MOSFET 40V 6Ohm
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Microchip(微芯科技) |
产品种类 Product Category | MOSFET |
RoHS | N |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-92-3 |
Number of Channels | 1 Channel |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 40 V |
Id - Continuous Drain Current | - 250 mA |
Rds On - Drain-Source Resistance | 6 Ohms |
Vgs - Gate-Source Voltage | 20 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 740 mW |
Channel Mode | Enhancement |
高度 Height | 5.33 mm |
长度 Length | 5.21 mm |
产品 Product | MOSFET Small Signal |
Transistor Type | 1 P-Channel |
类型 Type | FET |
宽度 Width | 4.19 mm |
Fall Time | 4 ns |
Rise Time | 4 ns |
工厂包装数量 Factory Pack Quantity | 2000 |
Typical Turn-Off Delay Time | 5 ns |
Typical Turn-On Delay Time | 4 ns |
单位重量 Unit Weight | 0.007760 oz |
TP2104N3-P014 | TP2104N3-P013 | TP2104N3 | TP2104N3-P002 | |
---|---|---|---|---|
描述 | MOSFET 40V 6Ohm | MOSFET 40V 6Ohm | MOSFET 40V 6Ohm | MOSFET 40V 6Ohm |
Product Attribute | Attribute Value | Attribute Value | Attribute Value | Attribute Value |
制造商 Manufacturer |
Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) |
产品种类 Product Category |
MOSFET | MOSFET | MOSFET | MOSFET |
RoHS | N | N | N | N |
技术 Technology |
Si | Si | Si | Si |
安装风格 Mounting Style |
Through Hole | Through Hole | Through Hole | Through Hole |
封装 / 箱体 Package / Case |
TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 40 V | - 40 V | - 40 V | - 40 V |
Id - Continuous Drain Current | - 250 mA | - 250 mA | - 250 mA | - 250 mA |
Rds On - Drain-Source Resistance | 6 Ohms | 6 Ohms | 6 Ohms | 6 Ohms |
Vgs - Gate-Source Voltage | 20 V | 20 V | 20 V | 20 V |
最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C | - 55 C | - 55 C |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C | + 150 C | + 150 C |
Configuration | Single | Single | Single | Single |
Pd-功率耗散 Pd - Power Dissipation |
740 mW | 740 mW | 740 mW | 740 mW |
Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
高度 Height |
5.33 mm | 5.33 mm | 5.33 mm | 5.33 mm |
长度 Length |
5.21 mm | 5.21 mm | 5.21 mm | 5.21 mm |
产品 Product |
MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel |
类型 Type |
FET | FET | FET | FET |
宽度 Width |
4.19 mm | 4.19 mm | 4.19 mm | 4.19 mm |
Fall Time | 4 ns | 4 ns | 4 ns | 4 ns |
Rise Time | 4 ns | 4 ns | 4 ns | 4 ns |
工厂包装数量 Factory Pack Quantity |
2000 | 2000 | 1000 | 2000 |
Typical Turn-Off Delay Time | 5 ns | 5 ns | 5 ns | 5 ns |
Typical Turn-On Delay Time | 4 ns | 4 ns | 4 ns | 4 ns |
单位重量 Unit Weight |
0.007760 oz | 0.007760 oz | 0.007760 oz | 0.007760 oz |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved