VS-GB150TS60NPbF
www.vishay.com
Vishay Semiconductors
INT-A-PAK “Half-Bridge”
(Ultrafast Speed IGBT), 138 A
FEATURES
• Gen 5 non punch through (NPT) technology
• Ultrafast: optimized for hard switching speed
• Low V
CE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive V
CE(on)
temperature coefficient
• HEXFRED
®
antiparallel diode with ultrasoft reverse
recovery characteristics
INT-A-PAK
• Industry standard package
• Al
2
O
3
DBC
• UL approved file E78996
• Designed for industrial level
600 V
138 A
2.64 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
PRIMARY CHARACTERISTICS
V
CES
I
C
DC
V
CE(on)
at 150 A, 25 °C
Speed
Package
Circuit configuration
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation
Isolation voltage
Operating junction temperature range
Storage temperature range
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
V
GE
P
D
V
ISOL
T
J
T
Stg
T
C
= 25 °C
T
C
= 80 °C
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
138
93
300
300
178
121
± 20
500
280
2500
-40 to +150
-40 to +150
V
W
V
°C
A
UNITS
V
Revision: 22-Sep-17
Document Number: 94502
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB150TS60NPbF
www.vishay.com
Vishay Semiconductors
SYMBOL
V
BR(CES)
TEST CONDITIONS
V
GE
= 0 V, I
C
= 500 μA
V
GE
= 15 V, I
C
= 100 A
V
GE
= 15 V, I
C
= 150 A
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 150 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 500 μA
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
I
C
= 100 A
I
C
= 150 A
I
C
= 100 A, T
J
= 125 °C
I
C
= 150 A, T
J
= 125 °C
V
GE
= ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
-
-
-
-
TYP.
-
2.2
2.64
2.68
3.25
4.2
0.01
7.5
1.39
1.52
1.31
1.49
-
MAX.
-
2.7
3
3.11
3.79
6
0.2
15
1.78
1.91
1.72
2.05
± 200
nA
V
mA
V
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
V
CE(on)
Gate threshold voltage
Collector to emitter leakage current
V
GE(th)
I
CES
Diode forward voltage drop
V
FM
Gate to emitter leakage current
I
GES
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
SYMBOL
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
RBSOA
SCSOA
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
T
J
= 150 °C, I
C
= 300 A,
R
g
= 10
V
GE
= 15 V to 0
T
J
= 150 °C, V
CC
= 400 V, V
P
= 600 V,
R
g
= 10
V
GE
= 15 V to 0
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
CC
= 400 V, T
J
= 25 °C
10
-
-
-
-
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
CC
= 400 V, T
J
= 125 °C
-
-
I
C
= 150 A, V
CC
= 360 V, V
GE
= 15 V,
R
g
= 10
L = 200 μH, T
J
= 125 °C
TEST CONDITIONS
I
C
= 150 A, V
CC
= 360 V, V
GE
= 15 V,
R
g
= 10
L = 200 μH, T
J
= 25 °C
MIN.
-
-
-
-
-
-
-
-
-
-
TYP.
2.0
3.9
5.9
2.42
4.2
6.62
390
100
402
80
Fullsquare
-
226
17
1900
290
25
3600
-
260
20
2600
330
30
5000
ns
A
nC
ns
A
nC
MAX.
-
-
-
-
-
-
-
-
-
-
ns
mJ
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction and storage temperature range
Junction-to-case per leg
Case to sink per module
Mounting torque
Weight
case to heatsink
case to terminal 1, 2, 3
IGBT
Diode
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
MIN.
-40
-
-
-
-
-
-
TYP.
-
0.17
0.19
0.1
-
-
185
MAX.
150
0.25
0.32
-
4
3
-
Nm
g
°C/W
UNITS
°C
Revision: 22-Sep-17
Document Number: 94502
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB150TS60NPbF
www.vishay.com
Vishay Semiconductors
4.5
200
V
CE
, Collector -to-Emitter Voltage (V)
150
Vge = 18V
Vge = 15V
Vge = 12V
4
Ic = 200A
3.5
Ic = 150A
3
I
cE
(A)
Vge = 9V
100
2.5
Ic = 75A
50
2
0
0
1
2
3
4
1.5
0
30
60
90
120
150
V
CE
(V)
T
J
, Junction Temperature (°C)
Fig. 1 - Typical IGBT Output Characteristics
T
J
= 25 °C, t
p
= 500 μs
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
V
GE
= 15 V, 500 μs pulse width
200
200
150
Vge = 18V
Vge = 15V
Vge = 12V
150
I
cE
(A)
100
Vge = 9V
I
F
(A)
100
50
50
Tj = 125°C
Tj = 25°C
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
V
CE
(V)
V
F
(V)
Fig. 2 - Typical IGBT Output Characteristics
T
J
= 125 °C, t
p
= 500 μs
200
180
Fig. 5 - Diode Forward Characteristics, t
p
= 500 μs
160
140
T
C
, Case Temperature (°C)
160
140
120
100
80
60
40
20
0
I
cE
(A)
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
DC
Tj = 125°C
Tj = 25°C
0
40
80
120
160
V
GE
(V)
Maximum DC Collector Current (A)
Fig. 3 - Typical Transfer Characteristics
V
CE
= 20 V, t
p
= 500 μs
Fig. 6 - Maximum Collector Current vs.
