MUSES8920
High Quality Audio J-FET Input
Dual Operational Amplifier
■
GENERAL DESCRIPTION
The MUSES8920 is a high quality audio J-FET input dual operational
amplifier, which is optimized for high-end audio, professional audio and
portable audio applications.
It is suitable for audio preamplifiers, active filters, and line amplifiers.
In addition, J-FET input type has advantage of the low input bias current,
it is suitable for transimpedance amplifier (I/V converter).
■
PACKAGE OUTLINE
MUSES8920D
(DIP8)
MUSES8920E
(SOP8 JEDEC 150mil (EMP8))
■
FEATURES
●Operating
Voltage
●Low
Noise
●THD
●Slew
Rate
●GBW
●High
Output Current
●J-FET
Input
●Bipolar
Technology
●Package
Outline
MUSES8920KX7
(DFN8-X7 (ESON8-X7))
±3.5V to ±17V
8nV/√Hz typ.
0.0004% typ. (Av=1)
25V/µs typ.
11MHz typ.
100mA typ.(short-circuit current)
■
PIN CONFIGLATION
DIP8, SOP8 JEDEC 150mil
1
2
3
A
B
8
7
6
5
DIP8, SOP8 JEDEC 150mil
DFN8-X7 (ESON8-X7)(3.5mm x 4.0mm)
4
1. A OUTPUT
2. A -INPUT
3. A +INPUT
4. V-
5. B +INPUT
6. B -INPUT
7. B OUTPUT
8.V+
DFN8-X7 (ESON8-X7)
■
APPLICATIONS
●
Portable Audio
●
Home Audio
●
Professional Audio
●
Car Audio
Top View
1
2
3
4
A
B
Bottom View
8
7
6
5
8
7
6
5
Exposed
Pad
1
2
3
4
About Exposed Pad
Connect the Exposed Pad on the GND.
I/V
Digital
Input
DA
Converter
I/V
LPF
Buff
Analog
Output
DAC Output I/V converter + LPF circuit
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
Ver.10
-1-
MUSES8920
■
ABSOLUTE MAXIMUM RATING
(Ta=25ºC unless otherwise specified)
PARAMETER
Supply Voltage
Differential Input Voltage Range
Common Mode Input Voltage Range
Power Dissipation
Operating Temperature Range
Storage Temperature Range
SYMBOL
V /V
V
ID
V
ICM
P
D
Topr
Tstg
+
-
RATING
±18
±30
±15
DIP8:870
SOP8:900
(Note2)
DFN8-X7: 690
(Note2)
2900
(Note3)
-40 to +125
-50 to +150
(Note1)
UNIT
V
V
V
mW
ºC
ºC
(Note1) For supply Voltages less than ±15 V, the maximum input voltage is equal to the Supply Voltage.
(Note2) Mounted on the EIA/JEDEC standard board (114.3×76.2×1.6mm, two layer, FR-4). DFN8 is connecting to GND in the center part on the back.
(Note3) EIA/JEDEC STANDARD Test board (76.2 x 114.3 x 1.6mm, 4layers, FR-4, Applying a thermal via hole to a board based on JEDEC standard JESD51-5)
mounting. The PAD connecting to GND in the center part on the back.
(Note4) NJM8920 is ESD (electrostatic discharge) sensitive device.
Therefore, proper ESD precautions are recommended to avoid permanent damage or loss of functionality.
■
RECOMMENDED OPERATING VOLTAGE
(Ta=25ºC)
PARAMETER
Supply Voltage
SYMBOL
V
+
/V
-
TEST CONDITION
MIN.
±3.5
TYP.
-
MAX.
±17
UNIT
V
■
ELECTRICAL CHARACTERISTICS
●
DC CHARACTERISTICS
(V
+
/V
-
=±15V, Ta=25ºC, unless otherwise specified)
PARAMETER
Supply Current
Input Offset Voltage
Input Bias Current
Input Offset Current
Voltage Gain1
Voltage Gain2
Voltage Gain3
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Maximum Output Voltage1
Maximum Output Voltage2
Maximum Output Voltage3
Common Mode Input Voltage Range
SYMBOL
Icc
V
IO
I
B
I
IO
A
V1
A
V2
A
V3
CMR
SVR
V
OM1
V
OM2
V
OM3
V
ICM
TEST CONDITION
RL=∞, No Signal
R
S
=50Ω,
MIN.
-
-
-
-
106
105
105
80
80
±13
±12.8
±12.5
±12.5
TYP.
9
0.8
5
2
135
133
130
110
110
±14
±13.8
±13.5
±14
MAX.
