Si3948DV
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.105 at V
GS
= 10 V
0.175 at V
GS
= 4.5 V
I
D
(A)
± 2.5
± 2.0
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G1
1
6
D1
D
1
D
2
3 mm
S2
2
5
S1
G
1
G
2
G2
3
4
D2
2.85 mm
S
1
S
2
N-Channel MOSFET
Ordering Information:
Si3948DV-T1-E3 (Lead (Pb)-free)
Si3948DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
± 20
± 2.5
± 2.0
±8
1.05
1.15
0.73
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Lead
Notes:
a. Surface Mounted on FR4 board.
b. t
≤
5 s.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJL
Typical
93
130
75
Maximum
110
150
90
°C/W
Unit
Document Number: 70969
S09-1816-Rev. B, 14-Sep-09
www.vishay.com
1
Si3948DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.05 A, dI/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
G
= 6
Ω
V
DS
= 15 V, V
GS
= 5.0 V, I
D
= 1.8 A
2.1
0.7
0.7
7
9
13
5
35
11
14
20
8
60
ns
3.2
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 4.5 V, I
D
= 2.0 A
V
DS
= 10 V, I
D
= 2.5 A
I
S
= 1.05 A, V
GS
= 0 V
5
0.085
0.140
4.3
0.81
1.1
0.105
0.175
1.0
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70969
S09-1816-Rev. B, 14-Sep-09
Si3948DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
V
GS
= 10 V thru 5 V
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
25 °C
125 °C
6
10
T
C
= - 55 °C
6
4V
4
4
2
2V
0
0
1
2
3
4
5
3V
2
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.25
300
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.20
C - Capacitance (pF)
250
C
iss
200
0.15
V
GS
= 4.5
V
V
GS
= 10
V
150
0.10
100
C
oss
50
C
rss
0
5
10
15
20
25
30
0.05
0
0
1
2
3
4
5
6
7
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
1.8
1.6
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.2
1.0
0.8
0.6
0
0
1
2
3
4
0.4
- 50
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
I
D
= 1.8 A
V
GS
= 10 V
I
D
= 2.5 A
6
4
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70969
S09-1816-Rev. B, 14-Sep-09
www.vishay.com
3
Si3948DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.40
I
D
= 2 A
R
DS(on)
- On-Resistance (Ω)
0.32
I
D
= 2.5 A
0.24
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.16
0.08
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
I
D
= 250
µA
6
V
GS(th)
Variance (V)
0.0
Power (W)
8
On-Resistance vs. Gate-to-Source Voltage
0.2
- 0.2
4
- 0.4
2
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
Time (s)
1
10
30
T
J
- Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 70969
S09-1816-Rev. B, 14-Sep-09
Si3948DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?70969.
Document Number: 70969
S09-1816-Rev. B, 14-Sep-09
www.vishay.com
5
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