Operating Case Temperature Range (Note 1) ....0NC to +70NC
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -40NC to +150NC
Soldering Temperature (reflow) ......................................+260NC
MAX2079
Note 1:
T
C
is the temperature on the bump of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACkAGe THeRMAL CHARACTeRISTICS (Note 2)
Junction-to-Ambient Thermal Resistance (q
JA
) ..............25°C/W
Junction-to-Case Thermal Resistance (q
JC
) ..................7.7°C/W
Note 2:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
OCTAL ULTRASOUND FRONT-eND SPeCIFICATIONS
DC eLeCTRICAL CHARACTeRISTICS—VGA MODe (CWD BeAMFORMeR OFF)
(V
REF
= 2.5V, V
CC3
= 3.13V to 3.47V, V
CC5
= 4.5V to 5.25V, V
AVDD
= V
OVDD
= 1.7V to 1.9V, T
A
= 0NC to +70NC, V
GND
= 0V, SHDN = 0,
CWD = 0, LOON = 0, f
RF
= 5MHz, 50mV
P-P
, ADC f
CLK
= 50Msps, digital HPF set to 60/64, two poles, 15/16 digital gain, V
GC+
-
V
GC-
= -3V (minimum gain), high LNA gain. Typical values are at V
REF
= 2.5V, V
CC3
= 3.3V, V
CC5
= 4.75V, V
AVDD
= V
OVDD
= 1.8V,
V
GC+
- V
GC-
= 0V, T
A
= +25NC, unless otherwise noted.) (Note 3)
PARAMeTeR
3.3V Supply Voltage
5V Supply Voltage
1.8V Supply Voltage
External Reference Voltage
Range
External Reference Current
3V Supply Current per Channel
5V Supply Current per Channel
1.8V Supply Current
per Channel
DC Power per Channel
Differential Analog Control
Voltage Range
Maxim Integrated
SYMBOL
V
CC3
V
CC5
V
CC1.8
V
REF
V
CC3
pins
V
CC5
pins
CONDITIONS
MIN
3.13
4.5
1.7
2.475
TYP
3.3
4.75
1.8
MAx
3.47
5.25
1.9
2.525
UNITS
V
V
V
V
FA
AVDD and OVDD pins
(Note 4)
Total current into the V
REF
pin
Total I divided by 8, V
GC+
- V
GC-
= 0.4V
Total I divided by 8
Total I divided by 8, AVDD + OVDD
Total I divided by 8, AVDD
Total I divided by 8, OVDD
V
GC+
- V
GC-
= -0.4V
5
9.5
6.4
32
20
12
120
Q3
16
9
37.9
22.8
15.1
I
CC3
I
CC5
I
CC1.8
P_NM
mA
mA
mA
mA
mA
mW
V
2
VGAIN_RANG V
GC+
- V
GC-
Low-Power, High-Performance, Fully Integrated
Octal Ultrasound Receiver (Octal LNA, VGA,
AAF, ADC, and CWD Beamformer)
MAX2079
DC eLeCTRICAL CHARACTeRISTICS—VGA MODe (CWD BeAMFORMeR OFF) (continued)
(V
REF
= 2.5V, V
CC3
= 3.13V to 3.47V, V
CC5
= 4.5V to 5.25V, V
AVDD
= V
OVDD
= 1.7V to 1.9V, T
A
= 0NC to +70NC, V
GND
= 0V, SHDN = 0,
CWD = 0, LOON = 0, f
RF
= 5MHz, 50mV
P-P
, ADC f
CLK
= 50Msps, digital HPF set to 60/64, two poles, 15/16 digital gain, V
GC+
-
V
GC-
= -3V (minimum gain), high LNA gain. Typical values are at V
REF
= 2.5V, V
CC3
