SRAM Low Power Dual-Port RAM IC
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | BGA |
| 包装说明 | 0.50 MM PITCH, GREEN, BGA-100 |
| 针数 | 100 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 65 ns |
| 其他特性 | IT CAN ALSO OPERATES WITH 2.5 AND 3 VOLT |
| I/O 类型 | COMMON |
| JESD-30 代码 | S-PBGA-B100 |
| JESD-609代码 | e1 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | DUAL-PORT SRAM |
| 内存宽度 | 16 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端口数量 | 2 |
| 端子数量 | 100 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 16KX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | BGA |
| 封装等效代码 | BGA100,10X10,20 |
| 封装形状 | SQUARE |
| 封装形式 | GRID ARRAY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 1.8/3 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.000008 A |
| 最大压摆率 | 0.07 mA |
| 最大供电电压 (Vsup) | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL |
| 端子节距 | 0.5 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 |
| Base Number Matches | 1 |
| 70P265L65BYGI8 | 70P245L65BYGI | 70P265L65BYGI | 70P255L90BYGI | 70P245L65BYGI8 | 70P255L65BYGI8 | |
|---|---|---|---|---|---|---|
| 描述 | SRAM Low Power Dual-Port RAM IC | SRAM Low Power Dual-Port RAM IC | SRAM Low Power Dual-Port RAM IC | SRAM Low Power Dual-Port RAM IC | SRAM Low Power Dual-Port RAM IC | SRAM Low Power Dual-Port RAM IC |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | BGA | CABGA | CABGA | CABGA | BGA | BGA |
| 包装说明 | 0.50 MM PITCH, GREEN, BGA-100 | 0.5 MM PITCH, GREEN, BGA-100 | 0.5 MM PITCH, GREEN, BGA-100 | 0.5 MM PITCH, GREEN, BGA-100 | 0.50 MM PITCH, GREEN, BGA-100 | BGA, BGA100,10X10,20 |
| 针数 | 100 | 100 | 100 | 100 | 100 | 100 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 65 ns | 65 ns | 65 ns | 90 ns | 65 ns | 65 ns |
| 其他特性 | IT CAN ALSO OPERATES WITH 2.5 AND 3 VOLT | IT CAN OPERATE ALSO 2.5 TO 3 VOLT | IT CAN OPERATE ALSO 2.5 TO 3 VOLT | IT CAN OPERATE ALSO 2.5 TO 3 VOLT | IT CAN OPERATE ALSO 2.5 TO 3 VOLT | IT CAN OPERATE ALSO 2.5 TO 3 VOLT |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | S-PBGA-B100 | S-PBGA-B100 | S-PBGA-B100 | S-PBGA-B100 | S-PBGA-B100 | S-PBGA-B100 |
| JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 |
| 内存密度 | 262144 bit | 65536 bit | 262144 bit | 131072 bit | 65536 bit | 131072 bit |
| 内存集成电路类型 | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 100 | 100 | 100 | 100 | 100 | 100 |
| 字数 | 16384 words | 4096 words | 16384 words | 8192 words | 4096 words | 8192 words |
| 字数代码 | 16000 | 4000 | 16000 | 8000 | 4000 | 8000 |
| 工作模式 | ASYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 16KX16 | 4KX16 | 16KX16 | 8KX16 | 4KX16 | 8KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
| 封装等效代码 | BGA100,10X10,20 | BGA100,10X10,20 | BGA100,10X10,20 | BGA100,10X10,20 | BGA100,10X10,20 | BGA100,10X10,20 |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 |
| 电源 | 1.8/3 V | 1.8/3 V | 1.8/3 V | 1.8/3 V | 1.8/3 V | 1.8/3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.000008 A | 0.000008 A | 0.000008 A | 0.000008 A | 0.000008 A | 0.000008 A |
| 最大压摆率 | 0.07 mA | 0.07 mA | 0.07 mA | 0.06 mA | 0.07 mA | 0.07 mA |
| 最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
| Base Number Matches | 1 | 1 | - | - | 1 | 1 |
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