Schottky Barrier Rectifier
Comchip
SMD Diode Specialist
SR320-HF Thru. SR3200-HF
Forward current: 3.0A
Reverse voltage: 20 to 200V
RoHS Device
Halogen Free
Features
-Axial lead type devices for through hole design.
-Low power loss, high efficiency.
-High current capability, Low forward voltage drop.
-High surge capability.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
1.0(25.4) min.
DO-27
0.052(1.30)
0.048(1.20)
DIA.
0.375(9.50)
0.285(7.20)
0.220(5.60)
0.197(5.00)
DIA.
Mechanical Data
-Case: Molded plastic, DO-201AD/DO-27
-Epoxy: UL94V-0 rate flame retardant.
-Lead: Axial lead, solderable per MIL-STD-202,
Method 208 guranteed.
-Polarity: color band denoted cathode end.
-Weight: 1.10 gram
(approx.)
.
1.0(25.4) min.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum forward voltage
@3A , T
A
=25°C
Operating junction temperature range
Symbol
SR320
-HF
V
RRM
V
RMS
V
DC
V
F
T
J
SR340
-HF
40
28
40
0.50
SR360
-HF
60
42
60
0.70
SR3100 SR3150 SR3200
Unit
-HF
-HF
-HF
100
70
100
0.81
150
105
150
0.87
200
140
200
0.90
V
V
V
V
°C
20
14
20
0.45
-50 ~ +150
-50 ~ +175
Parameter
Forward rectified current
Forward surge current
Reverse current
see Fig.1
Conditions
Symbol
I
O
I
FSM
I
R
I
R
R
θJA
C
J
T
STG
MIN.
TYP.
MAX.
3.0
70
0.5
20
Unit
A
A
mA
mA
°C/W
pF
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
V
R
=V
RRM
T
A
=25°C
V
R
=V
RRM
T
A
=100°C
Thermal resistance
Diode junction capacitance
Storage temperature
Junction to ambient
f=1MH
Z
and applied 4V DC reverse Voltage
55
250
-55
+175
°C
REV:A
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB040
Page 1
Schottky Barrier Rectifier
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (SR320-HF Thru. SR3200-HF)
Fig.1 - Typical Forward Current
Derating Curve
3.5
Fig.2 - Typical Forward Characteristics
100
Average Forward Current, (A)
3.0
SR 3
Instantaneous Forward Current, (A)
2.5
2.0
1.5
1.0
0.5
0
10
SR
3
-H
20
F
R3
~S
40
F
-H
SR
36
HF
0-
32
SR
F~
00
SR3100-H
F
-H
F
SR 3
2 0-H
F~
150
-H F
~ SR
320
0-H
F
1.0
3
SR
15
0 -H
1
SR3
0 0 -H
F
0.1
TJ=25°C
Pulse Width 300us
1% Duty Cycle
0
25
50
75
100
125
150
175
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Ambient Temperature, (°C)
Forward Voltage, (V)
Fig.3 - Maximum Non-repetitive
Forward Surge Current
100
Fig.4 - Typical Junction Capacitance
700
600
500
400
300
200
100
Peak Forward Surge Current, (A)
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
80
60
40
20
0
1
10
100
Junction Capacitance, (pF)
0
0.01
0.1
1
10
100
Number of Cycles at 60Hz
Reverse Voltage, (V)
Fig.5 - Typical Reverse Characteristics
100
Reverse Leakage Current, (mA)
10
1
T
J
=125°C
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage, (%)
REV:A
QW-JB040
Page 2
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