Datasheet> 器件分类 > 分立半导体> 二极管> 1N5820AMP

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1N5820AMP: 产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN; 产品类别分立半导体二极管; 文件大小153KB，共2页; 制造商Fagor Electrónica; 标准

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1N5820AMP概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

1N5820AMP规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	DO-27, 2 PIN
Reach Compliance Code	compli
ECCN代码	EAR99
其他特性	FREE WHEELING DIODE, LOW POWER LOSS
应用	EFFICIENCY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	0.85 V
JEDEC-95代码	DO-201AD
JESD-30 代码	O-PALF-W2
JESD-609代码	e3
最大非重复峰值正向电流	80 A
元件数量	1
相数	1
端子数量	2
最高工作温度	125 °C
最低工作温度	-65 °C
最大输出电流	3 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED
参考标准	AEC-Q101
最大重复峰值反向电压	20 V
最大反向电流	500 µA
表面贴装	NO
技术	SCHOTTKY
端子面层	MATTE TIN
端子形式	WIRE
端子位置	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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1N5820 - 1N5822

3 Amp. Schottky Barrier Rectifiers

DO-201AD

(Plastic)

Voltage

20 V to 40 V

Low power loss, high efficiency.

High current capability, low VF.

High reliability.

High surge current capability.

Epitaxial construction.

Guard-ring for transient protection.

For use in low voltage, high frequency

inventor, free wheeling, and polarity

protection application.

Current

3.0 A

Dimensions in mm.

MECHANICAL DATA

Cases: DO-201AD molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Pure tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

Polarity: Color band denotes cathode end

High temperature soldering guaranteed:

260 °C/10 seconds/9.5 mm lead lengths

at 5 Ibs., (2.3 Kg) tension

Weight: 1.10 g.

Maximum Ratings and Electrical Characteristics at 25 ºC

1N5820

1N5821

3.0 A

80 A

200 pF

-65 to +125 °C

1N5822

RRM

RMS

F(AV)

FSM

stg

Maximum Recurrent Peak Reverse Voltage (V)

Maximum RMS Voltage (V)

Maximum DC Blocking Voltage (V)

Maximum Average Forward Rectified Current

9.5 mm Lead Lenght @ T

= 90 °C (See graphic)

8.3 ms.Peak Forward Surge Current

(Jedec Method)

Typical Junction Capacitance

Storage Temperature Range

(Note 2)

Operating Temperature Range

Electrical Characteristics at Tamb = 25 °C

th (j-a)

NOTES:

Maximum Instantaneous Forward Voltage I

= 3.0 A

Maximum Instantaneous Forward Voltage I

= 9.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance

Ta = 25 °C

Ta =125°C

(Note 1)

0.475 V

0.850 V

0.500 V

0.900 V

0.5 mA

10 mA

40 °C/W

0.525 V

0.950 V

1. Mount on Cu-Pad Size 16mnm x 16mm on P.C.B.

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

Dec - 07

1N5820AMP相似产品对比

	1N5820AMP	1N5821AMP	1N5822AMP	1N5820TR	1N5821TR
描述	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN
是否Rohs认证	符合	符合	符合	符合	符合
包装说明	DO-27, 2 PIN	O-PALF-W2	DO-27, 2 PIN	DO-27, 2 PIN	DO-27, 2 PIN
Reach Compliance Code	compli	compli	compli	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.85 V	0.9 V	0.95 V	0.85 V	0.9 V
JEDEC-95代码	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
JESD-609代码	e3	e3	e3	e3	e3
最大非重复峰值正向电流	80 A	80 A	80 A	80 A	80 A
元件数量	1	1	1	1	1
相数	1	1	1	1	1
端子数量	2	2	2	2	2
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	3 A	3 A	3 A	3 A	3 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
参考标准	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101
最大重复峰值反向电压	20 V	30 V	40 V	20 V	30 V
最大反向电流	500 µA	500 µA	500 µA	500 µA	500 µA
表面贴装	NO	NO	NO	NO	NO
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1

1N5820AMP

1N5820AMP概述

1N5820AMP规格参数

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