VS-12TTS08SPbF Series
www.vishay.com
Vishay Semiconductors
Thyristor Surface Mount, Phase Control SCR, 8 A
4
2, 4
Anode
FEATURES
• Meets MSL level 1, per
LF maximum peak of 260 °C
• Designed
and
®
-JESD 47
JEDEC
qualified
J-STD-020,
according
2
3
1
TO-263AB (D
2
PAK)
1
Cathode
3
Gate
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-263AB (D
2
PAK)
Single SCR
8A
800 V
1.2 V
15 mA
-40 to +125 °C
• Input rectification and crow-bar (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-12TTS08SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
Range
8 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
8
A
12.5
800
110
1.2
150
100
-40 to +125
V
A
V
V/μs
A/μs
°C
UNITS
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
I
RRM
/I
DRM
AT 125 °C
mA
1.0
Revision: 08-Jul-15
Document Number: 94499
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12TTS08SPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak one-cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Typical holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
TEST CONDITIONS
T
C
= 108 °C, 180° conduction, half sine wave
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
t = 0.1 ms to 10 ms, no voltage reapplied, T
J
= 125 °C
8 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
VALUES
8
12.5
A
95
110
45
64
640
1.2
16.2
0.87
0.05
V
R
= Rated V
RRM
/V
DRM
1.0
mA
30
50
150
100
V/μs
A/μs
A
2
s
V
m
V
A
2
s
UNITS
I
2
t
Anode supply = 6 V, resistive load, initial I
T
= 1 A,
T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
- k = Open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 65 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 65 °C
Maximum required DC gate voltage to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
W
2.0
1.5
10
20
15
10
1.2
1
V
0.7
0.2
0.1
mA
mA
A
V
UNITS
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.8
3
100
μs
UNITS
Revision: 08-Jul-15
Document Number: 94499
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12TTS08SPbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
0.07
minimum
Mounting torque
maximum
Marking device
Case style D
2
PAK (SMD-220)
12 (10)
6 (5)
oz.
kgf
cm
(lbf
in)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +125
1.5
62
0.5
2
g
°C/W
UNITS
°C
12TTS08S
Maximum Allowable Case T
emperature (°C)
12T 08
TS
R
thJC
(DC) = 1.5 K/ W
120
Maximum Average On-state Power Loss (W)
125
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
Average On-state Current (A)
Conduction Angle
180°
120°
90°
60°
30°
R Limit
MS
115
Conduc tion Angle
110
30°
105
60°
90°
120°
180°
100
0
2
4
6
8
10
Average On-state Current (A)
12T S
T 08
T
J
= 125°C
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
12T S
T 08
R
thJC
(DC) = 1.5 K/ W
Maximum Average On-state Power Loss (W)
125
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
Average On-state Current (A)
DC
180°
120°
90°
60°
30°
R Limit
MS
Conduction Period
120
115
Conduction Period
110
30°
60°
90°
120°
180°
DC
12
14
105
12T S
T 08
T
J
= 125°C
100
0
2
4
6
8
10
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 08-Jul-15
Document Number: 94499
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12TTS08SPbF Series
www.vishay.com
110
100
Peak Half
Sine
Wave
Forward Current (A)
90
80
70
60
50
40
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
VS-12TTS08
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
120
110
Peak Half
Sine
Wave
Forward Current (A)
100
90
80
70
60
50
40
0.01
VS-12TTS08
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
Vishay Semiconductors
0.1
1
Pulse Train Duration (s)
10
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
12T S
T 08
100
10
T
J
= 25°C
T
J
= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(°C/W)
10
S
teady S
tate Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
ingle Pulse
12T S
T 08
0.01
0.0001
0.1
0.001
0.01
S
quare Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 08-Jul-15
Document Number: 94499
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12TTS08SPbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
12
2
-
-
-
-
-
-
-
-
T
3
T
4
S
5
08
6
S
7
TRL PbF
8
9
Vishay Semiconductors product
Current rating (12.5 A)
Circuit configuration:
T = single thyristor
Package:
T = TO-220AC
Type of silicon:
S = standard recovery rectifier
Voltage rating (08 = 800 V)
S = TO-220 D
2
PAK (SMD-220) version
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
PbF = lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-12TTS08SPbF
VS-12TTS08STRRPbF
VS-12TTS08STRLPbF
QUANTITY PER T/R
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Revision: 08-Jul-15
Document Number: 94499
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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