IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
130
33
59
Single
D
FEATURES
500
0.28
• Low Gate Charge Q
g
results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low t
rr
and Soft Diode Recovery
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
• Uninterruptible Power Supply
• High Speed Power Switching
S
N-Channel MOSFET
G
D
S
• ZVS and High Frequency Circuit
• PWM Inverters
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRFB17N50LPbF
SiHFB17N50L-E3
IRFB17N50L
SiHFB17N50L
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Peak Diode Recovery
Energy
a
T
C
= 25 °C
dV/dt
c
for 10 s
6-32 or M3 screw
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
16
11
64
1.8
390
16
22
220
13
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 3.0 mH, R
g
= 25
,
I
AS
= 16 A (see fig. 12).
c. I
SD
16 A, dI/dt
347 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
0.56
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 9.9 A
b
V
DS
= 50 V, I
D
= 9.9 A
b
500
-
3.0
-
-
-
-
11
-
0.6
-
-
-
-
0.28
-
-
-
5.0
± 100
50
2.0
0.32
-
V
V/°C
V
nA
μA
mA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
DS
= 1.0 V , f = 1.0 MHz
V
DS
= 400 V , f = 1.0 MHz
V
DS
= 0 V to 400 V
c
I
D
= 16 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
-
-
-
-
-
-
-
-
2760
325
37
3690
84
159
-
-
-
21
51
50
28
-
-
-
-
-
-
130
33
59
-
-
-
-
ns
nC
pF
V
DD
= 250 V, I
D
= 16 A,
R
g
= 7.5
,
see fig. 10
b
-
-
-
-
-
-
-
-
170
220
470
810
7.3
16
A
64
1.5
250
330
710
1210
11
V
ns
G
S
T
J
= 25 °C, I
S
= 16 A, V
GS
= 0 V
b
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 16 A, dI/dt = 100 A/μs
b
-
-
-
-
-
-
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
nC
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
www.vishay.com
2
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Top
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100
TJ = 150 °C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
Bottom
10
TJ = 25 °C
1
5.0 V
0.1
20
μs
PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
4.0
5.0
6.0
7.0
VDS = 50 V
20
μs
PULSE WIDTH
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance (Normalized)
100
VGS
Top
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom 5.0 V
3.0
ID = 16 A
2.5
ID, Drain-to-Source Current (A)
10
2.0
5.0 V
1.5
1
1.0
20
μs
PULSE WIDTH
TJ = 125 °C
0.1
0.1
1
10
100
0.5
VGS = 10 V
- 60 - 40 - 20 0
20 40
60 80 100 120 140 160
0.0
TJ, Junction Temperature
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
1 000 000
VGS = 0 V,
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
f = 1 MHz
Shorted
ISD, Reverse Drain Current (A)
100
TJ = 150 °C
10 000
C, Capacitance (pF)
10
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
TJ = 25 °C
1
0.1
0.2
VGS = 0 V
0.6
0.9
1.3
1.6
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 16 A
16
VDS = 400 V
VDS = 250 V
VDS = 100 V
1000
OPERATING IN THIS AREA LIMITED
BY RDS(on)
100
ID, Drain Current (A)
10
μs
10
100
μs
1 ms
1
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
100
1000
10000
VGS, Gate-to-Source Voltage (V)
12
8
4
0
0
30
60
90
QG, Total Gate Charge (nC)
120
150
0.1
10
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
R
D
20
V
GS
R
G
16
ID, Drain Current (A)
10 V
12
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
V
DS
D.U.T.
+
-
V
DD
Fig. 10a - Switching Time Test Circuit
8
4
V
DS
90 %
0
25
50
75
100
125
150
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
D = 0.50
Thermal Response (ZthJC)
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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