US2884
Bipolar Hall Switch – Very Hi Sensitivity
igh
Features and Benefits
Wide operating voltage range from 3.5V to
ge
24V
Very high magnetic sensitivity
y
CMOS technology
Chopper-stabilized amplifier stage
s
Low current consumption
Open drain output
Thin SOT23 3L RoHS Compli
iant package
Application Exam
mples
Automotive, Consu
umer and Industrial
Solid-state switch
Brushless DC motor commutation
otor
Speed detection
Linear position dete
detection
Angular position d
detection
Proximity detection
on
Ordering Code
Product Code
US2884
Temperature Code
L
Package Code
SE
Option Code
AAA-000
Packing Form Code
RE
Legend:
Temperature Code:
Package Code:
Option Code:
Packing Form:
Ordering example:
L for Temperature Range -40° to 150°
C
C
SE for TSOT
xxx-000: Standard version
000:
RE for Reel
US2884LSE-AAA-000-RE
US2884LSE
1 Functional Diagram
2 General Descriptio
ion
The Melexis US2884 is a bipo Hall-effect switch
olar
designed in mixed signal CMO technology.
OS
The device integrates a vol
ltage regulator, Hall
sensor with dynamic offset c
cancellation system,
Schmitt trigger and an open-d
drain output driver, all
in a single package.
Due to its wide operating voltage range and
g
temperature range it is particu
ularly suitable for use
in automotive and BLDC motor applications.
otor
The device is delivered in a Thin Small Outline
Transistor (TSOT) RoHS compliant 3-lead
package.
3901002884
Rev 005
Page 1 of 11
Data Sheet
Mar/12
US2884
Bipolar Hall Switch – Very High Sensitivity
Table of Contents
1 Functional Diagram ........................................................................................................ 1
2 General Description ........................................................................................................ 1
3 Glossary of Terms .......................................................................................................... 3
4 Absolute Maximum Ratings ........................................................................................... 3
5 Pin Definitions and Descriptions ................................................................................... 3
6 General Electrical Specifications .................................................................................. 4
7 Magnetic Specifications ................................................................................................. 4
8 Output Behaviour versus Magnetic Pole ...................................................................... 4
9 Detailed General Description ......................................................................................... 5
10 Unique Features ............................................................................................................ 5
11 Performance Graphs .................................................................................................... 6
11.1 Magnetic parameters vs. T
A
.....................................................................................................................6
11.2 Magnetic parameters vs. V
DD
...................................................................................................................6
11.3 V
DSon
vs. T
A
..............................................................................................................................................6
11.4 V
DSon
vs. V
DD
............................................................................................................................................6
11.5 I
DD
vs. T
A
..................................................................................................................................................6
11.6 I
DD
vs. V
DD
................................................................................................................................................6
11.7 I
OFF
vs. T
A
.................................................................................................................................................7
11.8 I
OFF
vs. V
DD
...............................................................................................................................................7
12 Test Conditions ............................................................................................................. 7
12.1 Supply Current .........................................................................................................................................7
12.2 Output Saturation Voltage .......................................................................................................................7
12.3 Output Leakage Current ..........................................................................................................................7
12.4 Magnetic Thresholds ...............................................................................................................................7
13 Application Information................................................................................................ 8
13.1 Typical Three-Wire Application Circuit ....................................................................................................8
13.2 Two-Wire Circuit ......................................................................................................................................8
13.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit ............................................................8
14 Application Comments ................................................................................................. 8
15 Standard information regarding manufacturability of Melexis products with
different soldering processes........................................................................................... 9
16 ESD Precautions ........................................................................................................... 9
17 SE Package Information (TSOT23-3L)....................................................................... 10
18 Disclaimer.................................................................................................................... 11
3901002884
Rev 005
Page 2 of 11
Data Sheet
Mar/12
US2884
Bipolar Hall Switch – Very High Sensitivity
3 Glossary of Terms
MilliTesla (mT), Gauss
RoHS
TSOT
ESD
BLDC
Units of magnetic flux density:
1mT = 10 Gauss
Restriction of Hazardous Substances
Thin Small Outline Transistor (TSOT package) – also referred with the Melexis
package code “SE”
Electro-Static Discharge
Brush-Less Direct-Current
4 Absolute Maximum Ratings
Parameter
Symbol
Supply Voltage
V
DD
Supply Current
I
DD
Output Voltage
V
OUT
Output Current
I
OUT
Operating Temperature Range
T
A
Storage Temperature Range
T
S
Maximum Junction Temperature
T
J
Table 1: Absolute maximum ratings
Value
28
50
28
50
-40 to 150
-50 to 150
165
Units
V
mA
V
mA
°C
°C
°C
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-
rated conditions for extended periods may affect device reliability.
