PTFA210701E
PTFA210701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
70 W, 2110 – 2170 MHz
Description
The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs
designed for single- and dual-carrier WCDMA power amplifier
applications in the 2110 MHz to 2170 MHz band. Features include
input and output matching, and thermally-enhanced packages with
slotted or earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA210701E
Package H-36265-2
PTFA210701F
Package H-37265-2
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 550 mA, ƒ = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-30
35
30
Features
•
•
•
IM3 (dBc), ACPR (dBc)
-35
-40
-45
IM3
ACPR
in
ue
25
20
15
10
Efficiency
Drain Efficiency (%)
d
•
•
•
•
-50
-55
-60
30
32
nt
sc
o
5
44
34
36
38
40
42
Average Output Power (dBm)
WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 550 mA, P
OUT
= 18 W average
ƒ
1
= 2135 MHz, ƒ
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
di
RF Characteristics
pr
Symbol
G
ps
Thermally-enhanced packages,
Pb-free and
RoHS-compliant
Broadband internal matching
Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 42 dBm
- Linear Gain = 16.5 dB
- Efficiency = 27.0%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –42.5 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 80 W
- Efficiency = 58%
Integrated ESD protection: Human Body Model,
Class
2
(minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
70 W (CW) output power
od
Min
15.5
28
—
uc
Typ
16.5
29
–36.5
t
Max
—
—
–35.5
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DISCONTINUED
1 of 10
*See Infineon distributor for future availability.
Rev. 03,
2014-02-12
PTFA210701E
PTFA210701F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 550 mA, P
OUT
= 70 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
16.5
41
–29.5
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
od
Min
65
—
—
—
2.0
—
uc
Typ
—
—
—
0.125
2.5
—
t
65
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
V
(BR)DSS
I
DSS
I
DSS
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 550 mA
V
GS
= 10 V, V
DS
= 0 V
ue
d
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
nt
in
Symbol
V
DSS
V
GS
T
J
P
D
pr
R
DS(on)
V
GS
I
GSS
Value
Unit
V
V
°C
W
W/°C
°C
°C/W
sc
o
–0.5 to +12
200
190
1.09
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 70 W CW)
di
Total Device Dissipation
T
STG
R
θJC
–40 to +150
0.92
Ordering Information
Type and Version
PTFA210701E
PTFA210701F
V4
V4
Package Type
H-36265-2
H-37265-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA210701E
PTFA210701F
*See Infineon distributor for future availability.
Data Sheet
– DISCONTINUED
2 of 10
Rev. 03,
2014-02-12
PTFA210701E
PTFA210701F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Broadband Performance
V
DD
= 30 V, I
DQ
= 550 mA, P
OUT
= 42.5 dBm
Two-tone Drive-up at Optimum I
DQ
V
DD
= 30 V, I
DQ
= 550 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
Intermodulation Distortion (dBc)
10
5
-25
-30
-35
-40
-45
-50
-55
-60
-65
45
40
35
30
25
Gain (dB), Efficiency (%)
Input Return Loss (dB)
t
43
45
47
49
60
80
-5
-10
IM3
30
25
20
15
10
5
20
15
Return Loss
-20
-30
-35
10
2070 2090 2110 2130 2150 2170 2190 2210
pr
Gain
-25
35
Frequency (MHz)
d
Two-carrier WCDMA at Selected Biases
nt
in
ue
sc
o
V
DD
= 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I
DQ
-30
-35
18
17
V
DD
= 30 V, I
DQ
= 550 mA, ƒ = 2170 MHz
T
CASE
= 25°C
T
CASE
= 90°C
60
50
3rd Order IMD (dBc)
-45
-50
-55
500 mA
-60
30
32
34
36
38
40
42
44
550 mA
600 mA
Gain (dB)
-40
650 mA
16
15
14
Gain
40
30
20
Efficiency
13
0
20
40
10
100
Average Output Power (dBm)
Output Power (W)
Data Sheet
– DISCONTINUED
3 of 10
Rev. 03,
2014-02-12
Drain Efficiency (%)
di
450 mA
od
-15
IM5
IM7
37
39
41
Output Power, PEP (dBm)
Power Sweep, CW Conditions
Drain Efficiency (%)
Efficiency
0
Efficiency
35
uc
PTFA210701E
PTFA210701F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 550 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-5
Voltage Sweep
I
DQ
= 550 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz, P
OUT
(PEP) = 48.5 dBm
50
Adjacent Channel Power Ratio (dB)
-30
-35
-40
-45
-50
-55
30
Drain Efficiency (%)
3rd Order IMD (dBc)
40
uc
27
29
Efficiency
-20
-25
-30
-35
-40
-45
t
Efficiency
IM3 Up
-15
40
35
30
25
20
30
20
10
0
pr
ACPR
32
34
36
38
40
42
44
Gain
31
33
15
10
23
25
Average Output Power (dBm)
d
Supply Voltage (V)
nt
in
ue
V
DD
= 30 V, I
DQ
= 550 mA, ƒ = 2140 MHz,
P
OUT
= 48.5 dBm PEP
-20
sc
o
Intermodulation Distortion Products
vs. Tone Spacing
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
Intermodulation Distortion (dBc)
di
3rd order
Normalized Bias Voltage (V)
-25
-30
-35
-40
-45
-50
-55
0
5
10
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
5th
7th
15
20
25
30
35
40
Tone Spacing (MHz)
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
– DISCONTINUED
4 of 10
Rev. 03, 2014-02-12
Gain (dB), Drain Efficiency (%)
ACPR Up
ACPR Low
50
-10
45
od
PTFA210701E
PTFA210701F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
D
Z Source
Ω
R
19.94
20.94
21.41
21.83
22.26
jX
1.61
0.77
0.11
–0.69
–2.09
Z Load
Ω
R
4.50
4.20
4.02
3.88
3.66
jX
–2.87
–2.50
–2.29
–2.07
–1.66
Z
0
= 50
Ω
Z Source
Z Load
MHz
2060
2110
2140
2170
G
S
-
W
AV
E
LE
NGT
H
S T
OW
A
0.0
0.1
0.2
0.3
pr
d
0.4
D
LOA
D
-
S
TOW
AR
NGT
H
E
LE
Z Load
2220 MHz
2060 MHz
0. 1
See next page for circuit information
di
sc
o
nt
V
in
ue
2220 MHz
0.5
2060 MHz
od
Z Source
5 of 10
Rev. 03,
2014-02-12
Data Sheet
– DISCONTINUED
uc
2220
t
0.1
嵌入式系统
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