= 3.3V, V
CC5
= 4.75V, V
AVDD
= V
OVDD
= 1.8V,
V
GC+
- V
GC-
= 0V, T
A
= +25NC, unless otherwise noted.) (Note 3)
PARAMeTeR
5V Supply Nap Current
3V Supply Nap Current
1.8V Supply Nap Current
5V Supply Power-Down Current I_PD_5V_TOT
3V Supply Power-Down Current I_PD_3V_TOT
1.8V Supply Power-Down
Current
Common-Mode Voltage for
Differential Analog Control
Source/Sink Current for Gain
Control Pins
SYMBOL
CONDITIONS
MIN
TYP
30
0.035
40
1
1
0.38
1.65
±5%
±1.6
MAx
UNITS
mA
mA
mA
FA
FA
mA
V
µA
I_NP_5V_TOT SHDN = 1, nap mode (all 8 channels)
I_NP_3V_TOT SHDN = 1, nap mode (all 8 channels)
SHDN = 1, nap mode (all 8 channels)
SHDN = 1, power-down mode
(all 8 channels)
SHDN = 1, power-down mode
(all 8 channels)
SHDN = 1, power-down mode
(all 8 channels)
VGAIN_COMM (V
GC+
- V
GC-
)/2
I_ACONTROL Per pin
AC eLeCTRICAL CHARACTeRISTICS—VGA MODe (CWD BeAMFORMeR OFF)
(V
REF
= 2.5V, V
CC3
= 3.13V to 3.47V, V
CC5
= 4.5V to 5.25V, V
AVDD
= V
OVDD
= 1.7V to 1.9V, T
A
= 0NC to +70NC, V
GND
= 0V, SHDN = 0,
CWD = 0, LOON = 0, f
RF
= 5MHz, 50mV
P-P
, ADC f
CLK
= 50Msps, digital HPF set to 60/64, two poles, 15/16 digital gain, V
GC+
-
V
GC-
= -3V (minimum gain), high LNA gain. Typical values are at V
REF
= 2.5V, V
CC3
= 3.3V, V
CC5
= 4.75V, V
AVDD
= V
OVDD
= 1.8V,
V
GC+
- V
GC
- = 0V, T
A
= +25NC, unless otherwise noted.) (Note 3)
PARAMeTeR
ADC Bits
Minimum ADC Sample Rate
Maximum ADC Sample Rate
Mode-Select Response Time
(Note 5)
CWD stepped from 0 to 1, DC stable within 10%
CWD stepped from 1 to 0, DC stable within 10%
50I mode, f
RF
= 2MHz
100I mode, f
RF
= 2MHz
200I mode, f
RF
= 2MHz
1kI mode, f
RF
= 2MHz
R
S
= R
IN
= 50I, V
GC+
- V
GC-
= +3V
R
S
= R
IN
= 100I, V
GC+
- V
GC-
= +3V
R
S
= R
IN
= 200I, V
GC+
- V
GC-
= +3V
R
S
= R
IN
= 1000I, V
GC+
- V
GC-
= +3V
R
S
= R
IN
= 200I, V
GC+
- V
GC-
= +3V
50
1
1
50
100
200
1000
4.8
3.8
2.8
2.5
3.8
dB
3
CONDITIONS
MIN
TYP
12
25
MAx
UNITS
Bits
Msps
Msps
Fs
Input Impedance
I
Noise Figure (High LNA Gain)
dB
Noise Figure (Low LNA Gain)
Maxim Integrated
Low-Power, High-Performance, Fully Integrated
Octal Ultrasound Receiver (Octal LNA, VGA,
AAF, ADC, and CWD Beamformer)
MAX2079
AC eLeCTRICAL CHARACTeRISTICS—VGA MODe (CWD BeAMFORMeR OFF) (continued)
(V
REF
= 2.5V, V
CC3
= 3.13V to 3.47V, V
CC5
= 4.5V to 5.25V, V
AVDD
= V
OVDD
= 1.7V to 1.9V, T
A
= 0NC to +70NC, V
GND
= 0V, SHDN = 0,
CWD = 0, LOON = 0, f
RF
= 5MHz, 50mV
P-P
, ADC f
CLK
= 50Msps, digital HPF set to 60/64, two poles, 15/16 digital gain, V
GC+
-
V
GC-
