STX616
High voltage NPN power transistor
Features
■
■
■
High voltage capability
High DC current gain
Minimum lot-to-lot spread for reliable operation
Applications
■
■
Switching mode power supply
Battery charger
TO-92
TO-92AP
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage withstand capability. The
device is designed for use in SMPS and battery
charger.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
X616
X616
Package
TO-92
TO-92AP
Packaging
Bulk
Ammopack
Order code
STX616
STX616-AP
October 2007
Rev 2
1/8
www.st.com
8
Electrical characteristics
STX616 STX616-AP
1
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
980
500
12
1.5
2.4
0.8
1.2
2.8
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Table 3.
Symbol
R
thj-case
R
thj-amb
Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
__max
__max
Value
44.6
150
Unit
°C/W
°C/W
2/8
STX616 STX616-AP
Electrical characteristics
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
CES
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
=0)
(1)
Test conditions
V
CE
= 980V
V
CE
= 980V
I
C
= 10mA
T
c
= 125°C
Min.
Typ.
Max.
50
0.5
Unit
µA
mA
V
CE(sus)
Collector-emitter
sustaining voltage
(I
B
= 0)
Emitter-base voltage
(I
C
= 0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
500
V
V
EBO
V
CE(sat) (1)
I
E
= 1mA
I
C
= 0.2A
I
C
= 1A
I
C
= 0.2A
I
C
= 1A
I
C
= 500µA
I
B
= 40mA
I
B
= 200mA
I
B
= 40mA
I
B
= 200mA
V
CE
= 2V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
12
0.5
1
1
1.4
17
25
12
4
V
V
V
V
V
V
BE(sat) (1)
h
FE (1)
DC current gain
I
C
= 200mA
I
C
= 500mA
I
C
= 1.5A
t
on
t
s
t
f
t
on
t
s
t
f
t
s
t
f
t
s
t
f
RESISTIVE LOAD
Turn-on time
Storage time
Fall time
RESISTIVE LOAD
Turn-on time
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
V
CC
= 250V
I
B1
= 65mA
I
C
= 250mA
I
B2
= -130mA
0.2
5
0.65
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
V
CC
= 250V
I
C
= 0.8A
1
2.5
0.35
I
B1
= 160mA I
B2
= -0.4A
V
cl
= 300V
I
B1
= 65mA
L = 200µH
V
cl
= 300V
I
B1
= 160mA
L = 200µH
I
C
= 250mA
I
B2
= -130mA
I
C
= 0.8A
I
B2
= -0.4A
2.5
0.25
5
0.5
Note (1) Pulsed duration = 300
µs,
duty cycle
≤
1.5%
3/8
Package mechanical data
STX616 STX616-AP
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
4/8
STX616 STX616-AP
Package mechanical data
TO-92 BULK SHIPMENT MECHANICAL DATA
DIM.
mm.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
5
O
TYP
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
A
b
D
E
e
e1
L
R
S1
W
V
0102782 C
5/8
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