12
5
250
220
-
-
-
-
-
-
-
-
-
UNIT
mA
mV
pA
pA
dB
dB
dB
dB
dB
V
V
V
V
R
L
=10kΩ, Vo=±13V
R
L
=2kΩ, Vo=±12.8V
R
L
=600Ω, Vo=12.5V
V
ICM
=±12.5V
(Note5)
V
+
/V
-
=±3.5 to ±17V
(Note6)
R
L
=10kΩ
R
L
=2kΩ
R
L
=600Ω
CMR≥80dB
(Note5) CMR is calculated by specified change in offset voltage. (V
ICM
=0V to +12.5V, V
ICM
=0V to -12.5V)
+ -
(Note6) SVR is calculated by specified change in offset voltage. (V /V =±3.5 to ±17V)
●
AC CHARACTERISTICS
(V
+
/V
-
=±15V, Ta=25ºC, unless otherwise specified)
PARAMETER
Gain Bandwidth Product
Unity Gain Frequency
Phase Margin
Equivalent Input Noise Voltage1
Equivalent Input Noise Voltage2
Equivalent Input Noise Voltage3
Total Harmonic Distortion
Channel Separation
Slew Rate
(Note7) DIP8 and SOP8
(Note8) DFN8-X7
SYMBOL
GB
f
T
Φ
M
V
NI1
V
NI2
V
NI3
THD
CS
SR
TEST CONDITION
f=10kHz
A
V
=+100, R
S
=100Ω, R
L
=2kΩ, C
L
=10pF
A
V
=+100, R
S
=100Ω, R
L
=2kΩ, C
L
=10pF
f=1kHz
RIAA, R
S
=2.2kΩ, 30kHz, LPF
(Note7)
f=20 to 20kHz
(Note8)
f=1kHz , A
V
=+10, Vo=5Vrms, R
L
=2kΩ
f=1kHz , A
V
=-100, R
L
=2kΩ
A
V
=1, V
IN
=2Vp-p, R
L
=2kΩ, C
L
=10pF
MIN.
-
-
-
-
-
-
-
-
-
TYP.
11
10
70
8
1.1
1.1
0.0004
150
25
MAX.
-
-
-
-
3.5
-
-
-
-
UNIT
MHz
MHz
Deg
nV/√Hz
μVrms
μVrms
%
dB
V/us
-2-
Ver.10
MUSES8920
■
POWER DISSIPATION vs. AMBIENT TEMPERATURE
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called Power
Dissipation P
D
. The dependence of the MUSES8920 P
D
on ambient temperature is shown in Fig 1. The plots are depended on
following two points. The first is P
D
on ambient temperature 25ºC, which is the maximum power dissipation. The second is 0W,
which means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage
temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the P
D
lower than 25ºC to it on
25ºC. The P
D
is shown following formula as a function of the ambient temperature between those points.
Dissipation Power
P
D
=
Tjmax - Ta
ja
[W] (Ta=25ºC to Ta=150ºC)
Where,
ja
is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, P
D
is different in each package.
While, the actual measurement of dissipation power on MUSES8920 is obtained using following equation.
(Actual Dissipation Power) = (Supply Current Icc) X (Supply Voltage V
+
– V-) – (Output Power Po)
The MUSES8920 should be operated in lower than P
D
of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
Fig 1
3000
DFN8-X7 4layers
2500
Power Dissipation Pd [mW]
2000
1500
1000
SOP8
DIP8
500
DFN8-X7 2layers
0
0
50
100
Ambient Temperature Ta [˚C]
150
Ver.10
-3-
MUSES8920
■
PACKAGE OUTLINE (DFN8-X7)
-4-
Ver.10
MUSES8920
■
TYPICAL CARACTERISTICS
THD+N vs. Output Voltage
(Frequency)
10
V /V =±15V, A
V
=+10, R
L
=2k, Ta=25ºC
+
-
THD+N vs. Output Voltage
(Frequency)
10
V
+
/V
-
=±3.5V, A
V
=+10, R
L
=2k, Ta=25ºC
1
1
f=20Hz
THD+N [%]
0.1
f=20kHz
f=1kHz
f=20kHz
THD+N [%]
0.1
f=1kHz
0.01
0.01
f=20kHz
0.001
0.001
0.0001
0.01
0.1
1
10
Output Voltage [Vrms]
100
0.0001
0.01
0.1
1
10
Output Voltage [Vrms]
100
Voltage Noise vs. Frequency
100
Equivalent Input Noise Voltage
[nV/Hz]
V
+
/V
-
=±15V, A
V
=+100, R
S
=100Ω, R
L
=, Ta=25ºC
Channel Separation vs. Frequency
-120
-125
Channel Separation [dB]
V
+
/V
-
=±15V, A
V
=-100, R
L
=2kΩ, Ta=25ºC
80
-130
-135
-140
-145
-150
-155
60
40
20
0
1
10
100
1k
Frequency [Hz]
10k
100k
-160
10
100
1k
10k
Frequency [Hz]
100k
Gain vs. Frequency
(Temperature)
60
Gain
V
+
/V
-
=±15V, A
V
=+100, R
L
=2kΩ, C
L
=10pF
Phase Margin vs. Temperature
(Supply Voltage)
90
V
+
/V
-
=±15V, A
V
=+100, R
S
=100Ω, R
L
=2kΩ, C
L
=10pF, V
IN
=-30dBm
40
Voltage Gain [dB]
20
0
-20
-40
-60
10k
Ta=+85ºC
Phase
Ta=+85ºC
Ta=+25ºC
Phase Margin [deg]
Ta=-40ºC
-45
-90
-135
-180
100M
Phase [deg]
0
80
V
+
/V
-
=±15V
70
V
+
/V
-
=±3.5V
Ta=+25ºC
Ta=-40ºC
60
-50
-25
0
25 50 75 100 125 150
Ambient Temperature [ºC]
100k
1M
10M
Frequency [Hz]
Ver.10
-5-
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