1.5KA6.8 thru 1.5KA47A
Vishay General Semiconductor
Automotive Transient Voltage Suppressors
High Temperature Stability & High Reliability Conditions
FEATURES
• Patented PAR
®
construction
• Available in Unidirectional polarity only
• 1500 W peak pulse power capability with a
10/1000 µs waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical I
D
less than 1.0 µA above 15 V rating
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
Telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
*
ted
n
ate
P
Patent #'s
4,980,315
*
5,166,769
5,278,094
Case Style 1.5KA
MAJOR RATINGS AND CHARACTERISTICS
V
(BR)
P
PPM
P
D
I
FSM
T
j
max.
6.8 V to 47 V
1500 W
5.0 W
200 A
185 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current at T
A
= 25 °C with a 10/1000 µs waveform
(1)
(Fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 100 A
(2)
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
Minimum 1500
see next table
5.0
200
3.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Document Number 88300
17-Jan-06
www.vishay.com
1
1.5KA6.8 thru 1.5KA47A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
DEVICE TYPE
V
(BR) (1)
AT I
T
(V)
MIN
1.5KA6.8
1.5KA6.8A
1.5KA7.5
1.5KA7.5A
1.5KA8.2
1.5KA8.2A
1.5KA9.1
1.5KA9.1A
1.5KA10
1.5KA10A
1.5KA11
1.5KA11A
1.5KA12
1.5KA12A
1.5KA13
1.5KA13A
1.5KA15
1.5KA15A
1.5KA16
1.5KA16A
1.5KA18
1.5KA18A
1.5KA20
1.5KA20A
1.5KA22
1.5KA22A
1.5KA24
1.5KA24A
1.5KA27
1.5KA27A
1.5KA30
1.5KA30A
1.5KA33
1.5KA33A
1.5KA36
1.5KA36A
1.5KA39
1.5KA39A
1.5KA43
1.5KA43A
1.5KA47
1.5KA47A
Note:
(1) V
(BR)
measured after I
T
applied for 300 µs = square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
MAX
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
MAXIMUM
STAND-OFF
TEST
REVERSE
CURRENT VOLTAGE
LEAKAGE
V
WM
I
T
AT V
WM
(V)
(mA)
I
D
(µA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
1000
1000
500
500
200
200
50
50
20
20
5.0
5.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
T
J
= 150 °C
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
10000
10000
5000
5000
2000
2000
500
500
200
200
50
50
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
20
20
20
20
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
MAXIMUM
TEMP.
COEFFICIENT
OF V
(BR)
(%/°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.076
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
www.vishay.com
2
Document Number 88300
17-Jan-06
1.5KA6.8 thru 1.5KA47A
Vishay General Semiconductor
ORDERING INFORMATION
PREFERRED P/N
1.5KA6.8A-E3/54
UNIT WEIGHT (g)
0.916
PREFERRED PACKAGE CODE
54
BASE QUANTITY
1400
DELIVERY MODE
13" Diameter Paper Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
T
J
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
tr = 10
µsec.
Peak
Value
I
PPM
100
Half
Value
- IPP
2
I
PPM
50
10/1000
µsec. Waveform
as defined
by
R.E.A.
1.0
td
0
0
1.0
2.0
3.0
4.0
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
td - Pulse
Width
(sec.)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
20000
10000
T
J
= 25
°C
f = 1.0 MHz
Vsig
= 50 mVp-p
Measured at
Zero Bias
75
50
C
J
- Junction Capacitance (pF)
1000
Measured at
Stand-Of
Voltage, V
WM
25
0
100
0
25
50
75
100
125
150
175
200
1.0
10
100
T
J
- Initial Temperature (°C)
V
(BR)
- Breakdown
Voltage
(V)
Figure 2. Pulse Power or Current versus Initial Junction
Temperature
Figure 4. Typical Junction Capacitance Unidirectional
Document Number 88300
17-Jan-06
www.vishay.com
3
1.5KA6.8 thru 1.5KA47A
Vishay General Semiconductor
I
FSM
- Peak Forward Surge Current (A)
5.0
60 Hz Resistive
or Inductive Load
3.75
200
T
L
= 75 °C
8.3
ms Single Half Sine-Wave
100
P
D
, Power Dissipation (W)
2.5
L = 0.375" (9.5 mm)
Lead Lengths
1.25
0
0
25
50
75
100
125
150
175
200
10
1
10
100
T
L
- Lead Temperature (°C)
Number
of Cycles at 60H
Z
Figure 5. Power Derating Curve
Figure 6. Maximum Non-Repetitive/Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS IN INCHES (MILLIMETERS)
Case Style 1.5KA
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
www.vishay.com
4
Document Number 88300
17-Jan-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
