DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D252
BGD712
750 MHz, 18.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 29
2001 Nov 02
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Side view
MSA319
BGD712
PINNING - SOT115J
PIN
1
2, 3
5
7, 8
9
input
common
+V
B
common
output
DESCRIPTION
handbook, halfpage
1
2
3
5
7
8
9
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
CONDITIONS
f = 45 MHz
f = 750 MHz
V
B
= 24 V
MIN.
18.2
19
380
MAX.
18.8
20
410
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
B
V
i
T
stg
T
mb
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
40
20
MIN.
MAX.
30
70
+100
+100
V
dBmV
C
C
UNIT
2001 Nov 02
2
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
CHARACTERISTICS
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
mb
= 35
C;
Z
S
= Z
L
= 75
SYMBOL
G
p
SL
FL
PARAMETER
power gain
slope straight line
flatness straight line
f = 45 MHz
f = 750 MHz
f = 45 to 750 MHz; note 1
f = 45 to 100 MHz
f = 100 to 700 MHz
f = 700 to 750 MHz
S
11
input return losses
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 790 MHz
S
22
output return losses
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 790 MHz
S
21
CTB
phase response
composite triple beat
f = 50 MHz
112 channels flat; V
o
= 44 dBmV;
f
m
= 745.25 MHz
79 channels flat; V
o
= 44 dBmV;
f
m
= 547.25 MHz
79 channels; f
m
= 445.25 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
X
mod
cross modulation
112 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
79 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
79 channels; f
m
= 745.25 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
CONDITIONS
MIN.
18.2
19
0.5
23
23
21
20
20
19
17
23
23
20
20
19
19
17
45
TYP.
18.5
19.5
1
BGD712
MAX.
18.8
20
1.5
0.35
0.5
0.15
+45
62
68
63
63
69
60
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
2001 Nov 02
3
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
SYMBOL
CSO
PARAMETER
composite second
order distortion
CONDITIONS
112 channels flat; V
o
= 44 dBmV;
f
m
= 746.5 MHz
79 channels flat; V
o
= 44 dBmV;
f
m
= 548.5 MHz
79 channels; f
m
= 746.5 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
d
2
V
o
NF
second order distortion
output voltage
noise figure
note 3
d
im
=
60
dB; note 4
f = 50 MHz
f = 550 MHz
f = 750 MHz
I
tot
Notes
1. Slope straight line is defined as gain at 750 MHz
gain at 45 MHz.
2. Tilt = 7.3 dB (55 to 547 MHz).
3. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
4. Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
6
dB;
f
r
= 749.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 738.25 MHz.
5. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
total current
consumption (DC)
note 5
MIN.
64
380
TYP.
395
BGD712
MAX.
63
68
62
74
5.5
5.5
7
410
UNIT
dB
dB
dB
dB
dBmV
dB
dB
dB
mA
2001 Nov 02
4
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD712
handbook, halfpage
−50
MCD842
56
Vo
(dBmV)
(1)
handbook, halfpage
−50
MCD843
56
Vo
(dBmV)
(1)
(2)
(3)
(4)
CTB
(dB)
−60
Xmod
(dB)
−60
52
52
−70
48
−70
48
−80
(2)
(3)
(4)
44
−80
44
−90
0
200
400
600
f (MHz)
40
800
−90
0
200
400
600
f (MHz)
40
800
Z
S
= Z
L
= 75
;
V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
Z
S
= Z
L
= 75
;
V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
handbook, halfpage
−50
MCD844
56
Vo
(dBmV)
(1)
CSO
(dB)
−60
52
(2)
−70
(3)
48
−80
44
(4)
−90
0
200
400
600
f (MHz)
40
800
Z
S
= Z
L
= 75
;
V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
Fig.4
Composite second order distortion as a
function of frequency under tilted
conditions.
5
2001 Nov 02
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