STF24N60M2, STFI24N60M2,
STFW24N60M2
N-channel 600 V, 0.168
Ω
typ., 18 A MDmesh II Plus™ low Q
g
Power MOSFETs in TO-220FP, I
2
PAKFP and TO-3PF packages
Datasheet
−
production data
Features
Order codes
STF24N60M2
1
2
3
1 2
3
V
DS
@ T
Jmax
R
DS(on)
max
0.19
Ω
I
D
STFI24N60M2
STFW24N60M2
650 V
18 A
TO-220FP
I
2
PAKFP
(TO-281)
•
Extremely low gate charge
•
Lower R
DS(on)
x area vs previous generation
•
Low gate input resistance
•
100% avalanche tested
1
3
2
1
•
Zener-protected
TO-3PF
Applications
•
Switching applications
•
LLC converters, resonant converters
Figure 1. Internal schematic diagram
D(2)
Description
G(1)
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
S(3)
AM01476v1
Table 1. Device summary
Order codes
STF24N60M2
STFI24N60M2
STFW24N60M2
24N60M2
Marking
Package
TO-220FP
I
2
PAKFP (TO-281)
TO-3PF
Tube
Packaging
April 2014
This is information on a product in full production.
DocID024026 Rev 6
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18
Contents
STF24N60M2, STFI24N60M2, STFW24N60M2
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1
4.2
4.3
TO-220FP, STF24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
I2PAKFP, STFI24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
TO-3PF, STFW24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/18
DocID024026 Rev 6
STF24N60M2, STFI24N60M2, STFW24N60M2
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
TO-220FP,
TO-3PF
I
2
PAKFP
± 25
18
(1)
12
(1)
72
(1)
30
15
50
2500
3500
48
Unit
V
GS
I
D
I
D
I
DM (2)
P
TOT
dv/dt
(3)
dv/dt
(4)
V
ISO
T
stg
T
j
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; T
C
= 25 °C)
Storage temperature
V
A
A
A
W
V/ns
V/ns
V
- 55 to 150
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I
SD
≤
18 A, di/dt
≤
400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V.
4. V
DS
≤
480 V
°C
Table 3. Thermal data
Value
Symbol
Parameter
TO-220FP,
TO-3PF
I
2
PAKFP
4.2
62.5
2.6
50
Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche current, repetitive or not repetitive (pulse width
limited by T
jmax
)
Single pulse avalanche energy (starting T
j
=25°C, I
D
= I
AR
;
V
DD
=50)
Value
3.5
Unit
A
180
mJ
DocID024026 Rev 6
3/18
Electrical characteristics
STF24N60M2, STFI24N60M2, STFW24N60M2
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V
(BR)DSS
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current
Gate-body leakage
current
Test conditions
V
GS
= 0, I
D
= 1 mA
V
GS
= 0, V
DS
= 600 V
I
DSS
V
GS
= 0,
V
DS
= 600 V, T
C
=125 °C
V
DS
= 0, V
GS
= ± 25 V
2
3
0.168
Min.
600
1
100
Typ.
Max.
Unit
V
μA
μA
I
GSS
V
GS(th)
R
DS(on)
±10
4
0.19
μA
V
Ω
Gate threshold voltage V
DS
= V
GS
, I
D
= 250
μA
Static drain-source on-
V
GS
= 10 V, I
D
= 9 A
resistance
Table 6. Dynamic
Symbol
C
iss
C
oss
C
rss
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
Test conditions
Min.
-
-
-
Typ.
1060
55
2.2
Max.
-
-
-
Unit
pF
pF
pF
C
oss eq.(1)
R
G
Q
g
Q
gs
Q
gd
V
DS
= 0 to 480 V, V
GS
= 0
f = 1 MHz, I
D
=0
V
DD
= 480 V, I
D
= 18 A,
V
GS
= 10 V
(see
Figure 16)
-
258
-
pF
Ω
nC
nC
nC
-
-
-
-
7
29
6
12
-
-
-
-
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/18
DocID024026 Rev 6
STF24N60M2, STFI24N60M2, STFW24N60M2
Electrical characteristics
Table 7. Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 300 V, I
D
= 9 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 16
and
21)
Test conditions
Min.
-
-
-
-
Typ.
14
9
60
15
Max. Unit
-
-
-
-
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
I
SD(1)
Parameter
Source-drain current
Test conditions
Min.
-
-
I
SD
= 18 A, V
GS
= 0
I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 18)
-
-
-
-
I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 18)
-
-
-
332
4
24
450
5.5
25
Typ.
Max. Unit
18
72
1.6
A
A
V
ns
μC
A
ns
μC
A
I
SDM (1),(2)
Source-drain current (pulsed)
V
SD (3)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. The value is rated according to R
thj-case
and limited by package.
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300
μs,
duty cycle 1.5%
DocID024026 Rev 6
5/18
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