STD16NF25, STF16NF25, STP16NF25
N-channel 250 V, 0.195
Ω,
14 A STripFET™ II Power MOSFET in
DPAK, TO-220FP and TO-220 packages
Datasheet
−
production data
Features
TAB
TAB
Order codes
3
3
1
2
V
DS
250 V
R
DS(on) max
0.235
Ω
I
D
14 A
14 A
(1)
14 A
P
TOT
100 W
25 W
100 W
1
STD16NF25
STF16NF25
STP16NF25
DPAK
TO-220
1. Limited by maximum junction temperature
3
1
2
•
Exceptional dv/dt capability
•
100% avalanche tested
•
Application oriented characterization
TO-220FP
Figure 1. Internal schematic diagram
Applications
•
Switching applications
Description
These Power MOSFETs have been developed
using STMicroelectronics’ unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge. This
renders the devices suitable for use as primary
switch in advanced high-efficiency isolated DC-
DC converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
Table 1. Device summary
Order codes
STD16NF25
STF16NF25
STP16NF25
16NF25
Marking
Package
DPAK
TO-220FP
Tube
TO-220
Packaging
Tape and reel
March 2013
This is information on a product in full production.
DocID14007 Rev 4
1/21
www.st.com
21
Contents
STD16NF25, STF16NF25, STP16NF25
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID14007 Rev 4
STD16NF25, STF16NF25, STP16NF25
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
DPAK
TO-220
V
DS
V
GS
I
D
I
D
I
DM(2)
P
TOT
dv/dt
(3)
V
ISO
T
stg
T
j
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s;T
C
= 25 °C)
Storage temperature
-55 to 150
Max. operating junction temperature
°C
14
8.8
56
85
0.68
15
2500
250
± 20
14
(1)
8.8
(1)
56
(1)
25
0.2
Unit
TO-220FP
V
V
A
A
A
W
W/°C
V/ns
V
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area.
3. I
SD
≤
13A, di/dt
≤
300A/µs, V
DD
≤
80% V
(BR)DSS
, Tj
≤
T
JMAX
Table 3. Thermal data
Value
Symbol
R
thj-case
R
thj-pcb
R
thj-amb
Parameter
TO-220
Thermal resistance junction-case max
Thermal resistance junction to pcb max
Thermal resistance junction-ambient max
62.5
DPAK
TO-220FP
5
50
62.5
°C/W
°C/W
°C/W
1.47
Unit
Table 4. Avalanche characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j max
)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
AR
= 13 A, V
DD
= 50 V)
Value
13
100
Unit
A
mJ
DocID14007 Rev 4
3/21
Electrical characteristics
STD16NF25, STF16NF25, STP16NF25
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V
(BR)DSS
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current
Gate-body leakage
current
Test conditions
V
GS
= 0, I
D
= 1 mA
V
GS
= 0, V
DS
= 250 V
V
GS
= 0,
V
DS
= 250 V, T
C
=125 °C
V
DS
= 0, V
GS
= ±20 V
2
3
0.195
Min.
250
1
10
±100
4
0.235
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-
V
GS
= 10 V, I
D
= 6.5 A
resistance
Table 6. Dynamic
Symbol
C
iss
C
oss
C
rss
C
oss eq.(1)
R
G
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
Test conditions
Min.
-
-
-
V
DS
= 0 to 200 V, V
GS
= 0
f = 1 MHz, I
D
= 0
V
DD
= 200 V, I
D
= 13 A,
V
GS
= 10 V
(see
Figure 19)
-
-
-
-
-
Typ.
680
125
20
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
Ω
nC
nC
nC
48
2.1
18
3
8
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/21
DocID14007 Rev 4
STD16NF25, STF16NF25, STP16NF25
Electrical characteristics
Table 7. Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 125 V, I
D
= 6.5 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 18)
Test conditions
Min.
-
-
-
-
Typ.
9
17
35
17
Max. Unit
-
-
-
-
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
I
SD
I
SDM (1)
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 13 A, di/dt = 100 A/µs
V
DD
= 60 V, T
J
=150 °C
(see
Figure 20)
I
SD
= 13 A, di/dt = 100 A/µs
V
DD
= 60 V (see
Figure 20)
I
SD
= 13 A, V
GS
= 0
Test conditions
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
133
651
10
157
895
11
Max. Unit
14
56
1.6
A
A
V
ns
nC
A
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID14007 Rev 4
5/21
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