DMN6040SVTQ
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
R
DS(ON)
Max
44mΩ @ V
GS
= 10V
60V
60mΩ @ V
GS
= 4.5V
4.3A
I
D
T
A
= +25°C
5.0A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
TSOT26
D
1
D
2
G
3
6
5
4
D
D
S
Equivalent Circuit
Top View
Top View
Pin Configuration
Ordering Information
(Note 5)
Part Number
DMN6040SVTQ-7
DMN6040SVTQ-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
32D
32D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
…
…
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
Jun
6
2020
H
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
1 of 8
www.diodes.com
December 2015
© Diodes Incorporated
DMN6040SVTQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= 10V
Steady
State
t<10s
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
I
AR
E
AR
Value
60
±20
5.0
4.0
6.3
5.0
4.3
3.4
5.4
4.3
2.1
30
14.2
10
Units
V
V
A
A
A
A
A
A
A
mJ
Continuous Drain Current (Note 7) V
GS
= 5V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Notes:
Symbol
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.2
0.75
106
69
1.8
1.1
68
44
20
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
2 of 8
www.diodes.com
December 2015
© Diodes Incorporated
DMN6040SVTQ
100
100
Single Pulse
R
JA
= 72
C/W
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
P
W
= 10µs
P
(PK)
, PEAK TRANSIENT POIWER (W)
80
ADVANCE INFORMATION
60
I
D
, DRAIN CURRENT (A)
10
R
DS(on)
Limited
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
40
0.1
20
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA(t)
= r
(t)
* R
JA
R
JA
= 72
C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
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www.diodes.com
December 2015
© Diodes Incorporated
DMN6040SVTQ
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
FS
|
V
SD
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
60
1
Typ
30
35
4.5
0.7
1,287
57
44
1.2
22.4
10.4
4.9
3.0
6.6
8.1
20.1
4.0
18
11.9
Max
100
100
3
44
60
1.2
Unit
V
nA
nA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4.3A
V
GS
= 4.5V, I
D
= 4A
V
DS
= 10V, I
D
= 4.3A
V
GS
= 0V, I
S
= 1A
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 30V, I
D
= 4.3A
pF
Ω
nC
ns
V
GS
= 10V, V
DD
= 30V, R
G
= 6Ω,
I
D
= 4.3A
I
S
= 4.3A, dI/dt = 100A/μs
I
S
= 4.3A, dI/dt = 100A/μs
ns
nC
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
4 of 8
www.diodes.com
December 2015
© Diodes Incorporated
DMN6040SVTQ
20
20
V
DS
= 5.0V
16
16
I
D
, DRAIN CURRENT (A)
ADVANCE INFORMATION
I
D
, DRAIN CURRENT (A)
12
12
8
8
T
A
= 150°C
4
4
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0
0
T
A
= -55°C
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
3.0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE
Fig. 5 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.09
0.08
0.07
0.06
0.05
0.04
0.03
V
GS
= 10V
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.10
0.10
0.08
0.06
I
D
= 3.5A
I
D
= 4.5A
0.04
0.02
0.01
0
0
4
8
12
16
I
D
, DRAIN-SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0.02
0
0
1
2
3
4
5
6
7
8
9
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 7 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
8
12
16
I
D
, DRAIN CURRENT
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
4
20
T
A
= 25°C
T
A
= 125°C
V
GS
= 4.5V
2.4
2.2
V
GS
= 10V
I
D
= 10A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T
A
= 150°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
T
A
= 85°C
V
GS
= 4.5V
I
D
= 5A
T
A
= -55°C
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 9 On-Resistance Variation with Temperature
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
5 of 8
www.diodes.com
December 2015
© Diodes Incorporated
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