VS-STPS20L15GPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
FEATURES
Base
cathode
2
• 125 °C T
J
operation (V
R
< 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
TO-263AB (D
2
PAK)
N/C
1
3
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Diode variation
20 A
15 V
0.33 V
600 mA at 100 °C
125 °C
10 mJ
TO-263AB (D
2
PAK)
Single die
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for
ultralow forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
19 A
pk
, T
J
= 125 °C (typical)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
20
15
700
0.25
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
TEST CONDITIONS
T
J
= 100 °C
VS-STPS20L15GPbF
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 85 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
700
330
10
2
mJ
A
A
UNITS
Revision: 29-Jul-14
Document Number: 94326
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-STPS20L15GPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
19 A
Forward voltage drop
See fig. 1
V
FM (1)
40 A
19 A
40 A
Reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F (TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 100 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
-
8
10 000
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
-
-
0.25
0.37
-
-
0.182
7.6
2000
-
MAX.
0.41
0.52
0.33
0.50
10
600
mA
V
mW
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style D
2
PAK
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
R
thJA
DC operation
See fig. 4
Mounting surface, smooth and greased (for TO-220)
DC operation (for D
2
PAK)
TEST CONDITIONS
VALUES
-55 to +125
-55 to +150
1.5
0.50
40
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
STPS20L15G
Revision: 29-Jul-14
Document Number: 94326
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-STPS20L15GPbF
www.vishay.com
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (mA)
T
J
= 100 °C
100
I
F
- Instantaneous
Forward Current (A)
100
T
J
= 75 °C
10
T
J
= 50 °C
10
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
1
T
J
= 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
3
6
9
12
15
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
100
0
5
10
15
20
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 29-Jul-14
Document Number: 94326
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-STPS20L15GPbF
www.vishay.com
100
Vishay Semiconductors
14
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
Allowable Case Temperature (°C)
Average Power Loss (W)
95
90
85
12
10
8
6
4
Square wave (D = 0.50)
80
75
DC
2
0
See note (1)
70
0
4
8
12
16
20
24
0
5
10
15
20
25
30
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 29-Jul-14
Document Number: 94326
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-STPS20L15GPbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
STPS
20
L
15
G
TRL PbF
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
2
3
4
5
6
7
8
Vishay
Semiconductors
product
Essential part number
Current rating (20 = 20 A)
Low voltage
Voltage rating (15 = 15 V)
G
= D
2
PAK package
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
8
-
PbF = lead (Pb)-free (for D
2
PAK tube)
P = lead (Pb)-free (for D
2
PAK TRR and TRL)
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-STPS20L15GPbF
VS-STPS20L15GTRLP
VS-STPS20L15GTRRP
QUANTITY PER T/R
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Revision: 29-Jul-14
Document Number: 94326
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
