TSA884
PNP Silicon Planar High Voltage Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-500V
-500V
-150mA
-0.5V @ I
C
/ I
B
= -50mA / -10mA
Features
●
●
Low Saturation Voltages
Excellent gain characteristics specified up to -50mA
Ordering Information
Part No.
TSA884CX RFG
Package
SOT-23
Packing
3Kpcs / 7” Reel
Structure
●
●
Epitaxial Planar Type
PNP Silicon Transistor
Note:
“G” denotes for Halogen Free
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
TOT
T
J
T
STG
Limit
-500
-500
-5
-150
-500
0.3
+150
- 55 to +150
Unit
V
V
V
mA
W
°C
°C
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Electrical Specifications
(Ta = 25°C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn On Time
Turn Off Time
Conditions
I
C
= -100uA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100uA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= -20mA, I
B
= -2mA
I
C
= -50mA, I
B
= -10mA
I
C
= -50mA, I
B
= -10mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
V
CE
=10V, I
C
=-100mA
V
CB
= 20V, f=1MHz
V
CE
= -100V, I
C
= -50mA
I
B1
=-5mA, I
B2
=-10mA
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
1
V
CE(SAT)
2
V
BE(SAT)
V
BE(ON)
h
FE
1
h
FE
2
h
FE
3
f
T
Cob
Ton
Toff
Min
-500
-500
-5
--
--
--
--
--
150
80
--
--
--
--
--
Typ
--
--
--
--
--
--
--
--
--
--
--
15
50
--
110
1500
Max
--
--
--
-100
-100
-0.2
-0.5
-0.9
-0.9
300
300
--
--
8
--
--
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
nS
nS
Document Number: DS_P0000262
1
Version: E15
TSA884
PNP Silicon Planar High Voltage Transistor
Electrical Characteristics Curve
(Ta = 25°C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. V
CE(SAT)
v.s. V
BE(SAT
Figure 4. Power Derating
Document Number: DS_P0000262
2
Version: E15
TSA884
PNP Silicon Planar High Voltage Transistor
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
A8
Y
M
= Device Code
= Year Code
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
= Lot Code
L
Document Number: DS_P0000262
3
Version: E15
TSA884
PNP Silicon Planar High Voltage Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
Document Number: DS_P0000262
4
Version: E15
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