BTW68
30 A SCRs
Features
■
■
■
■
A
On-state rms current: 30 A
Blocking voltage: up to 1200 V
Gate current: 50 mA
UL 2500 V insulation (file ref E81734)
G
K
Description
Available in a high power insulated package, the
BTW68 series is suitable for applications where
power handling and power dissipation are critical
such as solid state relays, welding equipment and
high power motor control.
Based on a clip assembly technology, this device
offers a superior performance in surge current
handling capabilities.
Thanks to the internal ceramic pad, the device
provides high voltage insulation (2500 V
RMS)
and
complies with UL standards (file ref: E81734).
Table 1.
K
A
G
TOP3 ins.
Device summary
Symbol
I
T(RMS)
Value
30 A
600 to 1200 V
50 mA
V
DRM
/V
RRM
I
GT
July 2010
Doc ID 17757 Rev 3
1/8
www.st.com
8
Characteristics
BTW68
1
Characteristics
Table 2.
Symbol
I
T(RMS)
IT
(AV)
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
V
RGM
Absolute maximum ratings (limiting values)
Parameter
On-state current rms (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I
²
t Value for fusing
Critical rate of rise of on-state current
F = 60 Hz
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
t
p
= 20 µs
t
p
= 8.3 ms
t
p
= 10 ms
T
c
= 80 °C
T
c
= 80 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
Value
30
19
420
A
400
800
100
8
1
- 40 to + 150
- 40 to + 125
5
A
2
S
A/µs
A
W
°C
V
Unit
A
A
Table 3.
Symbol
I
GT
V
GT
V
GD
t
gt
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
t
q
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Test conditions
V
D
= 12 V, R
L
= 33
Ω
V
D
= V
DRM,
R
L
= 3.3 kΩ
V
D
= V
DRM
, I
G
= 200 mA, dI
G
/dt = 1.5 A/µs
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT
V
D
= 67 % V
DRM
gate open
I
TM
= 60 A, t
p
= 380 µs
V
DRM
= V
RRM
V
D
= 67% V
DRM
, I
TM
= 60 A, V
R
= 75 V
dI
TM
/dt = 30 A/µs, dV
D
/dt = 20 V/µs
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
TYP.
V
DRM
= 800 V
V
DRM
= 1000 V
T
j
= 125 °C
T
j
= 125 °C
MIN.
MAX.
MIN.
TYP.
MAX.
TYP.
MIN.
250
MAX.
MAX.
6
100
mA
µs
2.1
20
V
µA
Value
50
1.5
0.2
2
75
40
500
V/µs
Unit
mA
V
V
µs
mA
mA
Table 4.
Symbol
R
th(j-c)
R
th(j-a)
Thermal resistance
Parameter
Junction to case (D.C.)
Junction to ambient
Value
1.1
50
Unit
°C/W
°C/W
2/8
Doc ID 17757 Rev 3
BTW68
Characteristics
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
P(W)
50
R
th
= 1°C/W
Correlation between maximum
average power dissipation and
maximum allowable temperature
T
case
(°C)
R
th
= 0°C/W
α
= 180°
P(W)
50
D.C.
40
α
= 180°
α
= 120°
30
40
(T
amb
and T
lead
)
50
α
= 60°
20
α
= 90°
30
75
α
= 30°
360°
20
R
th
= 2°C/W
100
R
th
= 3°C/W
10
10
I
T(RMS)
(A)
0
0
5
10
15
20
25
α
0
30
35
T
amb
(°C)
125
0
20
40
60
80
100
120
140
Figure 3.
Average on-state current versus case Figure 4.
temperature
1.00
DC
Relative variation of thermal
impedance versus pulse duration
I
T(AV)
(A)
50
K=[Z
th(j-c)
/R
th(j-c)
]
Z
th(j-c)
40
0.10
30
α
= 180°
20
0.01
10
Z
th(j-a)
T
case
(°C)
0
0
25
50
75
100
125
t
p
(s)
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Figure 5.
Relative variation of gate trigger
current versus junction
temperature
Figure 6.
Surge peak on-state current versus
number of cycles
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
350
300
I
TSM
(A)
2
t
p
=10ms
250
1.5
I
GT
One cycle
200
T
j
initial=25°C
1
I
H
& I
L
150
100
0.5
50
T
j
(°C)
0
-40 -30 -20 -10
0
10 20
30
40 50
60 70 80
90 100 110 120 130
Number of cycles
0
1
10
100
1000
Doc ID 17757 Rev 3
3/8
Characteristics
Figure 7.
Non repetitive surge peak on-state Figure 8.
current and corresponding value of
I
2
t versus sinusoidal pulse width
I
TM
(A)
1000
BTW68
On-state characteristics
(maximum values)
I
TSM
(A), I
2
t (A
2
s)
2000
pulse with width t
p
< 10 ms, and corresponding values of I²t
I
TSM
I
2
t
T
j
initial = 25 °C
T
j
=max
100
10
T
j
=25°C
T
j
max.:
V
t0
=1.27V
R
d
=12m
Ω
200
1
2
5
t
p
(ms)
10
V
TM
(V)
1
1
2
3
4
5
6
4/8
Doc ID 17757 Rev 3
BTW68
Ordering information scheme
2
Ordering information scheme
Figure 9.
Ordering information scheme
BTW
Standard SCR series
Type
68 = 30A
Voltage
600 = 600V
800 = 800V
1000 = 100V
1200 = 1200V
Packing mode
RG = Tube
68
-
600
RG
Table 5.
Product Selector
Voltage (xxx)
Part numbers
600 V
BTW68-600RG
BTW68-800RG
BTW68-1000RG
BTW68-1200RG
X
X
800 V
1000 V
1200 V
Sensitivity
Package
50 mA
X
X
TOP3 Ins.
Doc ID 17757 Rev 3
5/8
Microchip MCU
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