VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 60 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified
JEDEC
®
-JESD 47
according
to
Available
2
3
1
TO-247AC modified
Base
cathode
2
1
TO-247AC
Base
cathode
+
2
2
3
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
1
Cathode
3
Anode
1
Anode -
3
- Anode
VS-60EPF1...
VS-60APF1...
DESCRIPTION
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-247AC modified (2 pins), TO-247AC
60 A
1000 V, 1200 V
1.4 V
830 A
95 ns
150 °C
Single die
0.6
The VS-60EPF1... and VS-60APF1... soft recovery rectifier
series has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, - 100 A/μs
30 A, T
J
= 25 °C
Range
Sinusoidal waveform
CHARACTERISTICS
VALUES
1000 to 1200
60
830
95
1.2
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-60EPF10PbF, VS-60APF10PbF
VS-60EPF10-M3, VS-60APF10-M3
VS-60EPF12PbF, VS-60APF12PbF
VS-60EPF12-M3, VS-60APF12-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
12
1300
I
RRM
AT 150 °C
mA
Revision: 11-Feb-16
Document Number: 93721
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 103 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
60
700
830
2450
3460
34 600
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
60 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.4
4.6
0.9
0.1
12
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 60 A
pk
25 A/μs
25 °C
VALUES
480
8
2.7
0.6
UNITS
ns
A
μC
dir
dt
Q
rr
I
RM(REC)
I
FM
t
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC modified
Marking device
Case style TO-247AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.4
40
0.2
6
0.21
6 (5)
12 (10)
60EPF10
60EPF12
60APF10
60APF12
g
oz.
kgf · cm
(Ibf · in)
°C/W
UNITS
°C
Mounting torque
Revision: 11-Feb-16
Document Number: 93721
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series
www.vishay.com
150
140
Vishay Semiconductors
Maximum Average Forward
Power Loss (W)
DC
180°
120°
90°
60°
30°
Maximum Allowable Case
Temperature (°C)
140
130
60.PF.. Series
R
thJC
(DC) = 0.4 °C/W
120
100
80
60
40
20
0
Ø
Conduction angle
120
110
100
30°
90
0
10
20
30
40
50
60
70
60°
90°
120°
180°
RMS limit
Ø
Conduction period
60.PF.. Series
T
J
= 150 °C
0
20
40
60
80
100
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
800
60.PF.. Series
R
thJC
(DC) = 0.4 °C/W
At any rated load condition and with
rated V
RRM
applied following surge.
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
Ø
Peak Half Sine Wave
Forward Current (A)
700
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction period
600
500
30°
DC
60°
90°
120°
180°
400
60.PF.. Series
300
0
20
40
60
80
100
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
100
Maximum Average Forward
Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
900
800
700
600
500
400
300
0.01
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Ø
Conduction angle
60.PF.. Series
T
J
= 150 °C
10
20
30
40
50
60
70
60.PF.. Series
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 93721
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series
www.vishay.com
1000
60.PF.. Series
Vishay Semiconductors
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
600
500
60.PF.. Series
T
J
= 25 °C
I
FM
= 60 A
I
FM
= 30 A
I
FM
= 10 A
I
FM
= 5 A
100
0
0
40
80
120
160
200
I
FM
= 1 A
12 000
10 000
8000
6000
4000
2000
I
FM
= 1 A
0
0
40
80
120
160
200
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 30 A
60.PF.. Series
T
J
= 25 °C
I
FM
= 60 A
400
300
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (ns)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
1200
1000
60.PF.. Series
T
J
= 150 °C
25 000
60.PF.. Series
T
J
= 150 °C
I
FM
= 60 A
800
I
FM
= 60 A
600
I
FM
= 30 A
400
200
0
0
40
80
120
160
200
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 5 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (ns)
20 000
15 000
I
FM
= 30 A
10 000
I
FM
= 10 A
5000
I
FM
= 5 A
I
FM
= 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 11-Feb-16
Document Number: 93721
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series
www.vishay.com
45
40
60.PF.. Series
T
J
= 25 °C
I
FM
= 60 A
50
60
60.PF.. Series
T
J
= 150 °C
I
FM
= 60 A
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
35
30
25
20
15
10
5
0
0
40
80
120
160
200
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 30 A
I
rr
- Typical Reverse
Recovery Current (A)
I
FM
= 30 A
40
I
FM
= 10 A
30
20
10
0
0
40
80
120
160
200
I
FM
= 5 A
I
FM
= 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
0.01
Single pulse
60.PF.. Series
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 93721
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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