Freescale Semiconductor
Technical Data
Document Number: MRF8S18210WHS
Rev. 0, 4/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz
to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 30 Volts, I
DQ
=
1300 mA, P
out
= 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
1930 MHz
1960 MHz
1995 MHz
G
ps
(dB)
17.8
17.8
18.1
η
D
(%)
29.2
28.2
27.6
Output PAR
(dB)
7.0
7.0
7.1
ACPR
(dBc)
--34.2
--34.4
--34.3
MRF8S18210WHSR3
MRF8S18210WGHSR3
1805 MHz - 1995 MHz
-
50 W AVG., 30 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
210 Watts CW
1800 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 30 Volts, I
DQ
=
1300 mA, P
out
= 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
18.2
18.1
18.2
η
D
(%)
30.1
29.1
27.8
Output PAR
(dB)
7.3
7.4
7.4
ACPR
(dBc)
--35.1
--35.4
--35.9
NI-
-880XS-
-2
MRF8S18210WHSR3
NI-
-880XS- GULL
-2
MRF8S18210WGHSR3
Features
•
Designed for Wide Instantaneous Bandwidth Applications
•
Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25°C
Derate above 25°C
RF
in
/V
GS
2
1 RF
out
/V
DS
(Top View)
Figure 1. Pin Connections
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
239
1.44
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
MRF8S18210WHSR3 MRF8S18210WGHSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 50 W CW, 30 Vdc, I
DQ
= 1300 mA, 1840 MHz
Case Temperature 101°C, 210 W CW
(3)
, 30 Vdc, I
DQ
= 1300 mA, 1840 MHz
Symbol
R
θJC
Value
(1,2)
0.48
0.44
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
IV
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 306
μAdc)
Gate Quiescent Voltage
(V
DD
= 30 Vdc, I
D
= 1300 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.06 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2.0
0.1
1.9
2.7
0.24
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
5
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(4,5)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 1300 mA, P
out
= 50 W Avg., f = 1930 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
17.0
26.0
6.7
—
—
17.8
29.2
7.0
--34.2
--9
20.0
—
—
--30.0
--7
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 1300 mA, P
out
= 50 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
1930 MHz
1960 MHz
1995 MHz
G
ps
(dB)
17.8
17.8
18.1
η
D
(%)
29.2
28.2
27.6
Output PAR
(dB)
7.0
7.0
7.1
ACPR
(dBc)
--34.2
--34.4
--34.3
IRL
(dB)
--9
--9
--13
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Part internally matched both on input and output.
5. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRF8S18210WHSR3 MRF8S18210WGHSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 80 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 65 MHz Bandwidth @ P
out
= 50 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(1)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
210
12
Max
—
—
Unit
W
MHz
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 1300 mA, 1930 MHz -- 1995 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
100
0.14
0.02
0.008
—
—
—
—
MHz
dB
dB/°C
dB/°C
Typical Broadband Performance — 1800 MHz
(In Freescale 1800 MHz Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 1300 mA, P
out
=
50 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
18.2
18.1
18.2
η
D
(%)
30.1
29.1
27.8
Output PAR
(dB)
7.3
7.4
7.4
ACPR
(dBc)
--35.1
--35.4
--35.9
IRL
(dB)
--10
--9
--10
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C22
C3
C5
C7
C11*
R1
C15*
C1
C9
C13*
C20*
CUT OUT AREA
C18*
C19*
C21*
C16
C17
R2
C2
C10
C12*
C14*
C6
C4
C8
MRF8S18210HS/B
Rev. 0
*C11, C12, C13, C14, C15, C18, C19, C20, and C21 are mounted vertically.
Figure 2. MRF8S18210WHSR3(WGHSR3) Test Circuit Component Layout
Table 5. MRF8S18210WHSR3(WGHSR3) Test Circuit Component Designations and Values
Part
C1, C2
C3, C4, C5, C6, C7, C8
C9, C10, C11, C12, C13, C14
C15
C16, C21
C17
C18, C19
C20
C22
R1, R2
PCB
Description
2.2
μF
Chip Capacitors
10
μF
Chip Capacitors
8.2 pF Chip Capacitors
1.3 pF Chip Capacitor
1.8 pF Chip Capacitors
2.0 pF Chip Capacitor
3.9 pF Chip Capacitors
1.0 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
10
Ω,
1/4 W Chip Resistors
0.020″,
ε
r
= 3.5
Part Number
C3225X7R2A225M
C5750X7S2A106MT
ATC100B8R2BT500XT
ATC100B1R3BT500XT
ATC100B1R8BT500XT
ATC100B2R0BT500XT
ATC100B3R9BT500XT
ATC100B1R0BT500XT
B41858-C8477-M000
232272461009
RO4350B
Manufacturer
TDK
TDK
ATC
ATC
ATC
ATC
ATC
ATC
EPCOS
Phycomp
Rogers
MRF8S18210WHSR3 MRF8S18210WGHSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
18.4
18.2
18
G
ps
, POWER GAIN (dB)
17.8
17.6
17.4
17.2
17
16.8
16.6
16.4
1880
1900
1920
1940
1960
1980
2000
2020
V
DD
= 30 Vdc, P
out
= 50 W (Avg.), I
DQ
= 1300 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
PARC
ACPR
IRL
η
D
G
ps
32
30
28
26
--31
--32
--33
ACPR (dBc)
--34
--35
--36
--37
2040
IRL, INPUT RETURN LOSS (dB)
0
--10
--20
--30
--40
--50
--2.8
--3
--3.2
--3.4
--3.6
--3.8
PARC (dB)
f, FREQUENCY (MHz)
Figure 3. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 50 Watts Avg.
--20
IM3--U
--30
--40
--50
IM7--U
V
DD
= 30 Vdc, P
out
= 80 W (PEP)
--60 I = 1300 mA
DQ
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
--70
1
10
TWO--TONE SPACING (MHz)
IM5--U
IM5--L
IM7--L
IM3--L
IMD, INTERMODULATION DISTORTION (dBc)
100
300
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18.5
G
ps
, POWER GAIN (dB)
18
17.5
17
16.5
16
0
--1
--2
--3
--4
--5
--6
--3 dB = 48 W
PARC
70
η
D
,
DRAIN EFFICIENCY (%)
60
50
40
30
20
10
30
50
70
90
110
P
out
, OUTPUT POWER (WATTS)
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
V
DD
= 30 Vdc, I
DQ
= 1300 mA, f = 1960 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
--1 dB = 25 W
--2 dB = 35 W
G
ps
ACPR
η
D
10
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
5
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