IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
17
4.3
8.5
Single
D
FEATURES
500
3.0
• Low gate Charge Q
g
results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
• Fully
characterized
capacitance
avalanche voltage and current
• Effective C
oss
specified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
and
Available
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
S
N-Channel MOSFET
G
S
G
D S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR420A-GE3
IRFR420APbF
DPAK (TO-252)
SiHFR420ATR-GE3
a
IRFR420ATRPbF
a
DPAK (TO-252)
SiHFR420ATRL-GE3
IRFR420ATRLPbF
IPAK (TO-251)
SiHFU420A-GE3
IRFU420APbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
T
C
= 25 °C
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
temperature)
d
for 10 s
b
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
500
± 30
3.3
2.1
10
0.67
140
2.5
5.0
83
3.4
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 45 mH, R
g
= 25
,
I
AS
= 2.5 A (see fig. 12).
c. I
SD
2.5 A, dI/dt
270 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
S16-1522-Rev. D, 08-Aug-16
Document Number: 91274
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.5
°C/W
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 1.5 A
b
V
DS
= 50 V, I
D
= 1.5 A
MIN.
500
-
2.0
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.60
-
-
-
-
-
-
340
53
2.7
490
15
28
-
-
-
8.1
12
16
13
MAX.
-
-
4.5
± 100
25
250
3.0
-
-
-
-
-
-
-
17
4.3
8.5
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400
V
GS
= 10 V
V
c
pF
pF
I
D
= 2.5 A, V
DS
= 400 V,
see fig. 6 and 13
b
nC
V
DD
= 250 V, I
D
= 2.5 A,
R
g
= 21
,
R
D
= 97
,
see fig. 10
b
-
-
-
ns
-
-
-
-
-
-
-
-
330
760
3.3
A
10
1.6
500
1140
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 2.5 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 2.5 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
S16-1522-Rev. D, 08-Aug-16
Document Number: 91274
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
Vishay Siliconix
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
1
1
T
J
= 25
°
C
0.1
0.1
4.5V
0.01
0.1
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
4.0
V DS = 50V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
D
= 2.5A
2.5
2.0
1
1.5
4.5V
1.0
0.5
0.1
1
10
20μs PULSE WIDTH
T
J
= 150
°
C
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-1522-Rev. D, 08-Aug-16
Document Number: 91274
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
10
10 000
1000
Coss = C + C
ds gd
I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1 MHz
Ciss = C + Cgd, C
shorted
gs
ds
Crss = C
gd
T
J
= 150
°
C
C, Capacitance(pF)
C
iss
100
1
C
oss
T
J
= 25
°
C
10
C
rss
1
1
10
100
1000
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
V
DS
, Drain-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
I
D
= 2.5A
V
GS
, Gate-to-Source Voltage (V)
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
15
10
10us
10
100us
1
1ms
5
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
8
12
16
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
10000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
S16-1522-Rev. D, 08-Aug-16
Document Number: 91274
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
V
DS
V
GS
R
D
5.0
4.0
D.U.T.
+
- V
DD
R
g
I
D
, Drain Current (A)
3.0
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
2.0
Fig. 10a - Switching Time Test Circuit
1.0
V
DS
90 %
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( ° C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
0.02
0.01
SINGLE
PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
t
1
t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
15 V
t
p
V
DS
L
Driver
R
g
20 V
t
p
D.U.T
I
AS
0.01
Ω
+
A
- V
DD
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
S16-1522-Rev. D, 08-Aug-16
Document Number: 91274
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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