STB8N65M5, STD8N65M5, STF8N65M5,
STI8N65M5, STP8N65M5, STU8N65M5
N-channel 650 V, 0.56
Ω
typ., 7 A MDmesh™ V Power MOSFET
in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages
Datasheet — production data
Features
TAB
TAB
Type
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
■
■
■
■
■
■
V
DSS
@
T
Jmax
R
DS(on)
max.
I
D
P
TOT
3
3
1
1
2
710 V
< 0.6
Ω
7A
70 W
70 W
25 W
70 W
70 W
70 W
DPAK
3
1
2
TO-220FP
TO-220
TAB
TAB
TAB
3
Worldwide best R
DS(on)
* area
Higher V
DSS
rating
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Figure 1.
I²PAK
3
12
1
1
3
2
D²PAK
IPAK
Internal schematic diagram
Applications
■
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
Order codes
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
Device summary
Marking
Package
Packaging
8N65M5
Tape and reel
D²PAK
Tape and reel
DPAK
Tube
TO-220FP
Tube
I²PAK
Tube
TO-220
Tube
IPAK
October 2012
This is information on a product in full production.
Doc ID 16531 Rev 5
1/26
www.st.com
26
Contents
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
2/26
Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220
D²PAK
I²PAK
V
GS
I
D
I
D
I
DM (2)
P
TOT
I
AR
E
AS
dv/dt
(3)
V
ISO
T
stg
T
j
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by T
JMAX
)
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
Storage temperature
Max. operating junction temperature
-55 to 150
150
7
4.4
28
70
2
120
15
2500
IPAK
DPAK,
± 25
7
(1)
4.4
(1)
28
(1)
25
Unit
TO-220FP
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area.
3. I
SD
≤
7 A, di/dt
≤
400 A/µs, V
DD
≤
400 V, V
DS(peak)
< V
(BR)DSS
.
Table 3.
Symbol
Thermal data
Value
Parameter
DPAK IPAK TO-220 I²PAK D²PAK TO-220FP
Thermal resistance
junction-case max
Thermal resistance
junction-ambient max
Thermal resistance
junction-pcb max
50
100
Unit
R
thj-case
R
thj-amb
R
thj-pcb(1)
1.79
62.5
30
5
62.5
°C/W
°C/W
°C/W
1. When mounted on 1 inch² FR-4 board, 2oz Cu.
Doc ID 16531 Rev 5
3/26
Electrical characteristics
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on
On /off states
Parameter
Drain-source
breakdown voltage
Test conditions
I
D
= 1 mA, V
GS
= 0
Min.
650
1
100
±100
3
4
0.56
5
0.60
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Zero gate voltage
V
DS
= 650 V
drain current (V
GS
= 0) V
DS
= 650 V, T
C
=125 °C
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-
V
GS
= 10 V, I
D
= 3.5 A
resistance
Table 5.
Symbol
C
iss
C
oss
C
rss
(1)
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance energy
related
Equivalent output
capacitance time
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
Typ.
690
18
2
Max.
Unit
pF
pF
pF
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
-
-
C
o(er)
V
GS
= 0, V
DS
= 0 to 520 V
-
17
-
pF
C
o(tr)
(2)
V
GS
= 0, V
DS
= 0 to 520 V
-
52
-
pF
R
G
Q
g
Q
gs
Q
gd
f = 1 MHz open drain
V
DD
= 520 V, I
D
= 3.5 A,
V
GS
= 10 V
(see
Figure 19)
2
4
15
3.6
6
6
Ω
nC
nC
nC
-
-
1. C
o(er)
is a constant capacitance value that gives the same stored energy as C
oss
while V
DS
is rising from 0
to 80% V
DSS
2. C
o(tr)
is a constant capacitance value that gives the same charging time as C
oss
while V
DS
is rising from 0
to 80% V
DSS
4/26
Doc ID 16531 Rev 5
STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Electrical characteristics
Table 6.
Symbol
t
d(off)
t
r(V)
t
c(off)
t
f(i)
Switching times
Parameter
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
V
DD
= 400 V, I
D
= 4A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 20)
(see
Figure 23)
Min.
Typ.
50
14
20
11
Max. Unit
ns
ns
ns
ns
-
-
Table 7.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 7 A, V
GS
= 0
I
SD
= 7 A, di/dt = 100 A/µs
V
DD
= 100 V
(see
Figure 20)
I
SD
= 7 A, di/dt = 100 A/µs
V
DD
= 100 V, T
j
= 150 °C
(see
Figure 20)
Test conditions
Min.
-
-
-
200
1.6
16
263
1.9
15
Typ.
Max. Unit
7
28
1.5
A
A
V
ns
µC
A
ns
µC
A
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
-
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 16531 Rev 5
5/26
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