STPS6M100DEE
High voltage power Schottky rectifier
Datasheet
production data
Features
■
■
■
■
■
NC
Negligible switching losses
Extremely fast switching
Low thermal resistance
High junction temperature capability
ECOPACK
®
2 compliant component
A
NC
A
A
A
K
A
A
A
A
NC
A
Description
This Schottky rectifier is designed for switch mode
power supply and high frequency DC to DC
converters.
Packaged in PowerFLAT™, this device is
intended for use in low voltage, high frequency,
inverters, free-wheeling, by-pass diode and
polarity protection applications.Its low profile was
especially designed to be used in applications
with space-saving constraints.
K
K
PowerFLAT (3.3 x 3.3)
STPS6M100DEE-TR
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
Value
6A
100 V
150 °C
0.64 V
TM: PowerFLAT is a trademark of STMicroelectronics
September 2012
This is information on a product in full production.
Doc ID 023259 Rev 1
1/8
www.st.com
8
Characteristics
STPS6M100DEE
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
(1)
T
stg
T
j
Absolute ratings (limiting values T
amb
= 25 °C unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
Tc = 130 °C
=
0.5
Value
100
15
6
100
480
-65 to +150
150
Unit
V
A
A
A
W
°C
°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
t
p
= 10 µs T
j
=
125 °C
1. For pulse time duration deratings, please refer to
Figure 3.
More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
Table 3.
Symbol
R
th(j-c)
Thermal resistance
Parameter
Junction to case
Value
4
Unit
°C/W
Table 4.
Symbol
I
R(1)
V
F(2)
Static electrical characteristics
Parameter
Reverse leakage current
Forward voltage drop
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
I
F
= 6A
Min.
-
-
-
5
0.58
Typ.
Max.
30
15
0.78
0.64
Unit
µA
mA
V
1. Pulse test: t
p
= 5 ms,
< 2%
2. Pulse test: t
p
= 380 µs,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.56 x I
F(AV)
+ 0.0133 x I
F
2
(RMS)
2/8
Doc ID 023259 Rev 1
STPS6M100DEE
Characteristics
Figure 1.
PF(AV)(W)
Average forward power dissipation Figure 2.
versus average forward current
I
F(AV)
(A)
Average forward current versus
ambient temperature( = 0.5)
Rth(j-a)=Rth(j-c)
6
δ
= 0.05
5
δ
= 0.1
7
δ
= 0.2
δ
= 0.5
6
5
4
δ
=1
4
3
3
2
T
2
1
T
1
IF(AV)(A)
0
0
1
2
3
4
5
δ
=tp/T
6
7
tp
0
8
δ
=tp/T
0
25
tp
50
T
amb
(°C)
75
100
125
150
Figure 3.
Normalized avalanche power
derating versus pulse duration
P
ARM
(t p )
P
ARM
(10 µs)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
1
0.1
0.7
0.6
0.5
0.01
0.4
0.3
0.2
t
p
(µs)
0.001
1
10
100
1000
0.1
Single pulse
tp(s)
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Figure 5.
Reverse leakage current versus
reverse voltage applied (typical
values)
Figure 6.
Junction capacitance versus
reverse voltage applied (typical
values)
F=1 MHz
V
OSC
=30 mV
RMS
Tj =25 °C
I
R
(mA)
1.E+02
Tj = 150 °C
C(pF)
1000
1.E+01
Tj = 125 °C
1.E+00
Tj = 100 °C
Tj = 75 °C
1.E-01
100
1.E-02
Tj = 50 °C
Tj = 25 °C
1.E-03
VR(V)
V
R
(V)
1.E-04
0
10
20
30
40
50
60
70
80
90
100
10
1
10
100
Doc ID 023259 Rev 1
3/8
Characteristics
STPS6M100DEE
Figure 7.
Forward voltage drop versus
forward current
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under tab
100.0
IFM(A)
250
T
j
=125 °C
(Maximum values)
Rth(j-a)(°C/W)
epoxy printed board FR4, copper thickness=35µm
PowerFLAT (3.3x3.3)
200
10.0
T
j
=125 °C
(Typical values)
T
j
=25 °C
(Maximum values)
150
100
1.0
50
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
1
2
3
4
5
6
7
8
SCu(cm²)
9
10
4/8
Doc ID 023259 Rev 1
STPS6M100DEE
Package information
2
Package information
●
●
Epoxy meets UL94,V0
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 9.
PowerFLAT-3.3x3.3-8L dimensions (definitions)
Exposed pad
L1
E2
L
A3
E
E/2
b
nc
nc
D2
D/2
D
e/2
D3
e
a
k
k
a
L2
A
Index area
(D/2 x E/2)
A4
Projection
Table 5.
PowerFLAT-8L dimensions (values)
Dimensions
Ref.
Min.
A
A3
A4
b
D
D2
D3
e
E
E2
L
L1
L2
3.20
1.68
0.31
0.55
0.86
0.30
3.20
2.24
1.60
0.95
Millimeters
Typ.
1.00
0.20
0.20
0.37
3.30
2.31
1.67
0.65
3.30
1.75
0.38
0.62
0.93
3.40
1.82
0.45
0.69
1.00
0.126
0.066
0.012
0.22
0.034
0.44
3.40
2.38
1.74
0.012
0.126
0.088
0.063
Max.
1.05
Min.
0.037
Inches
Typ.
0.039
0.0079
0.0079
0.015
0.130
0.091
0.066
0.026
0.130
0.069
0.015
0.024
0.037
0.134
0.072
0.018
0.027
0.039
0.017
0.134
0.094
0.069
Max.
0.041
Doc ID 023259 Rev 1
5/8
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