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IS42S16800B-7TL

产品描述DRAM 128M 8Mx16 143Mhz
产品类别存储   
文件大小805KB,共60页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
标准
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IS42S16800B-7TL概述

DRAM 128M 8Mx16 143Mhz

IS42S16800B-7TL规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
DRAM
Shipping RestrictionsThis product may require additional documentation to export from the United States.
RoHSDetails
类型
Type
SDRAM
Data Bus Width16 bit
Organization8 M x 16
封装 / 箱体
Package / Case
TSOP-54
Memory Size128 Mbit
Maximum Clock Frequency143 MHz
Access Time7 ns
电源电压-最大
Supply Voltage - Max
3.6 V
电源电压-最小
Supply Voltage - Min
3 V
Supply Current - Max130 mA
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 70 C
高度
Height
1 mm
长度
Length
22.22 mm
宽度
Width
10.16 mm
安装风格
Mounting Style
SMD/SMT
Moisture SensitiveYes
工作电源电压
Operating Supply Voltage
3.3 V
工厂包装数量
Factory Pack Quantity
108

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IS42S81600B
IS42S16800B
16Meg x 8, 8Meg x16
128-MBIT SYNCHRONOUS DRAM
JUNE 2009
FEATURES
• Clock frequency: 167, 143, 133 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
IS42S81600B
IS42S16800B
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Industrial Temperature Availability
• Lead-free Availability
V
dd
V
ddq
3.3V 3.3V
3.3V 3.3V
OVERVIEW
ISSI
's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 128Mb SDRAM is organized as follows.
IS42S81600B
4M x8x4 Banks
54-pin TSOPII
IS42S16800B
2M x16x4 Banks
54-pin TSOPII
KEY TIMING PARAMETERS
Parameter
Clk Cycle Time
CAS Latency = 3
CAS Latency = 2
Clk Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from Clock
CAS Latency = 3
CAS Latency = 2
-6
6
167
5.4
-7
7
10
143
100
5.4
6
-75E
7.5
133
6
ns
ns
Mhz
Mhz
ns
ns
Unit
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. G
06/11/09
1

IS42S16800B-7TL相似产品对比

IS42S16800B-7TL IS42S16800B-7T IS42S16800B-7TLI-TR IS42S16800B-7TI IS42S16800B-7TI-TR IS42S81600B-7TI-TR IS42S16800B-7TL-TR
描述 DRAM 128M 8Mx16 143Mhz DRAM 128M 8Mx16 143Mhz DRAM 128M 8Mx16 143Mhz DRAM 128M 8Mx16 143Mhz DRAM 128M 8Mx16 143Mhz DRAM 128M 16Mx8 143Mhz DRAM 128M 8Mx16 143Mhz
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体)
产品种类
Product Category
DRAM DRAM DRAM DRAM DRAM DRAM DRAM
Shipping Restrictions This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States. This product may require additional documentation to export from the United States.
RoHS Details N Details N N N Details
类型
Type
SDRAM SDRAM SDRAM SDRAM SDRAM SDRAM SDRAM
Data Bus Width 16 bit 16 bit 16 bit 16 bit 16 bit 8 bit 16 bit
Organization 8 M x 16 8 M x 16 8 M x 16 8 M x 16 8 M x 16 16 M x 8 8 M x 16
封装 / 箱体
Package / Case
TSOP-54 TSOP-54 TSOP-54 TSOP-54 TSOP-54 TSOP-54 TSOP-54
Memory Size 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit
Maximum Clock Frequency 143 MHz 143 MHz 143 MHz 143 MHz 143 MHz 143 MHz 143 MHz
Access Time 7 ns 7 ns 7 ns 7 ns 7 ns 7 ns 7 ns
电源电压-最大
Supply Voltage - Max
3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
电源电压-最小
Supply Voltage - Min
3 V 3 V 3 V 3 V 3 V 3 V 3 V
Supply Current - Max 130 mA 130 mA 130 mA 130 mA 130 mA 130 mA 130 mA
最小工作温度
Minimum Operating Temperature
0 C 0 C - 40 C - 40 C - 40 C - 40 C 0 C
最大工作温度
Maximum Operating Temperature
+ 70 C + 70 C + 85 C + 85 C + 85 C + 85 C + 70 C
高度
Height
1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
长度
Length
22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm
宽度
Width
10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Moisture Sensitive Yes Yes Yes Yes Yes Yes Yes
工作电源电压
Operating Supply Voltage
3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
工厂包装数量
Factory Pack Quantity
108 108 1500 108 1500 1500 1500
系列
Packaging
- - Reel - Reel Reel Reel

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