= -3V (minimum gain), high LNA gain. Typical values are at V
REF
= 2.5V, V
CC3
= 3.3V, V
CC5
= 4.75V, V
AVDD
= V
OVDD
= 1.8V,
V
GC+
- V
GC
- = 0V, T
A
= +25NC, unless otherwise noted.) (Note 3)
PARAMeTeR
CONDITIONS
No input signal, ratio of 8-channel noise power to
single-channel noise power
5MHz signal applied to all 8 channels, V
GC+
- V
GC-
= 0V,
f
RF
= 5MHz at -3dBFS, ratio of 8-channel noise power to
single-channel noise power
MIN
TYP
9.0
dB
8.5
12.5
18.5
44.7
5.9
40.4
1.4
38.8
9MHz setting
AA Filter 3dB Corner Frequency
10MHz setting
15MHz setting
18MHz setting
AA Filter 3dB Corner Frequency
Accuracy
Digital Highpass Filter 3dB
Corner Frequency
Clamp Level
2 poles, coefficients R1 = R2 = 63/64, f
CLK
= 50Msps
2 poles, coefficients R1 = R2 = 54/64, f
CLK
= 50Msps
Clamp on (V
P-P
on AAF Output/ADC Input, digital HPF
bypassed)
-1.6
LNA = high gain, V
GC+
- V
GC-
= -3V (VGA = min gain),
gain ratio with 330mV
P-P
/50mV
P-P
input tones
LNA = low gain, V
GC+
- V
GC-
= -3V (VGA = min gain),
gain ratio with 600mV
P-P
/50mV
P-P
input tones
Gain step up (V
IN
= 5mV
P-P
, V
GC+
- V
GC-
changed from
-3V to +3V, settling time is measured within 1dB final value)
Gain step down (V
IN
= 5mV
P-P
, V
GC+
- V
GC-
changed from
-3V to +3V, settling time is measured within 1dB final value)
Over drive is
Q10mA
in clamping diodes, V
GC+
- V
GC-
=
1.0V (gain = 30dB), 16 pulses at 5MHz, repetition rate
20kHz; offset is measured at output when RF duty cycle is off
V
OUT_
= -1dBFS, V
IN
= 200mV
P-P
, f
RF
= 5MHz at -1dBFS,
anti-alias filter = 9MHz, 50Msps sample rate
9
10
15
18
Q10
0.185
1.736
92
Q0.5
0.7
dB
0.9
0.8
Fs
1.8
+1.6
%
MHz
%FS
dB
MHz
dB
dB
dB
dB
dB
dB
dB
MAx
UNITS
8-Channel Correlated Noise
Power
LNA Gain (Low LNA Gain)
LNA Gain (High LNA Gain)
Maximum Gain (High LNA Gain) V
GC+
- V
GC-
= +3V (max gain), LNA input to ADC Input
Minimum Gain (High LNA Gain) V
GC+
- V
GC-
= -3V (min gain), LNA input to ADC Input
Maximum Gain (Low LNA Gain) V
GC+
- V
GC-
= +3V (max gain), LNA input to ADC Input
Minimum Gain (Low LNA Gain) V
GC+
- V
GC-
= = -3V (min gain), LNA input to ADC input
Gain Range
Device-to-Device Gain Matching T
A
= +25NC, V
GC+
- V
GC-
= -3V to +3V (Note 6)
Input Gain Compression
VGA Gain Response Time
VGA Output Offset Under
Pulsed Overload
Signal-to-Noise Over ADC
Nyquist Band (25MHz)
Maxim Integrated
< 3.3
67
%FS
dBFS
4
Low-Power, High-Performance, Fully Integrated
Octal Ultrasound Receiver (Octal LNA, VGA,
AAF, ADC, and CWD Beamformer)
