STGB30H60DF, STGF30H60DF,
STGP30H60DF, STGW30H60DF
600 V, 30 A high speed
trench gate field-stop IGBT
Datasheet
-
production data
TAB
Features
•
High speed switching
3
1
3
1
2
•
Tight parameters distribution
•
Safe paralleling
•
Low thermal resistance
•
Short circuit rated
•
Ultrafast soft recovery antiparallel diode
D²PAK
TAB
TO-220FP
Applications
3
1
2
2
1
3
•
Inverter
•
UPS
•
PFC
TO-220
TO-247
Figure 1. Internal schematic diagram
C (2, TAB)
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V
CE(sat)
temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
G (1)
E (3)
Table 1. Device summary
Order codes
STGB30H60DF
STGF30H60DF
STGP30H60DF
STGW30H60DF
Marking
GB30H60DF
GF30H60DF
GP30H60DF
GW30H60DF
Package
D²PAK
TO-220FP
TO-220
TO-247
Tube
Packaging
Tape and reel
March 2013
This is information on a product in full production.
DocID022363 Rev 3
1/24
www.st.com
24
Contents
STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
.......................... 7
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2/24
DocID022363 Rev 3
STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
CES
I
C
I
C
I
CP (2)
V
GE
I
F
I
F
I
FP (2)
P
TOT
T
STG
T
J
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature
60
30
120
260
- 55 to 150
°C
- 40 to 175
60
30
120
±20
60
(1)
30
(1)
120
(1)
37
(1)
TO-220
D²PAK
TO-247
600
60
(1)
30
(1)
120
(1)
TO-220FP
Unit
V
A
A
A
V
A
A
A
W
1. Limited by maximum junction temperature
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Table 3. Thermal data
Value
Symbol
Parameter
D²PAK
R
thJC
R
thJC
R
thJA
Thermal resistance junction-
case IGBT
Thermal resistance junction-
case diode
Thermal resistance junction-
ambient
0.58
2.5
TO-220FP TO-220
4
5.6
62.5
TO-247
°C/W
°C/W
50
°C/W
Unit
0.58
2.5
DocID022363 Rev 3
3/24
Electrical characteristics
STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static
Symbol
V
(BR)CES
Parameter
Test condition
Min.
600
2.0
2.4
5.0
6.0
7.0
25
250
2.4
Typ.
Max.
Unit
V
V
V
V
µA
nA
Collector-emitter breakdown voltage
I
C
= 2 mA
(V
GE
= 0)
V
GE
= 15 V, I
C
= 30 A
Collector-emitter saturation voltage
V
CE(sat)
V
GE(th)
I
CES
I
GES
V
GE
= 15 V, I
C
= 30 A
T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1 mA
V
CE
= 600 V
V
GE
= ± 20 V
Gate threshold voltage
Collector cut-off current (V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Table 5. Dynamic
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CC
= 400 V, I
C
= 30 A,
V
GE
= 15 V
-
-
-
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-
Test condition
Min.
Typ.
3600
130
65
105
30
35
-
-
-
-
Max.
Unit
pF
pF
pF
nC
nC
nC
4/24
DocID022363 Rev 3
STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
t
sc
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Short circuit withstand time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω,
V
GE
= 15 V
T
J
= 175 °C
V
CC
≤
360 V, V
GE
= 15 V
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω,
V
GE
= 15 V
-
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω,
V
GE
= 15 V
T
J
= 175 °C
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω,
V
GE
= 15 V
-
Test condition
Min.
Typ.
50
15
1600
47
-
17
1400
20
160
60
22
-
146
88
3
6
-
-
-
-
-
Max.
Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
µs
Table 7. Switching energy (inductive load)
Symbol
Eon
(1)
E
off (2)
E
ts
Eon
(1)
E
off (2)
E
ts
1.
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test condition
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω,
V
GE
= 15 V
V
CE
= 400 V, I
C
= 230 A,
R
G
= 10
Ω,
V
GE
= 15 V
T
J
= 175 °C
Min.
-
Typ.
0.35
0.40
0.75
0.61
0.84
1.45
Max.
-
Unit
mJ
mJ
mJ
mJ
mJ
mJ
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
DocID022363 Rev 3
5/24
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