Thyristors
12 Amp Alternistor (High Communitation) Triacs
Qxx12xHx Series
Description
RoHS
This 12 Amp bidirectional solid state switch series is
designed for AC switching and phase control applications
such as motor speed and temperature modulation controls,
lighting controls, and static switching relays.
Standard alternistor triac components operate with in-phase
signals in Quadrants I or III and ONLY unipolar negative gate
pulses for Quadrant II or III. The alternistor triac will not
operate in Quadrant IV. These are used in circuit applications
requiring a high dv/dt capability.
Agency Approval
Agency
Agency File Number
E71639*
* - L Package Only
Features & Benefits
• RoHS Compliant
• Glass – passivated
junctions
• Voltage capability up to
1000 V
• Surge capability up to
120 A
Value
12
400, 600, 800 or 1000
10 or 50
Unit
A
V
mA
contact bounce that
create voltage transients
• No contacts to wear
out from reaction of
switching events
• Restricted (or limited) RFI
generation, depending
on activation point sine
wave
• Requires only a small
gate activation pulse in
each half-cycle
Main Features
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT (Q1)
• The L-package has
an isolation rating of
2500V
RMS
• Solid-state switching
eliminates arcing or
Applications
Schematic Symbol
MT2
MT1
Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
Typical applications are AC solid-state switches, light
dimmers, power tools, lawn care equipment, home/brown
goods and white goods appliances.
Alternistor Triacs (no snubber required) are used in
applications with extremely inductive loads requiring
highest commutation performance.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
Additional Information
G
Datasheet
Resources
Samples
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Absolute Maximum Ratings — Alternistor
(3 Quadrants)
Symbol
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Parameter
Qxx12LHy
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
Peak gate trigger current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
f = 120 Hz
t
p
=20μs
Qxx12RHy
Qxx12NHy
f = 50 Hz
f = 60 Hz
T
C
= 90°C
T
C
= 105°C
t = 20 ms
t = 16.7 ms
t
p
= 8.3 ms
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
Value
12
110
120
60
70
4
0.5
-40 to 150
-40 to 125
Unit
A
A
A
2
s
A/μs
A
W
°C
°C
Note: xx = voltage/10, y = sensitivity
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Alternistor Triac
(3 Quadrants)
Symbol
I
GT
V
GT
V
GD
I
H
Test Conditions
V
D
= 12V R
L
= 60
Ω
V
D
= 12V R
L
= 60
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 125°C
I
T
= 100mA
400V
dv/dt
V
D
= V
DRM
Gate Open T
J
= 125°C
V
D
= V
DRM
Gate Open T
J
= 100°C
(dv/dt)c
t
gt
(di/dt)c = 6.5 A/ms T
J
= 125°C
I
G
= 2 x I
GT
PW = 15μs I
T
= 17 A(pk)
.0
600V
800V
1000V
MIN.
TYP
.
MIN.
Quadrant
I – II – III
I – II – III
I – II – III
MAX.
MAX.
MIN.
MAX.
Qxx12xH2
10
1.3
0.2
15
300
200
150
150
2
4
Qxx12xH5
50
1.3
0.2
50
750
650
500
300
30
4
V/μs
μs
V/μs
Unit
mA
V
V
mA
Static Characteristics
Symbol
V
TM
I
DRM
I
RRM
I
TM
= 17
.0A t
p
= 380 µs
T
J
= 25°C
V
D
= V
DRM
/ V
RRM
T
J
= 125°C
T
J
= 100°C
400-1000V
400-800V
1000V
MAX.
Test Conditions
MAX.
Value
1.60
10
2
3
Unit
V
μA
mA
Thermal Resistances
Symbol
R
θ(J-C)
R
θ(J-A)
ote: xx = voltage/10, y = sensitivity
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Parameter
Junction to case (AC)
Junction to ambient (AC)
Qxx12RHy
Qxx12NHy
Qxx12LHy
Qxx12RHy
Qxx12LHy
Value
1.2
2.3
45
90
Unit
°C/W
°C/W
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Figure 1: Definition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
MT2 POSITIVE
(Positive Half Cycle)
Figure 2: Normalized DC Gate Trigger Current for
All Quadrants vs. Junction Temperature
4.0
MT2
(
-
)
Ratio of I
GT
/ I
GT
(T
J
= 25 ºC)
+
MT2
3.0
I
GT
GATE
MT1
(+)
I
GT
GATE
MT1
2.0
I
GT
-
(
-
)
REF
MT2
I
GT
GATE
MT1
REF
QII QI
QIII QIV
(+)
REF
MT2
I
GT
GATE
MT1
REF
+
I
GT
1.0
0.0
-65
-40
-15
10
35
60
85
110
MT2 NEGATIVE
(Negative Half Cycle)
-
Junction Temperature (T
J
) - C
Note: Alternistors will not operate in QIV
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
4.0
Figure 4: Normalized DC Gate Trigger Voltage for
All Quadrants vs. Junction Temperature
2.0
3.0
Ratio of V
GT
/ V
GT
(T
J
= 25ºC)
Ratio of I
H
/ I
H
(T
J
= 25ºC)
1.5
2.0
1.0
1.0
0.5
0.0
-65
-40
-15
10
35
60
85
110
0.0
-65
-40
-15
10
35
60
85
110
Junction Temperature (T
J
) - ºC
Junction Temperature (T
J
) - ºC
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
14
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
130
Maximum Allowable Case Temperature
(T
C
) - °C
Average On-State Power Dissipation
[P
D(AV)
] -- Watts
12
10
8
6
4
2
0
0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
120
Qxx12RH5
Qxx12NH5
110
100
Qxx12LH5
90
80
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
70
2
4
6
8
10
12
14
60
0
2
4
6
8
10
12
14
RMS On-State Current [I
T(RMS)
] -- Amps
RMS On-State Current [I
T(RMS)
] - Amps
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Figure 7: Maximum Allowable Ambient Temperature
vs. On-State Current
120
Figure 8: On-State Current vs. On-State Voltage
(Typical)
20
Max Allowable Ambient Temperature
(T
A
) - ºC
110
100
90
80
70
60
50
40
30
20
0.
0.2
0.4
0.6
0.8
1.0
Positive or Negative Instantaneous
On-State Current (I
T
) - AMPS
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
FREE AIR RATING - No HEAT SINK
18
16
14
12
10
8
6
4
2
0
0.7
0.8
0.9
T
C
= 25ºC
1.0
1.1
1.2
1.3
1.4
1.2
1.4
1.6
1.8
2.0
RMS On-State Current [I
T(RMS)
] - AMPS
Positive or Negative Instantaneous On-State Voltage
(V
T
) - Volts
Figure 9: Surge Peak On-State Current vs. Number of Cycles
1000
Peak Surge (Non-Repetitive On-State Current
(I
TSM
) - AMPS
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [I
T(RMS)
: Maximum]
Rated Value at Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
100
10
1
1
10
100
1000
Surge Current Duration - Full Cycles
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (min to max) (t
s
)
Pb – Free assembly
T
P
Temperature
t
P
Ramp-up
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
T
L
T
S(max)
t
L
Preheat
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
25
Time
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
Physical Specifications
Terminal Finish
Body Material
Terminal Material
100% Matte Tin-plated
UL Recognized compound meeting
flammability rating V-0
Copper Alloy
Environmental Specifications
Test
AC Blocking
Temperature Cycling
Temperature/
Humidity
High Temp Storage
Low-Temp Storage
Resistance to
Solder Heat
Solderability
Lead Bend
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell time
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Design Considerations
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
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