15ETH06S/15ETH06-1
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
TM
15ETH06S
15ETH06-1
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
Base
cathode
2
• 175 °C operating junction temperature
2
• Single die center tap module
• Designed and qualified for industrial level
1
N/C
3
Anode
1
N/C
3
Anode
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
22 ns
15 A
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 140 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
15
120
30
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 µA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.8
1.3
0.2
30
20
8.0
MAX.
-
2.2
1.6
50
500
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93005
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
15ETH06S/15ETH06-1
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/µs
V
R
= 390 V
I
F
= 15 A
dI
F
/dt = 200 A/µs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
22
28
29
75
3.5
7
57
300
51
20
580
MAX.
30
35
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
µC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.0
-
0.5
2.0
0.07
-
MAX.
175
1.3
70
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
15ETH06S
15ETH06-1
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93005
Revision: 05-Sep-08
15ETH06S/15ETH06-1
Hyperfast Rectifier,
15 A FRED Pt
TM
100
1000
Vishay High Power Products
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
0
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93005
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
15ETH06S/15ETH06-1
Vishay High Power Products
180
Hyperfast Rectifier,
15 A FRED Pt
TM
100
I
F
= 30 A
I
F
= 15 A
80
Allowable Case Temperature (°C)
170
160
150
140
130
120
110
0
5
10
15
20
25
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
0
100
DC
t
rr
(ns)
60
40
20
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery vs. dI
F
/dt
35
1000
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 30 A
I
F
= 15 A
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Average Power Loss (W)
30
RMS Limit
25
20
15
10
5
0
0
5
10
15
20
25
DC
800
Q
rr
(nC)
600
400
200
0
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93005
Revision: 05-Sep-08
15ETH06S/15ETH06-1
Hyperfast Rectifier,
15 A FRED Pt
TM
V
R
= 200
V
Vishay High Power Products
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93005
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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