®
Temperature Sensor with
Integrated EEPROM for Memory
Modules
Features
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TSE2002GB2A1
Data Sheet
Description
The TSE2002GB2A1 digital temperature sensor with accuracy up to
±0.5°C was designed to target applications demanding highest level of
temperature readout. The device also contains 256 Byte EEPROM for
storage of vendor information and system configuration such as SPD for
DIMM modules. The sensor and the EEPROM are fully compliant with
JEDEC JC42.4 Component Specification.
The digital temperature sensor comes with several user-programmable
registers to provide maximum flexibility for temperature-sensing
applications. The registers allow specifying critical, upper, and lower
temperature limits as well as hysteresis settings. Both the limits and
hysteresis values are used for communicating temperature events from
the chip to the system. This communication is done using Event pin,
which has an open-drain configuration. The user has the option of setting
the Event pin polarity as either an active-low or active-high comparator
output for thermostat operation, or as a temperature event interrupt
output for microprocessor-based systems.
The sensor uses an industry standard 2-wire, I2C/SMBus serial
interface, and allows up to eight devices to be controlled on the bus.
The 2Kbit (256 Bytes) serial EEPROM memory in the part is organized
as a single block. Half the bytes in memory locations 00h to 7Fh can be
permanently locked with user defined or vendor defined information. The
protected data could also contain system information such as access
speed, size, and organization. The 128 bytes in addresses from 80h to
FFh can be used for general purpose data storage. These addresses are
not write-protected.
Temperature Sensor + 256 Byte Serial EEPROM
256 Byte Serial EEPROM for SPD
Single Supply: 2.3V to 3.6V
Accurate timeout support
- Meets strict SMBus spec of 25ms (min), 35ms (max)
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Timeout supported for Temp Sensor and EEPROM
Timeout supported in all Modes
– Active mode for Temp sensor and EEPROM
– EEPROM in standby or Temp sensor in shutdown
– EEPROM in standby and Temp sensor in shutdown
Schmitt trigger and noise filtering on bus inputs
2-wire Serial Interface: 10-400 kHz I2C™ /SMBus™
Available Packages: PSON-8: DFN-8, TDFN-8
Temperature Sensor Features
Temperature Converted to Digital Data
Sampling Rate of 100ms (max)
Selectable 0, 1.5°C, 3°C, 6°C Hysteresis
Programmable Resolution from 0.0625°C to 0.5°C
Accuracy:
– ±0.5°C/ ±1.0°C (typ/max)from +75°C to +95°C
Serial EEPROM Features
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Permanent and Reversible Software Write Protect
Software Write Protection for the lower 128 bytes
Byte and page write (up to 16 bytes)
Self-time Write cycle
Automatic address incrementing
Organized as 1 block of 256 bytes (256x8)
Memory Module Temp Sensor Application
Memory
Module
CPU
DRAMs
(for memory
throttling)
Typical Applications
Temperature
sensor and
EEPROM
EVENT#
Chipset
SMBus
DIMM Modules (DDR2, DDR3)
Servers, Laptops, Ultra-portables, PCs, etc.
High end audio / video equipment
Industrial temperature monitors
Hard Disk Drives and Other PC Peripherals
MCH
Memory
Bus
DRAMs
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc.
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2012 Integrated Device Technology, Inc.
July 17, 2012
DSC 7321/6
Maximum Ratings
Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not
implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
Symbol
T
STG
V
IO
V
DDSPD
Parameter
Storage Temperature
Input or output range, SA0
Input or output range, other pins
Supply Voltage
Min.
-65
-0.50
-0.50
-0.5
Max.
150
10
4.3
4.3
Units
C
V
V
V
DC and AC Parameters
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC
and AC Characteristic tables that follow are derived from tests performed under the Measurement Conditions summarized in the relevant tables.
Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. DC
Characteristics
Operating Conditions
Symbol
V
DDSPD
T
A
Parameter
Supply Voltage
Ambient operating temperature
Min.
2.3
-20
Max.
3.6
125
Units
V
C
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AC Measurement Conditions
Symbol
C
L
Parameter
Load capacitance
Input rise and fall times
Input levels
Input and output timing reference levels
Min.
100
Max.
50
Units
pF
ns
V
V
0.2*V
DDSPD
to 0.8*V
DDSPD
0.3*V
DDSPD
to 0.7*V
DDSPD
AC Measurement I/O Waveform
Input Parameters for the TSE2002GB2A1
Symbol
C
IN
C
IN
Z
EIL
Z
EIH
t
SP
Parameter
1,2
Input capacitance (SDA)
Input rise and fall times
Ei (SA0,SA1,SA2) input impedance
Ei (SA0,SA1,SA2) input impedance
Pulse width ignored (input filter on
SCL and SDA)
Test Condition
Min.
Max.
8
6
Units
pF
ns
k
k
V
IN
< 0.3* V
DDSPD
V
IN
> 0.7* V
DDSPD
Single glitch, f < 100 KHz
Single glitch, f> 100 KHz
30
800
100
50
ns
1.T
A
=25°C, f=400 kHz
2.Verified by design and characterization not necessarily tested on all devices
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