5 Pin Definitions and Descriptions
Pin
№
Name
Type
1
VDD
Supply
2
OUT
Output
3
GND
Ground
Table 2: Pin definitions and descriptions
Function
Supply Voltage pin
Open Drain Output pin
Ground pin
3901002884
Rev 005
Page 3 of 11
Data Sheet
Mar/12
US2884
Bipolar Hall Switch – Very High Sensitivity
6 General Electrical Specifications
DC Operating Parameters T
A
= 25
o
C, V
DD
= 3.5V to 24V (unless otherwise specified)
Parameter
Symbol
Supply Voltage
V
DD
Supply Current
I
DD
Output Saturation Voltage
V
DSon
Output Leakage Current
I
OFF
Output Rise Time
t
r
Output Fall Time
t
f
Maximum Switching Frequency F
SW
Package Thermal Resistance
R
TH
Table 3: Electrical specifications
Test Conditions
Operating
B < B
RP
I
OUT
= 20mA, B > B
OP
B < B
RP,
V
OUT
= 24V
V
DD
=12V, R
L
= 1k , C
L
= 20pF
V
DD
=12V, R
L
= 1k , C
L
= 20pF
Single layer (1S) Jedec board
Min
3.5
Typ
Max
24
5
0.5
10
Units
V
mA
V
µA
µs
µs
KHz
°C/W
0.01
0.25
0.25
10
301
7 Magnetic Specifications
DC Operating Parameters T
A
= -40
o
C to 150
o
C, V
DD
= 4V to 24V (unless otherwise specified)
Parameter
Symbol
Operating Point
B
OP
Release Point
B
RP
Hysteresis
B
HYST
Table 4: Magnetic specifications
Test Conditions
Min
-2
-6
1
Typ
Max
6
2
6
Units
mT
mT
mT
Note 1: For typical values, please refer to the performance graphs in section 11
8 Output Behaviour versus Magnetic Pole
DC Operating Parameters T
A
= -40
o
C to 150
o
C, V
DD
= 3.5V to 24V (unless otherwise specified)
Parameter
Test Conditions
OUT
South pole
B > B
OP
Low
North pole
B < B
RP
High
Table 5: Output behaviour versus magnetic pole
Note 1: The magnetic pole is applied facing the branded side of the package
South pole
North pole
OUT = low (V
DSon
)
OUT = high
3901002884
Rev 005
Page 4 of 11
Data Sheet
Mar/12
US2884
Bipolar Hall Switch – Very Hi Sensitivity
igh
9 Detailed General Descri
ription
Based on mixed signal CMOS technology, Melexis US2884 is a Hall-effect device with ver high magnetic
ry
sensitivity. It allows using generic magnet weak magnets or larger air gap.
agnets,
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed
with Hall sensors and amplifiers. The CM
CMOS technology makes this advanced technique po
possible and
contributes to smaller chip size and lo
ower current consumption than bipolar technology. The small chip size is
he
also an important factor to minimize th effect of physical stress.
he
This combination results in more stabl magnetic characteristics and enables faster and m
le
more precise design.
The wide operating voltage from 3.5V to 24V, wide operating temperature according to “L” specification and
L”
low current consumption make this de
evice especially suitable for automotive and BLDC m
motor applications.
The output signal is open-drain type. S
Such output allows simple connectivity with TTL or CM
CMOS logic by using
a pull-up resistor tied between a pull-u voltage and the device output.
up
10 Unique Features
The US2884 exhibits bipolar magnetic switching characteristics. Therefore, it operates with both south and
c
th
north poles.
Typically, the device behaves as a latch with s
symmetric
operating and release switching points (B
OP
=|B
RP
|). This means
|B
magnetic fields with equivalent strength and o
opposite direction
drive the output high and low.
Removing the magnetic field (B→0) keeps the output in its
e
previous state. This latching property defines the device as a
magnetic memory.
Latch characteristic
Depending on the magnetic switching points, the device may also behave as a unipolar positive switch (B
OP
ng
ar
and B
RP
strictly positive) or negative switch (B
OP
and B
RP
strictly negative). That is the out
s
utput can be set high
and low by only using one magnetic pole. In such case, removing the magnetic field chang the output level.
p
ges
Unipolar positive switch character
eristic
Unipolar negative switch char
haracteristic
In latch, positive or negative switch behaviour, a magnetic hysteresis B
HYST
keeps B
OP
and B
RP
separated by
be
nd
a minimal value. This hysteresis prevents output oscillation near the switching point.
ents
3901002884
Rev 005
Data Sheet
Mar/12
Page 5 of 11
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