CXG1173UR
High Power SPDT Switch with Logic Control
Description
The CXG1173UR can be used in wireless com-
munication systems, for example, CDMA handsets,
W-CDMA handsets, 2.4GHz WLAN.
The CXG1173UR has on-chip logic for operation
with 1 CMOS control inputs.
The Sony J-FET process is used for low insertion
loss and on-chip logic circuit.
Features
•
Low insertion loss: 0.3dB@900MHz, 0.45dB@1.95GHz
•
1 CMOS compatible control line
•
Small package size: 12-pin UQFN
Applications
•
Antenna switch for cellular handsets
W-CDMA, CDMA
•
Antenna switch for cellular handsets
2.4GHz WLAN IEEE 802.11b, 802.11g
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings
(Ta = 25°C)
•
Bias voltage
V
DD
7
V
•
Control voltage
Vctl
5
V
•
Operation temperature
Topr
–35 to +85 °C
•
Storage temperature
Tstg –65 to +150 °C
12 pin UQFN (Plastic)
GaAs MMIC's are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E03Y12-PS
CXG1173UR
Block Diagram and Recommended Circuit
C
RF
GND
GND
RF1
6
GND
7
5
4
GND
3
F1
C
RF
RF2
8
F3
GND
9
10
V
DD
F2
RF3 C
RF
2
F4
GND
1
11
GND
12
CTL
Cbypass (100pF)
Cbypass
(100pF)
Rctl (1kΩ)
When using this IC, the following external components should be used:
Rctl: This resistor is used to improve ESD performance. 1kΩ is recommended.
C
RF
: This capacitor is used for RF De-coupling and must be used all application.
Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.
Truth Table
CTL
H
L
ON State
RF1 – RF2
RF1 – RF3
F1
ON
OFF
F2
ON
F3
ON
F4
ON
OFF
OFF OFF
–2–
CXG1173UR
DC Bias Condition
Item
Vctl (H)
Vctl (L)
V
DD
Min.
2.0
0
2.5
Typ.
3.0
—
3.0
(Ta = 25°C)
Max.
3.6
0.4
3.6
Unit
V
V
V
Electrical Characteristics
Item
Insertion loss
Isolation
VSWR
Switching speed
1dB compression input power
Input IP3
Symbol
IL
ISO.
VSWR
TSW
P1dB
IIP3
ACLR1
ACLR
ACLR2
ACLR3
ACLR4
2fo
Harmonics
3fo
2fo
3fo
Bias current
Control current
I
DD
Ictl
∗
1,
∗
2
∗
3
±5MHz,
∗
1
±10MHz,
∗
1
±900kHz,
∗
2
±1.98MHz,
∗
2
∗
1
∗
1
∗
2
∗
2
V
DD
= 3.0V
Vctl (H) = 3.0V
34
55
63
–60
–65
–60
–65
–75
–75
–75
–75
65
15
Condition
900MHz
1950MHz
900MHz
1950MHz
50Ω
24
18
Min.
Typ.
0.30
0.45
30
25
1.2
2
(Ta = 25°C)
Max.
0.50
0.65
Unit
dB
dB
dB
dB
1.5
5
—
µs
dBm
dBm
–50
–55
–50
–55
–55
–60
–55
–60
100
30
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
µA
µA
∗
1
Pin = 25dBm, 0/3.0V control, V
DD
= 3.0V, 1920 to 1980MHz
∗
2
Pin = 25dBm, 0/3.0V control, V
DD
= 3.0V, 900MHz
∗
3
Pin = 25dBm (900MHz) + 25dBm (901MHz), 0/3.0V control, V
DD
= 3.0V
–3–
CXG1173UR
Pin Description
Pin No.
2
5
8
10
12
Symbol
RF3
RF1
RF2
V
DD
CTL
Description
RF input/output. Connect capacitor (recommended value: 100pF) in use
RF input/output. Connect capacitor (recommended value: 100pF) in use
RF input/output. Connect capacitor (recommended value: 100pF) in use
DC power supply
Logic control
GND
1, 3, 4, 6,
GND
7, 9, 11
–4–
模拟与混合信号
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