RN4988
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4988
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Includeing two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Unit: mm
Equivalent Circuit and Bias Resister Values
R1: 22kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
7
100
Unit
V
V
V
mA
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1A
Q2 Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−7
−100
Unit
V
V
V
mA
1
2001-06-07
RN4988
Q1, Q2 Common Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
*
: Total rating
Marking
Equivalent Circuit
(Top View)
2
2001-06-07
RN4988
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 0.2V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1 MHz
Min
―
―
0.078
80
―
1.0
0.6
―
―
Typ.
―
―
―
―
0.1
―
―
250
3
Max
100
500
0.145
―
0.3
2.6
1.16
―
6
Unit
nA
mA
―
V
V
V
MHz
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circui
t
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−7V,
I
C
= 0
V
CE
=
−5V,
I
C
=
−10mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−0.2V,
I
C
=
−5mA
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0
Min
―
―
−0.078
80
―
−1.0
−0.6
―
―
Typ.
―
―
―
―
−0.1
―
―
200
3
Max
−100
−500
−0.145
―
−0.3
−2.6
−1.16
―
6
Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
nA
mA
―
V
V
V
MHz
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test
Circuit
―
―
Test Condition
―
―
Min
15.4
0.421
Typ.
22
0.468
Max
28.6
0.515
Unit
kΩ
―
3
2001-06-07
微控制器 MCU
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