* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
www.vishay.com
1
Symbol
R
thJA
R
thJC
Limit
40
0.5
Unit
°C/W
SUP57N20-33
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
c
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 160 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
V
DS
= 15 V, I
D
= 30 A
Min
200
2
Typ
Max
Unit
4
± 100
1
50
250
V
nA
µA
A
120
0.027
0.033
0.069
0.093
25
5100
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
480
210
90
130
pF
V
DS
= 100 V, V
GS
= 10 V, I
D
= 85 A
23
34
24
35
330
70
300
nC
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DD
= 100 V, R
L
= 1.5
Ω
I
D
≅
65 A, V
GEN
= 10 V, R
G
= 2.5
Ω
220
45
200
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
65
140
I
F
= 65 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/µs
1.0
130
8
0.52
1.5
200
12
1.2
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
EtherCAT（Ethernet for Control Automation Technology）是一种基于以太网的开发构架的实时工业现场总线通讯协议，EtherCAT是最快的工业以太网技术之一，同时它提供纳秒级精确同步。相对于设置了相同循环时间的其他总线系统，EtherCAT系统结构通常能减少25%-30%的CPU负载，EtherCAT的出现为系统的实时性能和拓扑的灵活性树立了新的标准。...[详细]
AI分布式渲染架构提升手机渲染能力，游戏性能测试实时可查帧生成指标 中国上海，2025年8月20日——专业的图像和显示处理方案提供商 逐点半导体今日宣布，新发布的真我P4 5G、真我P4 Pro 5G智能手机搭载逐点半导体X7 Gen 2视觉处理器 。该处理器通过集成的分布式渲染解决方案，可降低GPU算力负担，大幅提升手机渲染能力。这也是海外中端市场同级产品中，首个集成专业视觉处理器的智能手...[详细]
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
