TO
-22
0A
B
BUK95180-100A
N-channel TrenchMOS logic level FET
Rev. 02 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C
I
D
= 5.5 A; V
sup
≤
25 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C
Min
-
-
-
-
-
-
Typ
-
-
-
152
165
-
Max Unit
100
11
54
173
180
1.5
V
A
W
mΩ
mΩ
mJ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
NXP Semiconductors
BUK95180-100A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK95180-100A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; T
mb
= 25 °C
I
D
= 5.5 A; V
sup
≤
25 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C
T
mb
= 100 °C
T
mb
= 25 °C; pulsed
T
mb
= 25 °C
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
Max
100
100
15
11
7.7
44
54
175
175
11
44
1.5
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
BUK95180-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2011
2 of 13
NXP Semiconductors
BUK95180-100A
N-channel TrenchMOS logic level FET
100
I
D
(%)
80
003aaf331
100
I
D
(%)
80
003aaf332
60
60
40
40
20
20
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
003aaf333
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
003aaf346
10
2
I
DM
(A)
10
R
DS(on)
= V
DS
/ I
D
100
W
DSS
(%)
80
60
D.C.
1
20
10
−
1
1
10
40
10
2
V
DS
(V)
10
3
0
20
60
100
140
T
mb
(°C)
180
T
mb
= 25 °C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4.
I
D
= 75 A
Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
003aaf347
10
2
l
AV
T
j
prior to avalanche = 150
°C
10
25
°C
1
10
−3
10
−2
10
−1
1
t
AV
(ms)
10
unclamped inductive load
Fig 5.
BUK95180-100A
Single-shot avalanche rating; avalanche current as a function of avalanche period
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2011
3 of 13
NXP Semiconductors
BUK95180-100A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
in free air
Conditions
Min
-
-
Typ
-
60
Max
2.8
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
003aaf334
δ
= 0.5
10
−1
0.2
0.1
0.05
0.02
P
δ
=
t
p
T
10
−2
0
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK95180-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2011
4 of 13
NXP Semiconductors
BUK95180-100A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source breakdown
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 5 V; I
D
= 5 A; T
j
= 175 °C
V
GS
= 4.5 V; I
D
= 5 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
measured from drain lead 6 mm from
package to centre of die ; T
j
= 25 °C
measured from contact screw on tab
to centre of die ; T
j
= 25 °C
L
S
internal source inductance
measured from source lead to source
bond pad ; T
j
= 25 °C
I
S
= 5 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 11 A; V
GS
= 0 V; T
j
= 25 °C
t
rr
Q
r
reverse recovery time
recovered charge
I
S
= 11 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
464
60
37
9
112
18
25
4.5
3.5
7.5
619
72
50
20
157
27
38
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
100
89
-
1
0.5
-
-
-
-
-
-
-
-
Typ
-
-
-
1.5
-
-
0.05
2
2
-
170
152
165
Max
-
-
2.3
2
-
500
10
100
100
450
200
173
180
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
Source-drain diode
V
SD
source-drain voltage
-
-
-
-
0.85
1.1
49
0.13
1.2
-
-
-
V
V
ns
µC
BUK95180-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2011
5 of 13
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