STTH30R06
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
Description
This device uses ST Turbo 2 600 V technology,
and is particularly suited as boost diode in
discontinuous or critical mode power factor
corrections.
It is also intended for use as a freewheeling diode
in power supplies and other power switching
applications.
Table 1: Device summary
Symbol
I
F(AV)
V
RRM
Value
30 A
600 V
175 °C
1.10 V
50 ns
Features
Ultrafast switching
Low reverse current
Low thermal resistance
Reduce switching and conduction losses
T
j
V
F
(typ.)
t
rr
(max.)
June 2017
DocID10938 Rev 3
1/11
www.st.com
This is information on a product in full production.
Characteristics
STTH30R06
1
Characteristics
Table 2: Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ = 0.5, square wave
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Table 3: Thermal parameters
Symbol
R
th(j-c)
Junction to case
Parameter
DO-247
DOP-3I
Table 4: Static electrical characteristics
Symbol
I
R
(1)
V
F
(2)
Notes:
(1)
Pulse
(2)
Pulse
Value
600
50
DO-247
DOP-3I
T
C
= 115 °C
T
C
= 85 °C
30
300
-65 to +175
175
Unit
V
A
A
A
°C
°C
t
p
= 10 ms sinusoidal
Max. value
1.1
1.7
Unit
°C/W
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
Min.
-
-
-
-
Typ.
Max.
25
Unit
µA
80
800
1.85
Forward voltage drop
I
F
= 30 A
1.10
1.40
V
test: t
p
= 5 ms, δ < 2%
test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.07 x I
F(AV)
+ 0.011 x I
F2(RMS)
2/11
DocID10938 Rev 3
STTH30R06
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
I
F
= 0.5 A
I
R
= 1 A
I
rr
= 0.25 A
I
F
= 1 A
V
R
= 30 V
dl
F
/dt = 50 A/µs
I
F
= 30 A
V
R
= 400 V
dl
F
/dt = 100 A/µs
I
F
= 30 A
V
FR
= 1.1 x V
Fmax.
dl
F
/dt = 100 A/µs
Min.
-
Characteristics
Typ.
Max.
50
ns
-
50
70
Unit
t
rr
Reverse recovery time
T
j
= 25 °C
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
T
j
= 125 °C
-
-
-
8
11
500
A
ns
V
T
j
= 25 °C
2.5
DocID10938 Rev 3
3/11
Characteristics
STTH30R06
1.1
Characteristics (curves)
Figure 1: Conduction losses versus average
forward current
P
F( AV )
(W)
55
50
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
Figure 2: Forward voltage drop versus forward
current
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
δ=1
T
I
F( AV )
(
A)
δ
=tp/T
tp
Figure 3: Relative variation of thermal impedance
junction to case versus pulse duration
Z
th (j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E -03
1.E -02
1.E -01
1.E +00
5
15
25
30
Figure 4: Peak reverse recovery current versus
dl
F
/dt (typical values)
I
RM
(A)
V
R
= 400 V
T
j
= 125°C
I
F
=I
F(AV )
I
F
=0.5 x I
F(AV )
I
F
=2 x I
F(AV )
20
I
F
=0.25 x I
F(AV )
10
t
P
(s)
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
Figure 5: Reverse recovery time versus dl
F
/dt
(typical values)
t
rr
(ns)
20 0
V
R
= 400 V
T
j
= 125°C
15 0
I
F
=2 x I
F(AV )
Figure 6: Reverse recovery charges versus dl
F
/dt
(typical values)
Q
rr
(µC)
3.0
V
R
= 400 V
T
j
= 125°C
I
F
=2 x I
F(AV )
2.5
2.0
I
F
=I
F(AV )
I
F
=0.5 x I
F(AV )
I
F
=I
F(AV )
10 0
1.5
I
F
=0.5 x I
F(AV )
1.0
50
0.5
dI
F
/dt(A/µs)
0
0
2 00
40 0
60 0
800
10 00
dI
F
/dt(A/µs)
0.0
0
200
400
600
800
1000
4/11
DocID10938 Rev 3
STTH30R06
Figure 7: Softness factor versus dl
F
/dt
(typical values)
Sfactor
0.6
Characteristics
Figure 8: Relative variation of dynamic parameters
versus junction temperature
2.50
I
F
≤ 2 x I
F
(AV)
V
R
= 400 V
T
j
= 125°C
2.25
2.00
1.75
S
FATOR
0.5
I
F
≤ 2 x I
F
(AV)
V = 400 V
R
Reference: T
j
= 125 °C
0.4
1.50
1.25
1.00
0.3
0.2
0.75
I
RM
0.1
0.50
dI
F
/dt(A/µs)
0
50
100
150
200
250
300
350
400
450
5 00
0.25
0.00
Q
RR
0.0
T
j
(°C)
75
100
125
25
50
Figure 9: Transient peak forward voltage versus
dl
F
/dt (typical values, per diode)
V
FP
(V)
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
F
= I
F
(AV)
T
j
= 125°C
Figure 10: Forward recovery time versus dl
F
/dt
(typical values)
t
FR
(ns)
800
700
600
500
400
300
I
F
≤ 2 x I
F
(AV)
V
R
= 1.1 x V max.
F
T
j
= 125°C
200
100
0.0
0
10 0
20 0
dI
F
/dt(A/µs)
0
300
400
500
0
10 0
200
dI
F
/dt(A/µs)
300
400
50 0
Figure 11: Junction capacitance versus reverse
voltage applied (typical values)
1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
100
V
R
(V)
10
1
10
100
1000
DocID10938 Rev 3
5/11