Si7840DP
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
18
15
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
D
Optimized for “High-Side” Synchronous
Rectifier Operation
PowerPAK SO-8
D
6.15 mm
S
1
2
3
S
S
5.15 mm
G
4
G
D
8
7
6
5
D
D
D
S
N-Channel MOSFET
Bottom View
Ordering Information: Si7840DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
A
= 25_C
T
A
= 70_C
Conduction)
a
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"20
18
Steady State
Unit
V
11
8
40
A
1.6
40
80
mJ
1.9
1.2
-55 to 150
W
_C
I
D
I
DM
I
S
I
AS
E
AS
14
4.1
5.0
P
D
T
J
, T
stg
3.2
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71624
S-31728—Rev. D, 18-Aug-03
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
20
52
2.1
Maximum
25
65
2.6
Unit
_C/W
C/W
1
Si7840DP
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
NO TAG
Drain-Source On-State Resistance
NO TAG
Forward Transconductance
NO TAG
Diode Forward Voltage
NO TAG
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 18 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 18 A
I
S
= 4.1 A, V
GS
= 0 V
30
0.0077
0.0115
40
0.75
1.2
0.0095
0.014
S
V
1.0
"100
1
5
V
nA
mA
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
NO TAG
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 4.1 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
0.2
V
DS
= 15 V, V
GS
= 5.0 V, I
D
= 18 A
15.5
3.8
6
0.8
17
14
39
19
50
1.2
26
21
60
30
80
ns
W
23
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 10 thru 4 V
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
32
40
Transfer Characteristics
24
3V
24
16
16
T
C
= 125_C
8
25_C
-55_C
8
0
0
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
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Document Number: 71624
S-31728—Rev. D, 18-Aug-03
Si7840DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020
2500
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.016
C - Capacitance (pF)
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.008
2000
C
iss
1500
1000
C
oss
0.004
500
C
rss
0.000
0
8
16
24
32
40
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 18 A
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 18 A
r
DS(on)
- On-Resistance (
W)
(Normalized)
12
18
24
30
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
6
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.05
40
0.04
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
I
S
- Source Current (A)
10
T
J
= 150_C
I
D
= 18 A
0.03
0.02
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71624
S-31728—Rev. D, 18-Aug-03
www.vishay.com
3
Si7840DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
-0.0
Power (W)
-0.2
-0.4
-0.6
40
-0.8
-1.0
-50
0
-25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
120
I
D
= 250
mA
160
V
GS(th)
Variance (V)
200
Single Pulse Power, Juncion-to-Ambient
80
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
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Document Number: 71624
S-31728—Rev. D, 18-Aug-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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