONS
TO−204AA (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
U
V
2
2 PL
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
K
M
0.13 (0.005)
L
G
1
T Q
M
Y
M
−Y−
H
B
−Q−
0.13 (0.005)
M
T Y
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support:
800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone:
480−829−7710 or 800−344−3860 Toll Free USA/Canada
Japan:
ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
