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NSS20501UW3TBG

产品描述Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) XTR
产品类别分立半导体    晶体管   
文件大小101KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS20501UW3TBG概述

Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) XTR

NSS20501UW3TBG规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
针数3
制造商包装代码506AU
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time6 weeks
最大集电极电流 (IC)5 A
配置Single
最小直流电流增益 (hFE)180
JESD-609代码e3
湿度敏感等级1
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)1.5 W
表面贴装YES
端子面层Tin (Sn)
标称过渡频率 (fT)150 MHz

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NSS20501UW3
20 V, 7.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
http://onsemi.com
20 VOLTS, 7.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
31 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
20
20
6.0
5.0
7.0
Unit
Vdc
Vdc
Vdc
Adc
A
2
1
WDFN3
CASE 506AU
MARKING DIAGRAM
VD M
G
G
1
VD = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #3
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
qJL
(Note 2)
T
J
, T
stg
Max
875
7.0
143
1.5
11.8
85
23
−55
to
+150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
°C
ORDERING INFORMATION
Device
NSS20501UW3T2G
NSS20501UW3TBG
Package
WDFN3
(Pb−Free)
WDFN3
(Pb−Free)
Shipping
3000/
Tape & Reel
3000/
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 1 oz copper traces.
2. FR−4 @ 500 mm
2
, 1 oz copper traces.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
November, 2012
Rev. 3
1
Publication Order Number:
NSS20501UW3/D
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