Freescale Semiconductor
Technical Data
Document Number: MMRF1017N
Rev. 0, 7/2014
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 80 W RF power LDMOS transistor is designed for wideband RF power
amplifiers covering the frequency range of 720 to 960 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 1400 mA, P
out
= 80 W Avg., Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
20.0
20.1
20.0
D
(%)
35.9
36.2
36.1
Output PAR
(dB)
6.3
6.2
6.1
ACPR
(dBc)
--38.0
--37.6
--37.5
IRL
(dB)
--14
--18
--17
MMRF1017NR3
720-
-960 MHz, 80 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.
OM-
-780-
-2L
PLASTIC
Gate 2
1 Drain
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2014. All rights reserved.
MMRF1017NR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
--40 to +150
--40 to +225
Unit
Vdc
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 80 W CW, 28 Vdc, I
DQ
= 1500 mA, 960 MHz
Symbol
R
JC
Value
(2,3)
0.31
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 370
Adc)
Gate Quiescent Voltage
(V
DD
= 32 Vdc, I
D
= 1400 mA, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.0
1.7
0.1
1.5
2.2
0.14
2.0
2.7
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
MMRF1017NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 80 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
VSWR 10:1 at 32 Vdc, 416 W CW Output Power
(3 dB Input Overdrive from 280 W CW Rated Power)
G
ps
D
PAR
ACPR
IRL
19.0
33.5
5.6
—
—
20.0
36.1
6.1
--37.5
--17
22.0
—
—
--36.0
--10
dB
%
dB
dBc
dB
Load Mismatch
(In Freescale Test Fixture, 50 ohm system) I
DQ
= 1400 mA, f = 940 MHz
No Device Degradation
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 920--960 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 80 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
1. Part internally matched both on input and output.
P1dB
VBW
res
G
F
G
P1dB
—
—
—
—
—
280
60
0.1
0.0156
0.006
—
—
—
—
—
W
MHz
dB
dB/C
dB/C
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
3
C25
C14
C3
C4
CUT OUT AREA
C2
C8
R1
C10
C11
C12
C13
C15
C17
C20
C16
C24
C26*
C5
C1
C6
C7
C9
R2
C21
C22
C18 C19 C23
*C26 is mounted vertically.
Figure 2. MMRF1017NR3 Test Circuit Component Layout
Table 6. MMRF1017NR3 Test Circuit Component Designations and Values
Part
C1
C2, C5, C10, C13
C3, C7, C14, C15, C22, C23
C4, C6, C16, C17, C18, C19
C8, C9, C11, C24
C12, C20, C21
C25
C26
R1, R2
PCB
Description
62 pF Chip Capacitor
4.7 pF Chip Capacitors
10
F
Chip Capacitors
47 pF Chip Capacitors
3.9 pF Chip Capacitors
2.4 pF Chip Capacitors
470
F,
63 V Electrolytic Capacitor
36 pF Chip Capacitor
6.04
,
1/4 W Chip Resistor
Rogers RO4350B, 0.020,
r
= 3.66
Part Number
ATC100B620JT500XT
ATC600F4R7BT250XT
GRM32ER71H106KA12L
ATC600F470JT250XT
ATC600F3R9BT250XT
ATC600F2R4BT250XT
MCGPR63V477M13X26-RH
ATC100B360JT500XT
CRCW12066R04FKEA
—
Manufacturer
ATC
ATC
Murata
ATC
ATC
ATC
Multicomp
ATC
Vishay
MTL
MMRF1017NR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
D
, DRAIN
EFFICIENCY (%)
23
22
21
G
ps
, POWER GAIN (dB)
20
19
18
17
16
15
14
13
820
840
860
880
900
920
940
960
ACPR
IRL
G
ps
D
38
34
V
DD
= 28 Vdc, P
out
= 80 W (Avg.)
30
I
DQ
= 1400 mA, Single--Carrier W--CDMA
26
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
PARC
22
--37
--38
ACPR (dBc)
--39
--40
--41
--42
980
f, FREQUENCY (MHz)
--0
--5
--10
--15
--20
--25
IRL, INPUT RETURN LOSS (dB)
--1
--1.2
--1.4
--1.6
--1.8
--2
PARC (dB)
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 80 Watts Avg.
--10
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 320 W (PEP), I
DQ
= 1400 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
--20
Frequency of 940 MHz
IM3--U
--30
IM5--U
--40
IM5--L
--50
--60
IM7--U
IM7--L
1
10
TWO--TONE SPACING (MHz)
100
IM3--L
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
22
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
21
G
ps
, POWER GAIN (dB)
20
19
18
17
16
1
0
--1
--2
--3
--4
--5
--1 dB = 67 W
--2 dB = 95 W
PARC
30
--3 dB = 132 W
25
20
70
90
110
130
150
P
out
, OUTPUT POWER (WATTS)
50
D
ACPR
G
ps
35
D
DRAIN EFFICIENCY (%)
45
40
--25
--30
--35
--40
--45
--50
ACPR (dBc)
--20
V
DD
= 28 Vdc, I
DQ
= 1400 mA, f = 940 MHz
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
50
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
