BC846BDW1, BC847BDW1,
BC848CDW1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
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•
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
(4)
(3)
SOT−363/SC−88
CASE 419B
STYLE 1
(2)
(1)
Q
1
Q
2
(5)
(6)
MARKING DIAGRAM
6
1x MG
G
1
1x
x
M
G
= Specific Device Code
= B, F, G, L
= Date Code
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Range
1. FR−5 = 1.0 x 0.75 x 0.062 in
Symbol
P
D
Max
380
250
3.0
R
qJA
T
J
, T
stg
328
−55 to +150
°C
Unit
mW
mW
mW/°C
°C/W
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
August, 2016 − Rev. 11
Publication Order Number:
BC846BDW1T1/D
BC846BDW1, BC847BDW1, BC848CDW1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mA)
BC846
BC847
BC848
Collector −Emitter Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
BC846
BC847
BC848
Collector −Base Breakdown Voltage
(I
C
= 10
mA)
BC846
BC847
BC848
Emitter −Base Breakdown Voltage
(I
E
= 1.0
mA)
BC846
BC847
BC848
Collector Cutoff Current
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
BC846B, BC847B
BC847C, BC848C
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846B, BC847B
BC847C, BC848C
Collector −Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
f
T
100
C
obo
−
NF
−
−
10
−
4.5
dB
−
−
pF
MHz
h
FE
−
−
200
420
V
CE(sat)
−
−
V
BE(sat)
−
−
V
BE(on)
580
−
660
−
700
770
0.7
0.9
−
−
mV
−
−
0.25
0.6
V
150
270
290
520
−
−
450
800
V
−
V
(BR)CEO
65
45
30
V
(BR)CES
80
50
30
V
(BR)CBO
80
50
30
V
(BR)EBO
6.0
6.0
5.0
I
CBO
−
−
−
−
15
5.0
nA
mA
−
−
−
−
−
−
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC846BDW1
600
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
500
150°C
400
300
200
100
0
0.001
25°C
500
150°C
400
300
200
100
0
0.001
25°C
600
V
CE
= 10 V
−55°C
−55°C
0.01
0.1
1
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain at V
CE
= 5 V
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
Figure 2. DC Current Gain at V
CE
= 10 V
0.25
I
C
/I
B
= 10
0.20
0.3
I
C
/I
B
= 20
0.25
0.2
0.15
0.1
0.05
0
0.0001
25°C
150°C
0.15
150°C
0.10
25°C
0.05
−55°C
−55°C
0.00
0.0001
0.001
0.01
0.1
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. V
CE(sat)
at I
C
/I
B
= 10
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
Figure 4. V
CE(sat)
at I
C
/I
B
= 20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
0.1
150°C
I
C
/I
B
= 10
−55°C
25°C
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
0.1
150°C
−55°C
25°C
I
C
/I
B
= 20
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 5. V
BE(sat)
at I
C
/I
B
= 10
Figure 6. V
BE(sat)
at I
C
/I
B
= 20
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BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC846BDW1
1.20
V
BE(on)
, BASE−EMITTER VOLTAGE
(V)
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
150°C
25°C
−55°C
V
CE
= 5 V
1000
f
T
, CURRENT−GAIN − BANDWIDTH
PRODUCT
V
CE
= 10 V
T
A
= 25°C
100
0.1
10
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
BE(on)
at V
CE
= 5 V
Figure 8. Current − Gain − Bandwidth Product
10
T
A
= 25°C
C, CAPACITANCE (pF)
C
ib
V
CE
, COLLECTOR−EMITTER VOLT-
AGE (V)
2
T
A
= 25°C
I
C
=
100 mA
1.6
I
C
=
10 mA
I
C
=
20 mA
I
C
=
50 mA
1.2
C
ob
0.8
0.4
1
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
0
0.01
0.1
1
10
100
I
B
, BASE CURRENT (mA)
Figure 9. Capacitances
Figure 10. Collector Saturation Region
q
VB
, TEMPERATURE COEFFICIENT
(mV/°C)
−0.2
−0.6
−1
−1.4
−1.8
−2.2
−2.6
−3
0.1
V
CE
= 5 V
q
VB
, for V
BE
−55°C to 150°C
1
10
I
B
, BASE CURRENT (mA)
100
Figure 11. Base−Emitter Temperature Coefficient
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BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC847BDW1
600
500
400
300
200
100
0
0.0001
25°C
150°C
h
FE
, DC CURRENT GAIN
600
500
400
25°C
300
200
100
0
0.0001
−55°C
150°C
V
CE
= 5 V
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
−55°C
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 12. DC Current Gain at V
CE
= 5 V
0.25
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
0.30
Figure 13. DC Current Gain at V
CE
= 10 V
I
C
/I
B
= 10
I
C
/I
B
= 20
0.25
0.20
0.15
25°C
0.10
0.05
0.00
0.0001
150°C
0.20
0.15
0.10
25°C
0.05
−55°C
0.00
0.0001
0.001
0.01
I
C
, COLLECTOR CURRENT (A)
0.1
150°C
−55°C
0.001
0.01
I
C
, COLLECTOR CURRENT (A)
0.1
Figure 14. V
CE
at I
C
/I
B
= 10
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
Figure 15. V
CE
at I
C
/I
B
= 20
1.20
1.00
I
C
/I
B
= 10
1.20
I
C
/I
B
= 20
1.00
0.80
0.60
0.40
0.20
0.00
0.0001
150°C
−55°C
25°C
−55°C
0.80
25°C
0.60
150°C
0.40
0.20
0.00
0.0001
0.001
0.01
0.1
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 16. V
BE(sat)
at I
C
/I
B
= 10
Figure 17. V
BE(sat)
at I
C
/I
B
= 20
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