PTVA093002TC
Thermally-Enhanced High Power RF LDMOS FET
300 W, 50 V, 703 – 960 MHz
Description
The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in
multi-standard cellular power amplifier applications, it can be used as
single-ended or in a Doherty configuration. It features dual-path design,
input matching, and a thermally-enhanced surface-mount package.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA093002TC
Package H-49248H-4, formed leads
Single-carrier 3GPP WCDMA
V
DD
= 50 V, I
DQ
= 400 mA, ƒ = 758 MHz
3.84 MHz bandwidth, 10 dB PAR
24
60
Features
•
Typical CW performance in a combined-lead
50-ohm single-ended fixture, 780 MHz, 50 V
- Output power at P
1dB
= 158 W
- Gain = 18.2 dB
- Efficiency = 52%
Typical pulsed CW performance in a combined-lead
50-ohm single-ended fixture, 870 MHz, 50 V
- Output power at P
3dB
= 280 W
- Gain = 16.2 dB
- Efficiency = 50%
Integrated ESD protection, Human Body Model
class 2 (per JESD22-A114)
Capable of withstanding a 10:1 load mismatch at
50 V, 63 W (CW) output power
Low thermal resistance
Pb-free and RoHS compliant
Peak/Average Ratio, Gain (dB)
Efficiency
20
40
•
Efficiency (%)
Gain
16
12
8
20
0
-20
•
•
PAR @ 0.01% CCDF
4
0
25
30
35
40
45
50
a093002tc-gr1a
-40
•
-60
55
•
Average Output Power (dBm)
RF Specifications
Single-carrier WCDMA Characteristics
(device with flat leads tested in an Infineon Doherty production test fixture)
V
DD
= 50 V, I
DQ
= 400 mA, V
GSpeak
= 1.9 V, P
OUT
= 63 W average, ƒ = 803 MHz.
3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF.
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
17.5
40
—
Typ
18.5
45
–34
Max
—
—
–32
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2014-06-16
PTVA093002TC
Typical Performance
(data taken in a reference test fixture)
Single-carrier 3GPP WCDMA
V
DD
= 50 V, I
DQ
= 400 mA, ƒ = 780 MHz
3.84 MHz bandwidth, 10 dB PAR
24
60
24
Single-carrier WCDMA Drive-up
V
DD
= 50 V, I
DQ
= 400 mA, ƒ = 803 MHz
3.84 MHz bandwidth, 10 dB PAR
60
Peak/Average Ratio, Gain (dB)
Peak/Average Ratio, Gain (dB)
Efficiency
20
16
12
8
Efficiency
20
16
12
8
Gain
40
Gain
40
20
0
-20
0
-20
PAR @ 0.01% CCDF
4
0
25
30
35
40
45
50
a093002tc-gr1b
Efficiency (%)
20
PAR @ 0.01% CCDF
4
0
25
30
35
40
45
50
a093002tc-gr1c
-40
-60
-40
-60
55
55
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier 3GPP WCDMA
V
DD
= 50 V, I
DQ
= 400 mA,
3.84 MHz bandwidth, 10 dB PAR
-10
-20
-30
-40
-50
-60
-70
25
30
35
40
45
50
758 MHz
780 MHz
803 MHz
a093002tc-gr2d
Broadband Performance
3GPP WCDMA single-carrier
V
DD
= 50 V, I
DQ
= 400 mA,
P
OUT
= 48 dBm, PAR = 10 dB
60
20
19
60
Drain Efficiency (%)
55
50
Gain
ACP Up & Low (dBc)
ACP Up
ACP Low
50
40
30
20
10
0
Drain Efficiency(%)
Gain (dB)
18
17
16
15
14
700
750
800
45
40
Efficiency
a093002tc-gr3
35
30
850
55
Average Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 04, 2014-06-16
Efficiency (%)
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