Case Temperature
Revision: 22-Sep-17
Document Number: 94502
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB150TS60NPbF
www.vishay.com
Vishay Semiconductors
10000
4.5
4.0
3.5
3.0
Energy (mJ)
Eoff
Energy Time (ns)
1000
td(off)
td(on)
tr
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
Eon
100
tf
10
0
10
20
30
40
50
I
C
(A)
R
G
(Ω)
Fig. 7 - Typical Energy Loss vs. I
C
T
J
= 125 °C, L = 200 μH, V
CC
= 360 V,
R
g
= 10
,
V
GE
= 15 V
1000
Fig. 10 - Typical Switching Time vs. R
g
,
T
J
= 125 °C, L = 200 μH, V
CC
= 360 V,
I
CE
= 150 A, V
GE
= 15 V
100
td(off)
Switching Time (ns)
90
80
70
10 ohm
td(on)
I
RR
(A)
tf
100
60
50
40
27 ohm
tr
47 ohm
30
10
0
40
80
120
160
20
40
60
80
100
120
140
160
I
C
(A)
I
F
(A)
Fig. 8 - Typical Switching Time vs. I
C
T
J
= 125 °C, L = 200 μH, V
CC
= 360 V,
R
g
= 10
,
V
GE
= 15 V
9.0
8.0
7.0
Fig. 11 - Typical Diode I
rr
vs. I
F
T
J
= 125 °C
100
80
Energy (mJ)
I
RR
(A)
40
50
6.0
Eoff
5.0
4.0
3.0
2.0
0
10
20
30
60
Eon
40
20
0
10
20
30
40
50
R
g
(Ω)
R
G
(Ω)
Fig. 9 - Typical Energy Loss vs. R
g
T
J
= 125 °C, L = 200 μH, V
CC
= 360 V,
I
CE
= 150 A, V
GE
= 15 V
Fig. 12 - Typical Diode I
rr
vs. R
g
T
J
= 125 °C, I
F
= 150 A
Revision: 22-Sep-17
Document Number: 94502
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB150TS60NPbF
www.vishay.com
Vishay Semiconductors
10
90
80
Total Switching Losses (mJ)
Ic = 150A
Ic = 100A
Ic = 75A
I
RR
(A)
70
60
50
200
400
600
800
1000
1200
1400
1
0
25
50
75
100
125
dI
F
/ dt (A/μs)
T
J
- Junction Temperature (°C)
Fig. 13 - Typical Diode I
rr
vs. dI
F
/dt
T
J
= 125 °C, V
CC
= 360 V, I
F
= 150 A, V
GE
= 15 V
Fig. 15 - Typical Switching Losses vs. Junction Temperature;
L = 200 μH, R
g
= 10
,
V
CC
= 360 V, V
GE
= 15 V
17
16
8
Total Switching Losses (mJ)
15
14
13
12
11
10
9
8
7
6
0
10
20
30
40
50
Total Switching Losses (mJ)
7
6
5
4
3
2
1
0
0
40
80
120
160
R
G
(Ω)
I
C
(A)
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
T
J
= 125 °C, L = 200 μH, R
g
= 10
,
V
CC
= 360 V, V
GE
= 15 V
Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current;
T
J
= 125 °C, R
g1
= 10
,
R
g2
= 0
,
V
CC
= 360 V, V
GE
= 15 V
1
Thermal response (Z
thJC
)
D = 0.5
0.1
D = 0.2
D = 0.1
D = 0.05
0.01
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
0.001
1E-05
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
1E-02
1E-01
1E+00
1E+01
1E-04
1E-03
t
1
, Rectangular Pulse Duration (sec)
Fig. 17 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Revision: 22-Sep-17
Document Number: 94502
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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