NVMFS4C03N
Power MOSFET
30 V, 1.7 mW, 159 A, Single N−Channel
Logic Level, SO−8FL
Features
•
•
•
•
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V
(BR)DSS
30 V
R
DS(on)
MAX
1.7 mW @ 10 V
159 A
2.4 mW @ 4.5 V
D (5,6)
I
D
MAX
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS4C03NWF − Wettable Flanks Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1, 2,
3)
Power Dissipation
R
qJC
(Notes 1, 2)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 2,
3)
Power Dissipation
R
qJA
(Notes 1, 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 25°C
T
A
= 25°C
Steady
State
T
A
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
, T
stg
I
S
E
AS
T
L
3.71
900
−55 to
175
64
549
260
W
A
°C
A
mJ
°C
P
D
I
D
77
34.9
W
A
Symbol
V
DSS
V
GS
I
D
Value
30
"20
159
Unit
V
V
A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
D
4C03xx
AYWZZ
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 11 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
4C03N = Specific Device Code for
NVMFS4C03N
4C03WF= Specific Device Code of
NVMFS4C03NWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
NVMFS4C03NT1G
NVMFS4C03NT3G
NVMFS4C03NWFT1G
NVMFS4C03NWFT3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
1500 /
Tape & Reel
5000 /
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.95
40
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 2
Publication Order Number:
NVMFS4C03N/D
NVMFS4C03N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
18.2
1
10
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
= 20 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.3
4.8
2.2
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 30 A
1.4
2.0
136
1.0
1.7
2.4
mW
S
W
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
g
FS
R
G
V
DS
= 3 V, I
D
= 30 A
T
A
= 25
°C
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
3071
1673
67
20.8
4.9
8.5
4.7
45.2
nC
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
W
14
32
27
17
ns
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.75
0.6
47
1.1
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
23
24
39
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFS4C03N
TYPICAL CHARACTERISTICS
250
225
I
D
, DRAIN CURRENT (A)
200
175
150
125
100
75
50
25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
3.0 V
2.8 V
2.6 V
V
GS
= 10 V
3.2 V
4.5 V
3.8 V
3.6 V
3.4 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
250
225
200
175
150
125
100
75
50
25
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 150°C
T
J
= 25°C
T
J
= −55°C
V
DS
= 3 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
0
25
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
50
75
100 125 150 175 200
225 250
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
−50 −25
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
V
GS
= 0 V
T
J
= 125°C
1000
T
J
= 100°C
T
J
= 85°C
100
10
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVMFS4C03N
TYPICAL CHARACTERISTICS
10000
C
iss
C, CAPACITANCE (pF)
C
oss
1000
12
11
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
Q
g
, TOTAL GATE CHARGE (nC)
Q
gs
Q
gd
T
J
= 25°C
V
DS
= 15 V
I
D
= 30 A
6
3
0
50
V
DS
V
GS
12
9
Q
T
18
15
100
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
10
0.1
1
10
C
rss
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 4.5 V
t, TIME (ns)
t
d(off)
t
f
100
t
r
1000
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
100
10
T
J
= 150°C
T
J
= 25°C
t
d(on)
1
T
J
= −55°C
0.1
10
0.1
1
10
100
R
G
, GATE RESISTANCE (W)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10 ms
10
ms
V
GS
≤
10 V
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
0.1
1
10
10
100
ms
1 ms
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
NVMFS4C03N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10 20%
10%
5%
1 2%
1%
0.1
R
qJA
Steady State = 40°C/W
P
CB
Cu Area = 650 mm2
P
CB
Cu Thk = 2 oz
R(t) (°C/W)
0.01
Single Pulse
0.001
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (sec)
Figure 12. Thermal Impedance
(Junction−to−Ambient)
100
I
PEAK
, (A)
T
J(initial)
= 25°C
10
T
J(initial)
= 100°C
1
1.00E−04
1.00E−03
TIME IN AVALANCHE (s)
1.00E−02
Figure 13. Avalanche Characteristics
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