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IRS2607DSTRPBF

产品描述Gate Drivers Half Bridge Drvr Hi Volt & Hi Speed
产品类别模拟混合信号IC    驱动程序和接口   
文件大小1MB,共28页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
标准
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IRS2607DSTRPBF概述

Gate Drivers Half Bridge Drvr Hi Volt & Hi Speed

IRS2607DSTRPBF规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Infineon(英飞凌)
包装说明SOP, SOP8,.25
Reach Compliance Codecompliant
ECCN代码EAR99
高边驱动器YES
接口集成电路类型FULL BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
湿度敏感等级2
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
标称输出峰值电流0.2 A
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源15 V
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压20 V
最小供电电压10 V
标称供电电压15 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
断开时间0.7 µs
接通时间0.715 µs
宽度3.9 mm

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Not recommended for new designs. For new designs, we recommend 2EDL05N06PF
IRS2607DSPbF_Rev23
Data Sheet No. PD 60273
IRS2607DSPbF
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Matched propagation delay for both channels
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs
Integrated bootstrap diode
Suitable for both trapezoidal and sinusoidal motor control
RoHS compliant
Packages
8-Lead SOIC
Applications:
*Motor Control
*Air Conditioners/ Washing Machines
*General Purpose Inverters
*Micro/Mini Inverter Drives
Description
The IRS2607D is a high voltage, high speed power MOSFET and IGBT drivers with independent high and low side
referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output
drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. The floating channel
can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
Typical Connection
www.irf.com
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