STTH3002C
High efficiency ultrafast diode
Features
■
■
■
■
■
■
Suited for SMPS
Low losses
Low forward and reverse recovery times
High surge current capability
High junction temperature
Insulated version TOP3I:
– Insulated voltage: 2500 V
rms
– Capacitance 12 pF
A2
A1
K
A1
A2
K
A1
A2
K
A1
A2
K
Description
Dual center tab rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in TO-220AB, TO-247, I
2
PAK, D
2
PAK,
and TOP3I, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection
TO-220AB
STTH3002CT
TO-247
STTH3002CW
I2PAK
STTH3002CR
K
NC
A2
A1
D2PAK
STTH3002CG
A1
K
A2
TOP3I
STTH3002CPI
Table 1.
Device summary
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
t
rr
(typ)
2 x 15A
200 V
175 °C
0.75 V
17 ns
August 2008
Rev 4
1/11
www.st.com
Characteristics
STTH3002C
1
Table 2.
Symbol
V
RRM
I
F(RMS)
Characteristics
Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
RMS forward current
TO-220AB, TO-247,
I
2
PAK, D
2
PAK
I
F(AV)
Average forward current,
δ
= 0.5
TOP3I
I
FSM
T
stg
T
j
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
t
p
= 10 ms Sinusoidal
Per diode T
c
= 150 °C
Per device T
c
= 145 °C
Per diode T
c
= 125 °C
Per device T
c
= 105 °C
Value
200
50
15
30
A
15
30
180
-65 to +175
175
A
°C
°C
Unit
V
A
Table 3.
Symbol
Thermal parameters
Parameter
TO-220AB, TO-247, I
2
PAK, D
2
PAK
Per diode
Total
Value
1.5
1.0
3.5
°C/W
Total
TO-220AB, TO-247, I
2
PAK, D
2
PAK
2.3
0.5
1.1
Unit
R
th(j-c)
Junction to case
Per diode
TOP3I
R
th(c)
Coupling
TOP3I
When the two diodes 1 and 2 are used simultaneously:
ΔTj(diode
1) = P (diode 1) X R
th(j-c)
(Per diode) + P (diode 2) x R
th(c)
2/11
STTH3002C
Table 4.
Symbol
I
R(1)
Characteristics
Static electrical characteristics
Parameter
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
R
= V
RRM
I
F
= 15 A
I
F
= 30 A
I
F
= 15 A
I
F
= 30 A
0.75
Min.
Typ
Max.
20
µA
10
125
1.05
1.18
0.84
0.99
V
Unit
Reverse leakage current
V
F(2)
Forward voltage drop
T
j
= 150 °C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 0.69 x I
F(AV)
+ 0.01 I
F
2
(RMS)
Table 5.
Symbol
t
rr
I
RM
t
fr
V
FP
Dynamic characteristics
Parameter
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Test conditions
I
F
= 1 A, dI
F
/dt = 200 A/µs,
V
R
= 30 V, T
j
= 25 °C
I
F
= 15 A, dI
F
/dt = 200 A/µs,
V
R
= 160 V, T
j
= 125 °C
I
F
= 15 A, dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
I
F
= 15 A, dI
F
/dt = 200 A/µs,
T
j
= 25 °C
2.5
Min.
Typ
17
6
Max.
22
7.8
110
Unit
ns
A
ns
V
Figure 1.
Peak current versus duty cycle
(per diode)
Figure 2.
Forward voltage drop versus
forward current (typical values, per
diode)
I
M
(A)
120
I
FM
(A)
100
90
100
I
M
T
80
70
tp
T
j
=150°C
80
δ
=tp/T
P = 30W
60
50
60
P = 15W
40
40
30
T
j
=25°C
P = 10W
20
20
δ
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
0
0.0
0.2
0.4
0.6
0.8
V
FM
(V)
1.0
1.2
1.4
1.6
1.8
3/11
Characteristics
STTH3002C
Figure 3.
Forward voltage drop versus
forward current (maximum values,
per diode)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
I
FM
(A)
100
90
80
70
60
50
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T
j
=25°C
Z
th(j-c)
/R
th(j-c)
1.0
T
j
=150°C
Single pulse
V
FM
(V)
0.1
1.E-03
1.E-02
t
p
(s)
1.E-01
1.E+00
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values, per diode)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 6.
Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
C(pF)
1000
250
225
200
175
150
Q
rr
(nC)
I
F
=15A
V
R
=160V
T
j
=125°C
100
125
100
75
50
T
j
=25°C
V
R
(V)
10
0
50
100
150
200
25
0
10
dI
F
/dt(A/µs)
100
1000
Figure 7.
Reverse recovery time versus
dI
F
/dt (typical values, per diode)
Figure 8.
Peak reverse recovery current
versus dI
F
/dt (typical values, per
diode)
t
rr
(ns)
70
60
50
40
30
20
T
j
=25°C
I
F
=15A
V
R
=160V
I
RM
(A)
14
13
12
11
T
j
=125°C
I
F
=15A
V
R
=160V
10
9
8
7
6
5
4
3
2
1
0
1000
T
j
=25°C
T
j
=125°C
10
dI
F
/dt(A/µs)
0
10
100
dI
F
/dt(A/µs)
10
100
1000
4/11
STTH3002C
Ordering information scheme
Figure 9.
Dynamic parameters versus
junction temperature
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each tab (Epoxy printed
circuit board FR4, e
CU
= 35 µm) for
D
2
PAK
R
th(j-a)
(° C/W)
80
70
60
Qrr;I
RM
[T
j
]/Qrr;I
RM
[T
j
=125°C]
1.4
I
F
=15A
V
R
=160V
1.2
1.0
I
RM
50
40
30
0.8
0.6
0.4
0.2
Q
rr
20
10
T
j
(°C)
0.0
25
50
75
100
125
150
S
CU
(cm²)
0
0
2
4
6
8
10
12
14
16
18
20
2
Ordering information scheme
Figure 11. Ordering information scheme
STTH 30 02 Cxx
Ultrafast switching diode
Average forward current
30 = 30 A
Repetitive peak reverse voltage
02 = 200 V
Package
CT = TO-220AB in Tube
CW = TO-247 in Tube
CR = I2PAK in Tube
CG = D2PAK in Tube
CG-TR = D2PAK in Tape and reel
CPI = TOP3 in Tube
5/11
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