MAX2079
AC eLeCTRICAL CHARACTeRISTICS—VGA MODe (CWD BeAMFORMeR OFF) (continued)
(V
REF
= 2.5V, V
CC3
= 3.13V to 3.47V, V
CC5
= 4.5V to 5.25V, V
AVDD
= V
OVDD
= 1.7V to 1.9V, T
A
= 0NC to +70NC, V
GND
= 0V, SHDN = 0,
CWD = 0, LOON = 0, f
RF
= 5MHz, 50mV
P-P
, ADC f
CLK
= 50Msps, digital HPF set to 60/64, two poles, 15/16 digital gain, V
GC+
-
V
GC-
= -3V (minimum gain), high LNA gain. Typical values are at V
REF
= 2.5V, V
CC3
= 3.3V, V
CC5
= 4.75V, V
AVDD
= V
OVDD
= 1.8V,
V
GC+
- V
GC
- = 0V, T
A
= +25NC, unless otherwise noted.) (Note 3)
PARAMeTeR
Signal-to-Noise Over 2MHz
Bandwidth
Near-Carrier Signal-to-Noise
Ratio
Second Harmonic (HD2)
IM3 Distortion
CONDITIONS
V
OUT_
= -1dBFS, V
IN
= 200mV
P-P
, f
RF
= 5MHz at -1dBFS,
anti-alias filter = 9MHz, 50Msps sample rate
V
GC+
- V
GC-
= 0V (gain = 22dB), f
RF
= 5.3MHz at
-0.5dBFS, measured at 1kHz from f
RF
, 50Msps sample rate
V
IN
= 50mV
P-P
, f
RF
= 2MHz, ADC out = -3dBFS
V
IN
= 50mV
P-P
, f
RF
= 5MHz, ADC out = -3dBFS
V
IN
= 50mV
P-P
, f
RF1
= 5MHz, f
RF2
= 5.01MHz
ADC out = -3dBFS (Note 7)
MIN
TYP
76
-137
-71
-70
-54
MAx
UNITS
dBFS
dBFS/Hz
dBc
dBc
V
-V
= 0.6V (gain = 28dB), f
RF
= 5MHz,
Nap Mode Power-Up Response
GC+ GC-
ADC out = -3dBFS, settled with in 1dB from transition on
Time
SHDN pin (includes ADC)
Nap Mode Power-Down
Response Time
Sleep Mode Power-Up
Response Time
Sleep Mode Power-Down
Response Time
Adjacent-Channel Crosstalk
Alternate-Channel Crosstalk
Phase Matching Between
Channels
To reach DC current target
Q10%,
on V
CC5
, V
CC3
, AVDD,
OVDD from transition on SHDN pin
V
GC+
- V
GC-
= 0.6V (gain = 28dB), f
RF
= 5MHz,
V
OUT_
= -1dBFS, settled within 1dB from transition on
SHDN
V
GC+
- V
GC-
= 0.6V (gain = 28dB), f
RF
= 5MHz, DC power
reaches 1mW/channel, from transition on SHDN
(includes ADC)
V
OUT_
= -3dBFS, f
RF
= 5MHz, V
GC+
- V
GC-
= 0.6V
(gain = 28dB)
V
OUT_
= -3dBFS, f
RF
= 5MHz, V
GC+
- V
GC-
= 0.6V
(gain = 28dB)
V
GC+
-V
GC-
= 0.6V (gain = 28dB), f
RF
= 5MHz,
V
OUT_
= -3dBFS
2
Fs
4
Fs
2
ms
4
ms
-60
-80
Q1.2
dBc
dBc
Degrees
DC eLeCTRICAL CHARACTeRISTICS—CWD MODe (VGA, AAF, AND ADC OFF)
(V
REF
= 2.5V, V
CC3
= 3.13V to 3.47V, V
CC5
= 4.5V to 5.25V, V
AVDD
= V
OVDD
= 1.7V to 1.9V, T
A
= 0NC to +70NC, V
GND
= 0V,
SHDN = 0, CWD = 1, LOON = 1, R
IN
= 200I, high LNA gain, CI+, CI-, CQ+, CQ- pulled up to +11V through four separate 0.1%
120I resistors. No RF signals applied. Typical values are at V
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
