VS-150EBU02
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 150 A FRED Pt
®
FEATURES
• Ultrafast recovery time
1
• 175 °C max. operating junction temperature
• Screw mounting only
Cathode
2
Anode
• Designed and qualified
JEDEC
®
-JESD 47
• PowerTab
®
package
according
to
PowerTab
®
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Package
Circuit configuration
150 A
200 V
0.79 V
See recovery table
175 °C
PowerTab
®
Single
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 116 °C
T
C
= 25 °C
Square wave, 20 kHz
TEST CONDITIONS
MAX.
200
150
1600
380
-55 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 150 A
I
F
= 150 A, T
J
= 175 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
0.99
0.79
-
-
180
3.5
MAX.
-
1.13
0.90
50
2
-
-
μA
mA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 30-Jan-18
Document Number: 93002
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-150EBU02
www.vishay.com
Vishay Semiconductors
SYMBOL
t
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 150 A
V
R
= 160 V
dI
F
/dt = 200 A/μs
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
TYP.
-
34
58
4.5
9.0
87
300
MAX.
45
-
-
-
-
-
-
A
nC
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device
Case style PowerTab
®
1000
SYMBOL
R
thJC
R
thCS
TEST CONDITIONS
Mounting surface, flat, smooth, and greased
MIN.
-
-
-
-
1.2
(10)
TYP.
-
0.2
-
0.18
-
MAX.
0.35
-
5.02
-
2.4
(20)
UNITS
K/W
g
oz.
N·m
(lbf · in)
150EBU02
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (μA)
100
10
1
0.1
0.01
0.001
T
J
= 175 °C
125 °C
100
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
10
25 °C
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
50
100
150
200
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
100
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 30-Jan-18
Document Number: 93002
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-150EBU02
www.vishay.com
Vishay Semiconductors
1
Z
thJC
- Thermal Impedance (°C/W)
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ Tc
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
70
60
50
I
F
= 150 A
I
F
= 75 A
Allowable Case Temperature (°C)
160
140
120
100
80
see
note (1)
60
0
50
100
150
200
250
Square
wave (D = 0.50)
80 % Rated V
R
applied
DC
t
rr
(ns)
40
30
20
10
100
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
250
dI
F
dt
(A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
900
800
V
R
= 160 V
T
J
= 125 ˚ C
T
J
= 25 ˚C
I
F
= 150 A
I
F
= 75 A
Average Power Loss (W)
200
RMS Limit
700
600
150
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
0
50
100
150
200
250
Q
rr
(nC)
500
400
300
200
100
0
100
100
50
0
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
(1)
dI
F
dt
(A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 30-Jan-18
Document Number: 93002
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-150EBU02
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 30-Jan-18
Document Number: 93002
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-150EBU02
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
150
2
E
3
B
4
U
5
02
6
Vishay Semiconductors product
Current rating (150 = 150 A)
Single diode
PowerTab
®
(ultrafast/hyperfast only)
Ultrafast recovery
Voltage rating (02 = 200 V)
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Application note
SPICE model
www.vishay.com/doc?95240
www.vishay.com/doc?95370
www.vishay.com/doc?95179
www.vishay.com/doc?96503
Revision: 30-Jan-18
Document Number: 93002
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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