VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 40 A
Base
cathode
2
2
3
1
1
Cathode
3
Anode
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified
JEDEC
®
-JESD 47
according
to
Available
TO-247AC modified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-247AC modified (2 pins)
40 A
1000 V, 1200 V
1.4 V
475 A
95 ns
150 °C
Single die
0.5
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-40EPF1... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/μs
20 A, T
J
= 25 °C
Sinusoidal waveform
CHARACTERISTICS
VALUES
1000/1200
40
475
95
1.25
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-40EPF10PbF, VS-40EPF10-M3
VS-40EPF12PbF, VS-40EPF12-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
10
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
40
400
475
800
1131
11 310
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 94103
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
40 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.4
6.82
0.94
0.1
10
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 10 A
pk
25 A/μs
25 °C
VALUES
450
6
1.8
0.5
UNITS
ns
A
μC
dir
dt
Q
rr
I
RM(REC)
I
FM
t
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC modified (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.6
40
0.2
6
0.21
6 (5)
12 (10)
40EPF10
40EPF12
g
oz.
kgf · cm
(Ibf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
Revision: 11-Feb-16
Document Number: 94103
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
www.vishay.com
Vishay Semiconductors
90
150
130
120
110
100
90
80
70
60
0
5
10
15
20
25
30
35
40
45
Ø
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
40EPF.. Series
R
thJC
(DC) = 0.6 °C/W
80
70
60
50
40
DC
180°
120°
90°
60°
30°
30°
60°
90°
120°
180°
RMS limit
30
20
10
0
0
10
20
30
40
50
60
70
40EPF.. Series
T
J
= 150 °C
Ø
Conduction period
Conduction angle
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
450
40EPF.. Series
R
thJC
(DC) = 0.6 °C/W
400
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
Peak Half Sine Wave
Forward Current (A)
350
300
250
200
150
100
40EPF.. Series
Ø
Conduction period
30°
90
80
60°
90°
120°
180°
DC
70
60
0
10
20
30
40
50
60
70
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
70
500
180°
120°
90°
60°
30°
RMS limit
450
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
60
50
40
30
Peak Half Sine Wave
Forward Current (A)
400
350
300
250
200
150
100
0.01
40EPF.. Series
Ø
20
10
0
0
5
10
15
20
25
Conduction angle
40EPF.. Series
T
J
= 150 °C
30
35
40
45
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94103
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
40EPF.. Series
1
0
1
2
3
4
5
6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7
0.6
40EPF.. Series
T
J
= 25 °C
6
5
4
3
I
FM
= 10 A
2
I
FM
= 5 A
1
I
FM
= 1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
I
FM
= 1 A
40EPF.. Series
T
J
= 25 °C
I
FM
= 40 A
0.5
0.4
I
FM
= 40 A
0.3
0.2
0.1
0
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 30 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
I
FM
= 30 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
2.0
40EPF.. Series
T
J
= 150 °C
I
FM
= 60 A
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
20
40EPF.. Series
T
J
= 150 °C
I
FM
= 60 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
1.6
16
I
FM
= 40 A
12
I
FM
= 20 A
8
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
1.2
0.8
0.4
4
0
0
40
80
120
160
200
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 11-Feb-16
Document Number: 94103
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
www.vishay.com
Vishay Semiconductors
50
40EPF.. Series
T
J
= 150 °C
30
25
40EPF.. Series
T
J
= 25 °C
I
FM
= 40 A
I
FM
= 30 A
I
rr
- Typical Reverse
Recovery Current (A)
I
rr
- Typical Reverse
Recovery Current (A)
40
I
FM
= 60 A
I
FM
= 40 A
20
15
10
5
0
0
40
80
120
30
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
20
10
I
FM
= 1 A
0
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
1
Steady state value
(DC operation)
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
40EPF.. Series
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 94103
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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